The role of structural defects on the transport properties of a few-walled carbon nanotube networks

2011 ◽  
Vol 98 (19) ◽  
pp. 192105 ◽  
Author(s):  
R. Kamalakannan ◽  
K. Ganesan ◽  
S. Ilango ◽  
N. Thirumurugan ◽  
V. N. Singh ◽  
...  
2013 ◽  
Vol 117 (25) ◽  
pp. 13324-13330 ◽  
Author(s):  
Andrej Znidarsic ◽  
Antti Kaskela ◽  
Patrik Laiho ◽  
Miran Gaberscek ◽  
Yutaka Ohno ◽  
...  

2013 ◽  
Vol 543 ◽  
pp. 356-359 ◽  
Author(s):  
David Petras ◽  
Petr Slobodian ◽  
Robert Olejnik ◽  
Pavel Riha

The conductance properties of multi-walled carbon nanotube mats and their polystyrene composite were examined to investigate the mechanism of conduction and the specific role of the supporting polymer. By measuring the temperature dependence of the conductance, it was found that the conduction mechanism in carbon nanotube mat follows the series heterogeneous model when the conductance is described as the sum of metallic and barrier portions of the conduction path. This mechanism is affected by the polymeric portion of the composite, since the temperature dependence of the composite conductance is decreased.


2016 ◽  
Vol 843 ◽  
pp. 132-138 ◽  
Author(s):  
Sergey Anatolevich Sozykin ◽  
Valeriy Petrovich Beskachko ◽  
G.P. Vyatkin

The adsorption of lithium atoms on carbon nanotubes with double vacancy structural defects (2V-defect) is being studied with first-principle modeling. The structure of defective tubes in ground state is considered, the role of effects related to finite sizes of a model is evaluated. It is demonstrated that the location of a carbon 8-ring formed by 2V-defect above the center is the most preferable for a lithium atom.


2021 ◽  
Vol 118 (24) ◽  
pp. 242102
Author(s):  
A. Rehman ◽  
A. Krajewska ◽  
B. Stonio ◽  
K. Pavlov ◽  
G. Cywinski ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aziz Ahmed ◽  
Seungwoo Han

AbstractN-type bismuth telluride (Bi2Te3) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K2 for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.


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