Dependence of the interface sharpness of a Ge single quantum well on molecular‐beam‐epitaxial growth conditions

1994 ◽  
Vol 76 (12) ◽  
pp. 8042-8047 ◽  
Author(s):  
W. Kissinger ◽  
H. J. Osten ◽  
G. Lippert ◽  
B. Dietrich ◽  
E. Bugiel
Keyword(s):  
Quantum Well ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

scholarly journals Molecular Beam Epitaxial Growth of the InSb/CdTe Single Quantum Well Structures on GaAs (100) Substrates.

Shinku ◽  
2000 ◽  
Vol 43 (3) ◽  
pp. 333-336 ◽  
Author(s):  
Kazuto KOIKE ◽  
Kuniaki SUEYOSHI ◽  
Ken-ichi TANAKA ◽  
Shuwei LI ◽  
Katsuhiro FUJII ◽  
...  
Keyword(s):  
Quantum Well ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Indium adatom migration during molecular beam epitaxial growth of strained InGaAs/GaAs single quantum wells

1989 ◽  
Vol 55 (25) ◽  
pp. 2611-2613 ◽  
Author(s):  
D. J. Arent ◽  
S. Nilsson ◽  
Y. D. Galeuchet ◽  
H. P. Meier ◽  
W. Walter
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Single Quantum ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth
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