Epitaxial iridium silicide formation during deposition of Ir on Si(100) at high temperature under ultrahigh vacuum

1994 ◽  
Vol 76 (3) ◽  
pp. 1937-1939 ◽  
Author(s):  
C. K. Chung ◽  
J. Hwang
1998 ◽  
Vol 525 ◽  
Author(s):  
L. P. Ren ◽  
P. Liu ◽  
G. Z. Pan ◽  
Jason C. S. Woo

ABSTRACTA novel low temperature self-aligned Ti silicidation with Ge+ pre-amorphization implant (PAI) is presented. Compared to conventional high temperature PAM silicidation, the advantages of Ti salicidation at temperatures below the recrystallization of a pre-amorphized layer are: (1) C49 TiSi2 silicide formation occurs only in the pre-amorphized layer so that the silicide depth can be well controlled, forming a very sharp interface between the silicide and the Si substrate; (2) Ti just reacts with the amorphous layer, avoiding the so-called bridging issue in which the silicide grows laterally over the isolation or spacer; (3) the effects of metal thickness and substrate doping on silicide formation are suppressed.


1993 ◽  
Vol 47 (2) ◽  
pp. 1024-1028 ◽  
Author(s):  
V. G. Stankevitch ◽  
N. Yu. Svechnikov ◽  
K. V. Kaznacheev ◽  
M. Kamada ◽  
S. Tanaka ◽  
...  

2011 ◽  
Vol 29 (3) ◽  
pp. 031602 ◽  
Author(s):  
Mark S. Williamsen ◽  
Shishir K. Ray ◽  
Ying Zou ◽  
John A. Dudek ◽  
Somaditya Sen ◽  
...  

1992 ◽  
Vol 13 (1) ◽  
pp. 199-210 ◽  
Author(s):  
P. Neuhaus ◽  
I. Egry ◽  
G. Loh�fer

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