Monte Carlo study of electron transport in strained silicon‐carbon alloy

1994 ◽  
Vol 76 (3) ◽  
pp. 1924-1926 ◽  
Author(s):  
M. Ershov ◽  
V. Ryzhii
VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 213-216
Author(s):  
Mahbub Rashed ◽  
W.-K. Shih ◽  
S. Jallepalli ◽  
R. Zaman ◽  
T. J. T. Kwan ◽  
...  

Electron transport in pseudomorphically-grown silicon on relaxed (001) Si1-xGex is investigated using a Monte Carlo (MC) simulation tool. The study includes both electron transport in bulk materials and in nMOS structures. The bulk MC simulator is based on a multiband analytical model, “fitted bands”, representing the features of a realistic energy bandstructure. The investigation includes the study of low- and high-field electron transport characteristics at 77 K and 300 K. Single particle MC simulations are performed for a strained silicon nMOS structure at room temperature. Both calculations show saturation of mobility enhancement in strained silicon beyond germanium mole fraction of 0.2.


1988 ◽  
Vol 53 (22) ◽  
pp. 2205-2207 ◽  
Author(s):  
K. Sadra ◽  
C. M. Maziar ◽  
B. G. Streetman ◽  
D. S. Tang

Author(s):  
D. Emfietzoglou ◽  
G. Papamichael ◽  
I. Androulidakis ◽  
K. Karava ◽  
K. Kostarelos ◽  
...  

2000 ◽  
Vol 88 (8) ◽  
pp. 4717 ◽  
Author(s):  
Xin Wang ◽  
D. L. Kencke ◽  
K. C. Liu ◽  
A. F. Tasch ◽  
L. F. Register ◽  
...  

2010 ◽  
Vol 375 (2-3) ◽  
pp. 503-507 ◽  
Author(s):  
Christopher B. George ◽  
Igal Szleifer ◽  
Mark A. Ratner

1990 ◽  
Vol 68 (2) ◽  
pp. 621-626 ◽  
Author(s):  
Hideaki Taniyama ◽  
Masaaki Tomizawa ◽  
Tomofumi Furuta ◽  
Akira Yoshii

Sign in / Sign up

Export Citation Format

Share Document