Pulsed laser etching of silicon: Dopant profile modification and dopant desorption induced by surface melting

1994 ◽  
Vol 76 (5) ◽  
pp. 3081-3087 ◽  
Author(s):  
A. Desmur ◽  
B. Bourguignon ◽  
J. Boulmer ◽  
J.‐B. Ozenne ◽  
J.‐P. Budin ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Surface Melting ◽  
Laser Etching ◽  
Profile Modification ◽  
Dopant Profile

Pulsed-Laser Annealing of Ion-Implanted GaAs: Theory and Exeriment

1980 ◽  
Vol 1 ◽  
Author(s):  
R. F. Wood ◽  
Douglas H. Lowndes ◽  
W. H. Christie
Keyword(s):  
Laser Irradiation ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Surface Melting ◽  
Pulsed Laser Annealing ◽  
Dopant Profile ◽  
Theory And Experiment ◽  
Good Agreement ◽  
Pulsed Laser Irradiation ◽  
Catastrophic Damage

ABSTRACTIt is shown that, in the pulsed-laser irradiation of crystalline or lightly damaged GaAs, good agreement is obtained between measured and calculated thresholds for melting, for catastrophic damage due to vaporization, and for the duration of surface melting at various energy densities. Good agreement between theory and experiment is also obtained for dopant profile spreading during pulsed-laser annealing.

Modeling of pulsed laser etching of high‐Tcsuperconductors

1990 ◽  
Vol 68 (10) ◽  
pp. 5273-5277 ◽  
Author(s):  
A. N. Jette ◽  
W. J. Green
Keyword(s):  
Pulsed Laser ◽  
Laser Etching

Parameter optimization in femtosecond pulsed laser etching of fluorine-doped tin oxide films

2019 ◽  
Vol 116 ◽  
pp. 162-170 ◽  
Author(s):  
Yi-lun Wang ◽  
Bao-jia Li ◽  
Shuang-shuang Li ◽  
Huang Li ◽  
Li-jing Huang ◽  
...  
Keyword(s):  
Parameter Optimization ◽  
Tin Oxide ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Laser Etching ◽  
Tin Oxide Films ◽  
Femtosecond Pulsed Laser

scholarly journals Fabrication of nano-sized grains by pulsed laser surface melting

2010 ◽  
Vol 43 (9) ◽  
pp. 095402 ◽  
Author(s):  
Chengtao Wang ◽  
Hong Zhou ◽  
Pengyu lin ◽  
Na Sun ◽  
Qingchen Guo ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Surface Melting ◽  
Laser Surface ◽  
Laser Surface Melting

Measurement Of Precipitate Nucleation Times In Molten Metals By Pulsed Surface Melting

1983 ◽  
Vol 28 ◽  
Author(s):  
D.M. Follstaedt ◽  
S.T. Picraux ◽  
P.S. Peercy ◽  
J.A. Knapp ◽  
W.R. Wampler
Keyword(s):  
Pulsed Laser ◽  
Surface Melting ◽  
Complex Structures ◽  
Molten Metals ◽  
Simple Cubic ◽  
Beam Surface ◽  
Thermal Histories ◽  
Time Required ◽  
Precipitate Nucleation ◽  
Melt Duration

ABSTRACTThe short melt duration resulting from pulsed laser and electron beam surface melting of ion-implanted metals has been used to measure precipitate nucleation times of compounds within the melt. We have examined the phases present in several alloy systems with TEM and used calculated thermal histories to place limits on the time required for nucleation of the following compounds: AlSb (5–25 ns), Al3Ni (≳ 750 ns)Al3Ni2 (≳ 950 ns) and AlNi (< 1000 ns), all in molten Al, and TiC (≲ 100 ns) in molten Fe. The compounds observed after our rapid solidification have relatively simple, cubic structures and melt congruently, while those predicted but not observed have more complex structures and decompose peritectically.

Efficient fabrication of SERS plasmonics pesticides sensors by pulsed laser etching

2021 ◽  
Author(s):  
Walid K. Hamoudi ◽  
Alwan M. Alwan ◽  
Doaa Sulaiman
Keyword(s):  
Pulsed Laser ◽  
Laser Etching
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