Modeling of pulsed laser etching of high‐Tcsuperconductors

1990 ◽  
Vol 68 (10) ◽  
pp. 5273-5277 ◽  
Author(s):  
A. N. Jette ◽  
W. J. Green
Keyword(s):  
Pulsed Laser ◽  
Laser Etching

Parameter optimization in femtosecond pulsed laser etching of fluorine-doped tin oxide films

2019 ◽  
Vol 116 ◽  
pp. 162-170 ◽  
Author(s):  
Yi-lun Wang ◽  
Bao-jia Li ◽  
Shuang-shuang Li ◽  
Huang Li ◽  
Li-jing Huang ◽  
...  
Keyword(s):  
Parameter Optimization ◽  
Tin Oxide ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Laser Etching ◽  
Tin Oxide Films ◽  
Femtosecond Pulsed Laser

Efficient fabrication of SERS plasmonics pesticides sensors by pulsed laser etching

2021 ◽  
Author(s):  
Walid K. Hamoudi ◽  
Alwan M. Alwan ◽  
Doaa Sulaiman
Keyword(s):  
Pulsed Laser ◽  
Laser Etching

Pulsed Laser Etching of GaN and AIN Films

1997 ◽  
Vol 482 ◽  
Author(s):  
H. Chen ◽  
R. D. Vispute ◽  
V. Talyansky ◽  
R. Enck ◽  
S. B. Ogale ◽  
...  
Keyword(s):  
Energy Density ◽  
Laser Energy ◽  
Etching Rate ◽  
Pulsed Laser ◽  
Dry Etching ◽  
Laser Energy Density ◽  
Etch Depth ◽  
Layer By Layer ◽  
Laser Etching ◽  
Wide Range

AbstractDue to limited success in wet etching of GaN and AIN, dry etching techniques have become more relevant for the processing of the GaN films. Here we demonstrate the results of an alternative dry etching process, namely, pulsed laser etching, for GaN and AIN. In this method, a KrF pulsed excimer laser (λ=248 nm, τ=30 ns) was used to etch epitaxial GaN and AIN films. The dependence of the etching characteristics on the laser energy density and the number of pulses has been studied. The etch depth showed a linear dependence on the number of pulses over a wide range of laser energy densities. The threshold intensity for GaN etching was determined to be 0.33 J/cm2. The etching rate was found to be a strong function of laser energy density. Above the threshold, the etch rate was found to be 300–1400 Å per pulse leading to etching rates of 0.1–1μm/sec depending upon the laser energy density and the pulse repetition rate. It is shown that the etching mechanism is based on laser induced absorption, decomposition and layer by layer removal of the GaN.

Pulsed laser etching of highTcsuperconducting films

1987 ◽  
Vol 51 (14) ◽  
pp. 1112-1114 ◽  
Author(s):  
Arun Inam ◽  
X. D. Wu ◽  
T. Venkatesan ◽  
S. B. Ogale ◽  
C. C. Chang ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Laser Etching

Pulsed laser etching of silicon: Dopant profile modification and dopant desorption induced by surface melting

1994 ◽  
Vol 76 (5) ◽  
pp. 3081-3087 ◽  
Author(s):  
A. Desmur ◽  
B. Bourguignon ◽  
J. Boulmer ◽  
J.‐B. Ozenne ◽  
J.‐P. Budin ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Surface Melting ◽  
Laser Etching ◽  
Profile Modification ◽  
Dopant Profile

scholarly journals LRTM effect and electronic crystal imaging on silicon surface

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Zhong-Mei Huang ◽  
Shi-Rong Liu ◽  
Hong-yan Peng ◽  
Xin Li ◽  
Wei-Qi Huang
Keyword(s):  
Photonic Crystals ◽  
Silicon Surface ◽  
Pulsed Laser ◽  
High Order ◽  
Laser Etching ◽  
Plasmonic Structures ◽  
Nanosecond Pulsed Laser ◽  
Theory Result ◽  
Electronic Crystal ◽  
Nonlinear Imaging

AbstractSome interesting phenomena have been observed in the laser reflecting Talbot magnification (LRTM) effect discovered at first, in which the high-order nonlinear imaging and the plasmonic structures imaging occur. The LRTM effect images were obtained on the 1D and 2D photonic crystals fabricated by using nanosecond pulsed laser etching on silicon surface, where the high-order nonlinear imaging on the 1D and 2D photonic crystals was observed interestingly. The theory result is consistent with the experimental one, which exhibits that the suitable wave-front shape of injection beam selected in optical route can effectively enlarge the magnification rate and elevate the resolution of the Talbot image. Especially the periodic plasmonic structures on silicon surface have been observed in the LRTM effect images, which have a good application in the online detection of pulsed laser etching process. The temporary reflecting Talbot images exhibit that the electrons following with photonic frequency float on plasma surface to form electronic crystal observed on silicon at first, which is similar with the Wigner crystal structure.

Laser etching of indium tin oxide thin films by ultra-short pulsed laser

2003 ◽  
Author(s):  
Ryuzo Tanaka ◽  
T. Takaoka ◽  
H. Mizukami ◽  
T. Arai ◽  
Y. Iwai
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Pulsed Laser ◽  
Oxide Thin Films ◽  
Laser Etching

Gaussian Pulsed Laser Etching of CVD Diamonds

2020 ◽  
Vol 47 (12) ◽  
pp. 1202007
Author(s):  
陈妮 Chen Ni ◽  
闫博 Yan Bo ◽  
李振军 Li Zhenjun ◽  
李亮 Li Liang ◽  
何宁 He Ning
Keyword(s):  
Pulsed Laser ◽  
Laser Etching
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