Kinetics of nickel silicide growth in silicon nanowires: From linear to square root growth

2011 ◽  
Vol 109 (9) ◽  
pp. 094303 ◽  
Author(s):  
Y. E. Yaish ◽  
A. Katsman ◽  
G. M. Cohen ◽  
M. Beregovsky
Keyword(s):  
Root Growth ◽  
Silicon Nanowires ◽  
Nickel Silicide ◽  
Square Root ◽  
Silicide Growth ◽  
Kinetics Of

From Contact to Diffusion Controlled Growth of Nickel Silicides in Silicon Nanowires

2012 ◽  
Vol 323-325 ◽  
pp. 427-432 ◽  
Author(s):  
A. Katsman ◽  
Y. Yaish ◽  
M. Beregovsky
Keyword(s):  
Silicon Nanowires ◽  
Nitrogen Atmosphere ◽  
Nickel Silicide ◽  
Critical Parameters ◽  
Geometrical Parameters ◽  
Diffusion Type ◽  
Semiconducting Nanowires ◽  
Nickel Silicides ◽  
Different Temperatures ◽  
Silicide Growth

Semiconducting nanowires (NW) are implemented as the active channel of field effect transistor (FET) with linear and Schottky barrier source and drain contacts. Thermally activated axial intrusion of nickel silicides into the silicon NW from pre-patterned Ni reservoirs is used in the formation of nickel silicide/silicon contacts in SiNW FETs. In the present work, the kinetics of nickel silicide axial growth in SiNWs was analyzed in the framework of the model taking into account the balance between transition of Ni atoms from the Ni reservoir to the NW surface, diffusion transport of these Ni atoms from the contact area to the interfaces between different silicides and nickel silicide/Si interface, and corresponding reactions of Ni atoms with Si and the nickel silicides formed. Simultaneous growth of mono-and nickel rich silicide was described for different kinetic and geometrical parameters of the system. Critical parameters for transition from the linear to the parabolic dependences were introduced. The model was applied to the experimental results on nickel silicide growth in SiNWs of 25÷50 nm in diameters in a temperature range of 300÷440C°. The silicide intrusions were obtained by annealing of SiNWs with pre-patterned Ni electrodes in a rapid thermal annealing machine under nitrogen atmosphere for different temperatures and times up to 120 s. In most cases the intrusions consisted of two nickel silicides, Ni-rich and mono-silicide NiSi, as was confirmed by TEM and measuring the electrical resistance of the SiNW after full silicidation. The total intrusion length, L, and particular silicide lengths, showed various time dependences, from a linear (with low growth rates (1÷4nm/s)) to a square root, diffusion-type dependence (with higher rates (10÷15 nm/s)). This behavior is well described by the model developed.

The kinetics of abscisic acid action on root growth and gravitropism

Planta ◽  
1983 ◽  
Vol 157 (2) ◽  
pp. 150-157 ◽  
Author(s):  
Timothy J. Mulkey ◽  
Michael L. Evans ◽  
Konrad M. Kuzmanoff
Keyword(s):  
Abscisic Acid ◽  
Root Growth ◽  
Kinetics Of

Silicon Transport in Lateral Silicide Growth of CrSi2

1986 ◽  
Vol 71 ◽  
Author(s):  
L. R. Zheng ◽  
L. R. Doolittle ◽  
J. W. Mayer
Keyword(s):  
Growth Kinetics ◽  
Lateral Diffusion ◽  
Diffusion Couples ◽  
Si Substrates ◽  
Impurity Segregation ◽  
Silicide Growth ◽  
Device Geometry ◽  
Metal Layers ◽  
Kinetics Of ◽  
Influence Of Impurities

AbstractSilicide formation and growth are studied in three geometries: conventional planar thin films, lateral diffusion couples formed by depositing metal layers on Si islands, and device geometry couples formed by depositing metal on oxide-patterned Si substrates. The influence of impurities is studied by implanting arsenic and krypton into conventional and device geometry structures.Here we present growth kinetics of CrSi2 where the presence of impurities has a strong influence. Si transport dominates in disilicide formation and leads to erosion of contacts around the periphery of oxide windows. Implantation of arsenic suppresses CrSi 2 formation; with krypton implantation, the growth kinetics shifts from linear to square-root in character. We attribute these results to impurity segregation at interfaces or grain boundaries.

Effect of Ligand Density Gradient on the Adhesion Kinetics of Biological Membranes

2007 ◽  
Vol 1063 ◽  
Author(s):  
Alireza Sarvestani ◽  
Esmaiel Jabbari
Keyword(s):  
Elastic Membrane ◽  
Square Root ◽  
Front Edge ◽  
Ligand Density ◽  
Surface Gradient ◽  
Diffusion Controlled ◽  
Adhesion Zone ◽  
Edge Displacement ◽  
Kinetics Of ◽  
Effect Of Surface

ABSTRACTAn analytical model is developed for the effect of surface gradient in ligand density on the adhesion kinetics of a curved elastic membrane with mobile receptors. The displacement and speed of spreading at the edge of the adhesion zone as well as the density profile of receptors along the membrane are predicted as a function of time. According to results, in the diffusion-controlled regime, the front edge displacement of adhesion zone and the rate of membrane spreading decreased with increasing ligand density in a certain direction. Furthermore, the displacement of the edge of the adhesion zone did not scale with the square root of time, as observed on substrates with uniform ligand density.

Exploring the kinetics of ordered silicon nanowires with the formation of nanogaps using metal-assisted chemical etching

2014 ◽  
Vol 16 (48) ◽  
pp. 26711-26714 ◽  
Author(s):  
Chia-Yun Chen ◽  
Yu-Rui Liu
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Metal Assisted Chemical Etching ◽  
Kinetics Of

We explored the kinetics of ordered silicon nanowires with the formation of nanogaps prepared using metal-assisted chemical etching.

Orientation dependence of nickel silicide formation in contacts to silicon nanowires

2009 ◽  
Vol 105 (9) ◽  
pp. 094309 ◽  
Author(s):  
N. S. Dellas ◽  
B. Z. Liu ◽  
S. M. Eichfeld ◽  
C. M. Eichfeld ◽  
T. S. Mayer ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Orientation Dependence ◽  
Nickel Silicide ◽  
Silicide Formation

Phase Formation and Kinetic Processes in Silicide Growth.

1983 ◽  
Vol 25 ◽  
Author(s):  
G. Ottaviani
Keyword(s):  
Boundary Conditions ◽  
Phase Formation ◽  
Growth Kinetics ◽  
Metal Layer ◽  
Silicide Phase ◽  
Reaction Products ◽  
Silicon Structures ◽  
Silicide Growth ◽  
Kinetic Processes ◽  
Kinetics Of

ABSTRACTTwenty years of research have now been devoted to investigating reaction products obtained by annealing metal-layer/silicon structures. A wide variety of cases have been analyzsed and a considerable amount of data has been produced. Despite the vast amount of information available, several aspects concerning phase formation and kinetic processes are not yet well established. The purpose of this paper is to investigate the mechanisms of phase formation and to show the importance of kinetic factors in the appearance of various compounds. Results will be shown for a single metal layer deposited on silicon, for bilayers. and for alloys. Depending upon the starting structure, metal-rich or silicon-rich silicides can be formed. Moreover, by modifying the boundary conditions, it is possible to change the growth kinetics of the silicide phase that forms.

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