Correlation between oxidant concentrations, morphological aspects and etching kinetics of silicon nanowires during silver-assist electroless etching

2017 ◽  
Vol 425 ◽  
pp. 1-7 ◽  
Author(s):  
Besma Moumni ◽  
Abdelkader Ben Jaballah
Keyword(s):  
Silicon Nanowires ◽  
Electroless Etching ◽  
Morphological Aspects ◽  
Kinetics Of

Formation of Luminescent Silicon Nanowires and Porous Silicon by Metal-Assisted Electroless Etching

2014 ◽  
Vol 43 (4) ◽  
pp. 1271-1279 ◽  
Author(s):  
F. Karbassian ◽  
B. Kheyraddini Mousavi ◽  
S. Rajabali ◽  
R. Talei ◽  
S. Mohajerzadeh ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Nanowires ◽  
Electroless Etching

Dye-Improved Optical Absorption of Vertically Aligned Silicon Nanowire Arrays Synthesized by Electroless Etching of Silicon Wafer

2014 ◽  
Vol 895 ◽  
pp. 200-203 ◽  
Author(s):  
Hui Chiang Teoh ◽  
Sabar Derita Hutagalung
Keyword(s):  
Silicon Nanowires ◽  
High Performance ◽  
Silicon Nanowire ◽  
Incident Light ◽  
Electroless Etching ◽  
Dye Sensitized ◽  
Silicon Nanowire Arrays ◽  
Wide Range ◽  
Vertically Aligned ◽  
Si Wafer

Silicon nanowires (SiNWs) are important candidate for high performance electronic and optoelectronic devices due to their unique structures, electrical and optical properties. SiNWs were fabricated by silver-assisted electroless etching of Si wafer. Vertically aligned SiNW arrays with length about 8.75 μm and diameter of less than 90 nm have been fabricated. The reflectance of SiNWs without dye (12%) is greatly lower compared to bare Si wafer (25%). Therefore, SiNWs on Si substrate can be used as a good anti-reflection layer for a wide range of incident light. The reflectance of dye-sensitized SiNWs with red, green and blue dyes is 7%, 5.5%, and 5% respectively. The results confirmed that the reflectance of SiNWs with dye is much lower compared to SiNWs without dye and bare Si wafer. It was proven that dye on SiNWs can be used to reduce the reflectance (improved absorption) about 40% compared to SiNWs without dye.

Exploring the kinetics of ordered silicon nanowires with the formation of nanogaps using metal-assisted chemical etching

2014 ◽  
Vol 16 (48) ◽  
pp. 26711-26714 ◽  
Author(s):  
Chia-Yun Chen ◽  
Yu-Rui Liu
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Metal Assisted Chemical Etching ◽  
Kinetics Of

We explored the kinetics of ordered silicon nanowires with the formation of nanogaps prepared using metal-assisted chemical etching.

Kinetics of Tartrazine Photodegradation by Cu-Modified Silicon Nanowires

2018 ◽  
Vol 06 (01) ◽  
Author(s):  
Naama S ◽  
Hadjersi T ◽  
Menari H ◽  
Lamrani S
Keyword(s):  
Silicon Nanowires ◽  
Kinetics Of

Fabrication Characteristics of Silicon Nanowires via the Electrochemical Electroless Etching Method

2015 ◽  
Vol 15 (7) ◽  
pp. 5291-5294 ◽  
Author(s):  
ByeongSu Kang ◽  
Chae Hwan Jeong ◽  
Changheon Kim ◽  
Min-Young Kim ◽  
Bum Ho Choi ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Electroless Etching ◽  
Etching Method

scholarly journals Dependence of Performance of Si Nanowire Solar Cells on Geometry of the Nanowires

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Firoz Khan ◽  
Seong-Ho Baek ◽  
Jae Hyun Kim
Keyword(s):  
Solar Cells ◽  
Silicon Nanowires ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Filling Ratio ◽  
Si Nanowire ◽  
Electroless Etching ◽  
Sinws Array ◽  
Ag Deposition

The dependence of performance of silicon nanowires (SiNWs) solar cells on the growth condition of the SiNWs has been described. Metal-assisted electroless etching (MAE) technique has been used to grow SiNWs array. Different concentration of aqueous solution containing AgNO3and HF for Ag deposition is used. The diameter and density of SiNWs are found to be dependent on concentration of solution used for Ag deposition. The diameter and density of SiNWs have been used to calculate the filling ratio of the SINWs arrays. The filling ratio is increased with increase in AgNO3concentration, whereas it is decreased with increase in HF concentration. The minimum reflectance value achieved is ~1% for SiNWs of length of ~1.2 μm in the wavelength range of 300–1000 nm. The performance and diode parameters strongly depend on the geometry of SiNWs. The maximum short circuit current density achieved is 35.6 mA/cm2. The conversion efficiency of solar cell is 9.73% for SiNWs with length, diameter, and wire density of ~1.2 μm, ~75 nm, and 90 μm−2, respectively.

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