scholarly journals Characterization of deep level defects in thermally annealed Fe‐doped semi‐insulating InP by thermally stimulated current spectroscopy

1994 ◽  
Vol 76 (6) ◽  
pp. 3552-3555 ◽  
Author(s):  
K. Kuriyama ◽  
K. Tomizawa ◽  
Mari Kashiwakura ◽  
K. Yokoyama
Keyword(s):  
Deep Level ◽  
Thermally Stimulated Current ◽  
Thermally Stimulated Current Spectroscopy

Investigation of Deep Level Defects in Mercuric Iodide by Thermally Stimulated Current Spectroscopy

1990 ◽  
Vol 209 ◽  
Author(s):  
X.J. Bao ◽  
T.E. Schlesinger ◽  
R.B. James ◽  
A.Y. Cheng ◽  
C. Olrtale ◽  
...  
Keyword(s):  
Single Crystals ◽  
Deep Level ◽  
Metal Contacts ◽  
Mercuric Iodide ◽  
Heating Rates ◽  
Thermally Stimulated Current ◽  
Depolarization Current ◽  
Pyroelectric Effect ◽  
Thermally Stimulated Current Spectroscopy ◽  
Defect Levels

ABSTRACTMercuric iodide (HgI2) single crystals deposited with semitransparent Pd, Al and Ag contacts were studied by thermally stimulated current spectroscopy (TSC). Distinct differences were found among spectra obtained friom samples withdifferentmetal contacts, indicating that interactions between the metal contacts and mercuric iodide substrates have strong effects on the deep defect levels in mercuric iodide. The activation energies of some of these defect levels were estimated bytaking TSC spectra with different heating rates. In addition, a pyroelectric effect was observed in Ag-contactedsamplesbythermally stimulated depolarization current technique (TSDC). The implications of these results in device applicationsof mercuric iodide are discussed.

Growth of GaN without Yellow Luminescence

1995 ◽  
Vol 395 ◽  
Author(s):  
X. Zhang ◽  
P. Kung ◽  
D. Walker ◽  
A. Saxler ◽  
M. Razeghi
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Native Defect ◽  
Yellow Luminescence ◽  
Gallium Vacancy ◽  
Rich Condition

ABSTRACTWe report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2eV is attributed to native defect, most possibly the gallium vacancy. The yellow luminescence can be substantially reduced By growing GaN under Ga-rich condition or doping GaN with Ge or Mg.

Deep level transient spectroscopy characterization of InAs self-assembled quantum dots

2001 ◽  
Vol 89 (2) ◽  
pp. 1172-1174 ◽  
Author(s):  
V. V. Ilchenko ◽  
S. D. Lin ◽  
C. P. Lee ◽  
O. V. Tretyak
Keyword(s):  
Quantum Dots ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Self Assembled ◽  
Transient Spectroscopy
Sign in / Sign up

Export Citation Format

Share Document