On the influence of short and medium range order on the material band gap in hydrogenated amorphous silicon

2004 ◽  
Vol 96 (7) ◽  
pp. 3818-3826 ◽  
Author(s):  
A. H. Mahan ◽  
R. Biswas ◽  
L. M. Gedvilas ◽  
D. L. Williamson ◽  
B. C. Pan
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Hydrogenated Amorphous Silicon ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Hydrogenated Amorphous

Comparative Fluctuation Microscopy Study of Medium-Range Order in Hydrogenated Amorphous Silicon Deposited by Various Methods

2000 ◽  
Vol 609 ◽  
Author(s):  
P. M. Voyles ◽  
M. M. J. Treacy ◽  
H-C. Jin ◽  
J. R. Abelson ◽  
J. M. Gibson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Amorphous Matrix ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Hydrogenated Amorphous

ABSTRACTWe have characterized by fluctuation electron microscopy the medium-range order of hydrogenated amorphous silicon thin films deposited by a variety of methods. Films were deposited by reactive magnetron sputtering, hot-wire chemical vapor deposition, and plasma enhanced chemical vapor deposition with and without H2 dilution of the SiH4 precursor gas. All of the films show the signature of the paracrystalline structure typical of amorphous Si. There are small variations in the degree of medium-range order with deposition method and H content. The PECVD film grown with high H2 dilution contains Si crystals ∼5 nm in diameter at a density of ∼109 cm−2. The amorphous matrix surrounding these crystals shows no difference in mediumrange order from the standard PECVD film. This supports explanations of the resistance of the H-dilution material to light-induced degradation that depend only on the presence of crystalline grains without modifications of the amorphous matrix.

Short‐range order and microstructure in hydrogenated amorphous silicon

1991 ◽  
Vol 69 (11) ◽  
pp. 7656-7659 ◽  
Author(s):  
P. Danesh ◽  
B. Pantchev ◽  
I. Savatinova ◽  
E. Liarokapis ◽  
Y. S. Raptis
Keyword(s):  
Amorphous Silicon ◽  
Short Range ◽  
Short Range Order ◽  
Hydrogenated Amorphous Silicon ◽  
Range Order ◽  
Hydrogenated Amorphous

The Structure of Ion-Implanted Amorphous Silicon

1998 ◽  
Vol 540 ◽  
Author(s):  
J. M. Gibson ◽  
J-Y. Cheng ◽  
P. Voyles ◽  
M.M.J. TREACY ◽  
D.C. Jacobson
Keyword(s):  
Amorphous Silicon ◽  
Network Model ◽  
Random Network ◽  
Amorphous Semiconductors ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Large Heat ◽  
Continuous Random Network ◽  
Ion Implanted

AbstractUsing fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.

Medium-Range Order of Amorphous Silicon Germanium Alloys: Small-Angle X-Ray Scattering Study

1989 ◽  
Vol 28 (Part 2, No. 7) ◽  
pp. L1092-L1095 ◽  
Author(s):  
Shin-ichi Muramatsu ◽  
Toshikazu Shimada ◽  
Hiroshi Kajiyama ◽  
Kazufumi Azuma ◽  
Takeshi Watanabe ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Small Angle ◽  
Silicon Germanium ◽  
Range Order ◽  
Medium Range Order ◽  
X Ray ◽  
X Ray Scattering ◽  
Medium Range ◽  
Scattering Study ◽  
Amorphous Silicon Germanium

Fabrication of narrow-band-gap hydrogenated amorphous silicon by chemical annealing

1998 ◽  
Vol 84 (3) ◽  
pp. 1333-1339 ◽  
Author(s):  
Wataru Futako ◽  
Shinya Takeoka ◽  
Charles M. Fortmann ◽  
Isamu Shimizu
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Narrow Band ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Annealing ◽  
Hydrogenated Amorphous

scholarly journals Silicon Heterojunction Solar Cells with p-Type Silicon Carbon Window Layer

Crystals ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 402 ◽  
Author(s):  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Ming Jie Zhao ◽  
Hai-Jun Lin ◽  
Wen-Zhang Zhu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Flow Rate ◽  
Computer Aided Design ◽  
Hydrogenated Amorphous Silicon ◽  
Wavelength Region ◽  
Window Layer ◽  
Solar Cell Performance ◽  
Hydrogenated Amorphous

Boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films are deposited using high frequency 27.12 MHz plasma enhanced chemical vapor deposition system as a window layer of silicon heterojunction (SHJ) solar cells. The CH4 gas flow rate is varied to deposit various a-SiC:H films, and the optical and electrical properties are investigated. The experimental results show that at the CH4 flow rate of 40 sccm the a-SiC:H has a high band gap of 2.1 eV and reduced absorption coefficients in the whole wavelength region, but the electrical conductivity deteriorates. The technology computer aided design simulation for SHJ devices reveal the band discontinuity at i/p interface when the a-SiC:H films are used. For fabricated SHJ solar cell performance, the highest conversion efficiency of 22.14%, which is 0.33% abs higher than that of conventional hydrogenated amorphous silicon window layer, can be obtained when the intermediate band gap (2 eV) a-SiC:H window layer is used.

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