scholarly journals Electronically enhanced surface diffusion during Ge growth on Si(100)

2011 ◽  
Vol 109 (8) ◽  
pp. 084320 ◽  
Author(s):  
Ali Oguz Er ◽  
Hani E. Elsayed-Ali
2004 ◽  
Vol 808 ◽  
Author(s):  
George T. Dalakos ◽  
Joel L. Plawsky ◽  
Peter D. Persans

ABSTRACTGlow discharge amorphous hydrogenated silicon (a-Si:H) prepared at near room temperature typically results in an inhomogeneous morphology that is undesirable for a number of thin film applications. The most commonly observed features of this include columnar morphology and surface roughness. This usually results from anodic deposition, where substrates are placed on the grounded electrode. We have discovered that placing substrates on the RF-powered electrode (referred to as cathodic deposition) offers a much wider processing range for homogenous growth than anodic growth. We have also found that the magnitude of the surface roughness and the bulk void fraction of both anodic and cathodic a-Si:H thin films processed at low-temperatures is proportional to ∼D/F, where D is the surface diffusivity and F, the adatom flux, though anodic and cathodic deposition affect these global parameters differently. Surface processes unique to cathodic deposition can enhance adatom surface diffusion, while diffusion during anodic deposition is fixed and cannot attain homogeneous growth at high adatom fluxes. Processing a-Si:H on the cathode, associated with enhanced adatom surface diffusion, allows for homogeneous growth even at high deposition rates that has benefits for a number of applications.


1982 ◽  
Vol 123 (1) ◽  
pp. 89-98 ◽  
Author(s):  
S.M. Rossnagel ◽  
R.S. Robinson ◽  
H.R. Kaufman

2004 ◽  
Vol 84 (4) ◽  
pp. 505-507 ◽  
Author(s):  
Guus Rijnders ◽  
Dave H. A. Blank ◽  
Junghoon Choi ◽  
Chang-Beom Eom

2018 ◽  
Vol 17 (10) ◽  
pp. 915-922 ◽  
Author(s):  
Yiyang Li ◽  
Hungru Chen ◽  
Kipil Lim ◽  
Haitao D. Deng ◽  
Jongwoo Lim ◽  
...  

1982 ◽  
Vol 123 (1) ◽  
pp. A444
Author(s):  
S.M. Rossnagel ◽  
R.S. Robinson ◽  
H.R. Kaufman

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