Relating Ultrastable Glass Formation to Enhanced Surface Diffusion via the Johari–Goldstein β-Relaxation in Molecular Glasses

2017 ◽  
Vol 8 (12) ◽  
pp. 2739-2744 ◽  
Author(s):  
K. L. Ngai ◽  
Li-Min Wang ◽  
Hai-Bin Yu
Keyword(s):  
Surface Diffusion ◽  
Glass Formation ◽  
Molecular Glasses ◽  
Β Relaxation ◽  
Enhanced Surface

Using tobacco mosaic virus to probe enhanced surface diffusion of molecular glasses

Soft Matter ◽  
2016 ◽  
Vol 12 (44) ◽  
pp. 9115-9120 ◽  
Author(s):  
Yue Zhang ◽  
Richard Potter ◽  
William Zhang ◽  
Zahra Fakhraai
Keyword(s):  
Tobacco Mosaic Virus ◽  
Mosaic Virus ◽  
Surface Diffusion ◽  
Molecular Glasses ◽  
Enhanced Surface

Enhanced Surface Diffusion in Low-temperature a-Si:H Processing

2004 ◽  
Vol 808 ◽  
Author(s):  
George T. Dalakos ◽  
Joel L. Plawsky ◽  
Peter D. Persans
Keyword(s):  
Surface Roughness ◽  
Surface Diffusion ◽  
Room Temperature ◽  
Cathodic Deposition ◽  
Hydrogenated Silicon ◽  
Surface Diffusivity ◽  
Amorphous Hydrogenated Silicon ◽  
Anodic Deposition ◽  
Enhanced Surface ◽  
Global Parameters

ABSTRACTGlow discharge amorphous hydrogenated silicon (a-Si:H) prepared at near room temperature typically results in an inhomogeneous morphology that is undesirable for a number of thin film applications. The most commonly observed features of this include columnar morphology and surface roughness. This usually results from anodic deposition, where substrates are placed on the grounded electrode. We have discovered that placing substrates on the RF-powered electrode (referred to as cathodic deposition) offers a much wider processing range for homogenous growth than anodic growth. We have also found that the magnitude of the surface roughness and the bulk void fraction of both anodic and cathodic a-Si:H thin films processed at low-temperatures is proportional to ∼D/F, where D is the surface diffusivity and F, the adatom flux, though anodic and cathodic deposition affect these global parameters differently. Surface processes unique to cathodic deposition can enhance adatom surface diffusion, while diffusion during anodic deposition is fixed and cannot attain homogeneous growth at high adatom fluxes. Processing a-Si:H on the cathode, associated with enhanced adatom surface diffusion, allows for homogeneous growth even at high deposition rates that has benefits for a number of applications.

Impact enhanced surface diffusion during impurity induced sputter cone formation

1982 ◽  
Vol 123 (1) ◽  
pp. 89-98 ◽  
Author(s):  
S.M. Rossnagel ◽  
R.S. Robinson ◽  
H.R. Kaufman
Keyword(s):  
Surface Diffusion ◽  
Cone Formation ◽  
Enhanced Surface

scholarly journals Enhanced surface diffusion through termination conversion during epitaxial SrRuO3 growth

2004 ◽  
Vol 84 (4) ◽  
pp. 505-507 ◽  
Author(s):  
Guus Rijnders ◽  
Dave H. A. Blank ◽  
Junghoon Choi ◽  
Chang-Beom Eom
Keyword(s):  
Surface Diffusion ◽  
Enhanced Surface
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