Postgrowth tuning of quantum‐well infrared detectors by rapid thermal annealing

1994 ◽  
Vol 75 (12) ◽  
pp. 8234-8236 ◽  
Author(s):  
A. G. Steele ◽  
M. Buchanan ◽  
H. C. Liu ◽  
Z. R. Wasilewski
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Infrared Detectors

Improvement of GaAs/AlGaAs quantum well laser diodes by rapid thermal annealing

1994 ◽  
Vol 23 (1) ◽  
pp. 1-6 ◽  
Author(s):  
K. Xie ◽  
C. R. Wie ◽  
J. A. Varriano ◽  
G. W. Wicks
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Laser Diodes ◽  
Quantum Well Laser

Chemical Effects in Ion Implantation Induced Quantum Well Intermixing

2000 ◽  
Vol 647 ◽  
Author(s):  
Todd W. Simpson ◽  
Paul G. Piva ◽  
Ian V. Mitchell
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Blue Shift ◽  
Quantum Well Intermixing ◽  
Chemical Effects ◽  
M 31 ◽  
Shift Data ◽  
Fluence Dependence

AbstractIon implantation followed by rapid thermal annealing is used to induce layer intermixing and thus selectively blue-shift the emission wavelength of InP-based quantum well hetero- structures. The intermixing is greatly enhanced over thermal intermixing due to the supersaturation of defects. The magnitude of the observed blue-shift has been studied previously as a function of ion fluence and ion mass: the dependence on ion mass is well established, with heavier ions producing a larger shift. We show here that chemical effects can also play a significant role in determining the induced blue-shift. Data are presented from the implantation of the similar mass ions; aluminum (m~27), silicon (m~28) and phosphorus (m~31). The P- induced blue shift displays a monotonic increase with fluence, consistent with previous studies; however, the fluence dependence of Al- and Si-induced blue-shifts both deviate significantly from the behaviour for P. These results have important implications for attempts to scale intermixing behaviour with ion mass.

Transparency of band-gap-shifted InGaAsP/lnP quantum-well waveguides

1996 ◽  
Vol 74 (S1) ◽  
pp. 32-34 ◽  
Author(s):  
J. -J. He ◽  
Emil S. Koteles ◽  
M. Davis ◽  
P. J. Poole ◽  
M. Dion ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Quantum Well ◽  
Ion Implantation ◽  
Band Gap ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Blue Shift ◽  
Pin Diode ◽  
Excess Loss ◽  
Absorption Constant

The properties of band-gap-shifted InGaAsP/InP quantum-well waveguides were investigated. A 90 nm blue-shift of the band gap was obtained by phosphorus ion implantation followed by rapid thermal annealing. It was shown that the absorption constant at the original band edge was reduced from 110 to only 4 cm−1. No waveguide excess loss was observed due to the QW-intermixing process. Good electrical properties of the pin diode were also maintained.

scholarly journals DIFFUSION OF ALUMINUM IN DOUBLE QUANTUM WELL STRUCTURE UPON RAPID THERMAL ANNEALING

1998 ◽  
Vol 47 (6) ◽  
pp. 945
Author(s):  
XU ZUN-TU ◽  
XU JUN-YING ◽  
YANG GUO-WEN ◽  
ZHANG JING-MING ◽  
YIN TAO ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Double Quantum ◽  
Quantum Well Structure ◽  
Double Quantum Well

Rapid-thermal annealing for quantum-well heterostructure device fabrication

1992 ◽  
Vol 39 (1) ◽  
pp. 41-49 ◽  
Author(s):  
D.R. Myers ◽  
G.A. Vawter ◽  
E.D. Jones ◽  
T.E. Zipperian ◽  
T.J. Drummond ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Device Fabrication

Characteristic of rapid thermal annealing on GaIn(N)(Sb)As∕GaAs quantum well grown by molecular-beam epitaxy

2006 ◽  
Vol 99 (3) ◽  
pp. 034903 ◽  
Author(s):  
H. Zhao ◽  
Y. Q. Xu ◽  
H. Q. Ni ◽  
S. Y. Zhang ◽  
D. H. Wu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam
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