Capacitance-voltage modeling of metal-ferroelectric-semiconductor capacitors based on epitaxial oxide heterostructures

2011 ◽  
Vol 98 (10) ◽  
pp. 102901 ◽  
Author(s):  
Woong Choi ◽  
Sunkook Kim ◽  
Yong Wan Jin ◽  
Sang Yoon Lee ◽  
Timothy D. Sands
Keyword(s):  
Oxide Heterostructures ◽  
Capacitance Voltage ◽  
Epitaxial Oxide

scholarly journals Strain Engineering of Epitaxial Oxide Heterostructures Beyond Substrate Limitations

2019 ◽  
Author(s):  
Xiong Deng ◽  
Chao Chen ◽  
Deyang Chen ◽  
Xiangbin Cai ◽  
Chao Xu ◽  
...  
Keyword(s):  
Strain Engineering ◽  
Oxide Heterostructures ◽  
Epitaxial Oxide

Progress Toward Viable Epitaxial Oxide Ferroelectric Waveguide Heterostructures on Gaas

1993 ◽  
Vol 310 ◽  
Author(s):  
D. K. Fork ◽  
J. J. Kingston ◽  
G. B. Anderson ◽  
E. J. Tarsa ◽  
J. S. Speck
Keyword(s):  
Lithium Niobate ◽  
Optical Waveguides ◽  
Critical Issue ◽  
Oxide Heterostructures ◽  
Thermally Induced ◽  
Cladding Layer ◽  
Gaas Substrates ◽  
Novel Approach ◽  
Waveguide Fabrication ◽  
Epitaxial Oxide

AbstractDiscoveries within the last two years have created possibilities for the fabrication of epitaxial oxide heterostructures on GaAs substrates. In particular, magnesium oxide, MgO, may have broad applications, including its use as a cladding layer in optical waveguides. This report expands upon earlier work by revealing additional epitaxial structures involving lithium niobate which have been grown. There are now five known variants of Z-lithium niobate on GaAs: direct Z-cut growth on GaAs (111)A or B, Z-cut growth on MgO (111)/GaAs (111)A or B, and Z-cut growth on MgO (111)/GaAs (001). Broad in-plane misalignment (about 15°) characterizes the latter structure, whereas the former posses a textural width of 3° to 5° in the plane. All structures contain internal boundaries resulting from 180° rotations about the Zaxis. A critical issue for any ferroelectric heterostructure is its integrity in the presence of thermally induced tensile strain. Approaches to the mitigation of thin fim fracture are discussed and a novel approach to strain relief via ridge waveguide fabrication is reported.

scholarly journals Strain-induced stabilization of new magnetic spinel structures in epitaxial oxide heterostructures

2007 ◽  
Vol 144 (1-3) ◽  
pp. 43-48 ◽  
Author(s):  
F. Rigato ◽  
S. Estradé ◽  
J. Arbiol ◽  
F. Peiró ◽  
U. Lüders ◽  
...  
Keyword(s):  
Oxide Heterostructures ◽  
Spinel Structures ◽  
Epitaxial Oxide

scholarly journals Strain engineering of epitaxial oxide heterostructures beyond substrate limitations

Matter ◽  
2021 ◽  
Vol 4 (4) ◽  
pp. 1323-1334 ◽  
Author(s):  
Xiong Deng ◽  
Chao Chen ◽  
Deyang Chen ◽  
Xiangbin Cai ◽  
Xiaozhe Yin ◽  
...  
Keyword(s):  
Strain Engineering ◽  
Oxide Heterostructures ◽  
Epitaxial Oxide

Magnetic properties of epitaxial oxide heterostructures

2008 ◽  
Vol 145 (1-2) ◽  
pp. 18-22 ◽  
Author(s):  
S. Ramachandran ◽  
J.T. Prater ◽  
N. Sudhakar ◽  
D. Kumar ◽  
J. Narayan
Keyword(s):  
Magnetic Properties ◽  
Oxide Heterostructures ◽  
Epitaxial Oxide

scholarly journals Oscillatory Exchange Coupling and Positive Magnetoresistance in Epitaxial Oxide Heterostructures

2000 ◽  
Vol 85 (17) ◽  
pp. 3728-3731 ◽  
Author(s):  
K. R. Nikolaev ◽  
A. Yu. Dobin ◽  
I. N. Krivorotov ◽  
W. K. Cooley ◽  
A. Bhattacharya ◽  
...  
Keyword(s):  
Exchange Coupling ◽  
Oxide Heterostructures ◽  
Positive Magnetoresistance ◽  
Epitaxial Oxide

Laser Engineering of Barrier Structures Based on Solid Solution ZnCdHgTe.

2002 ◽  
Vol 719 ◽  
Author(s):  
Galina Khlyap
Keyword(s):  
Room Temperature ◽  
Film Surface ◽  
Charge Carriers ◽  
Barrier Structure ◽  
Free Charge ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Laser Engineering ◽  
Charged Defects ◽  
Epilayer Surface

AbstractRoom-temperature electric investigations carried out in CO2-laser irradiated ZnCdHgTe epifilms revealed current-voltage and capacitance-voltage dependencies typical for the metal-semiconductor barrier structure. The epilayer surface studies had demonstrated that the cell-like relief has replaced the initial tessellated structure observed on the as-grown samples. The detailed numerical analysis of the experimental measurements and morphological investigations of the film surface showed that the boundaries of the cells formed under the laser irradiation are appeared as the regions of accumulation of derived charged defects of different type of conductivity supplying free charge carriers under the applied electric field.

HVPE-GROWN AlGaN/GaN HEMTs

2003 ◽  
Vol 764 ◽  
Author(s):  
B. Luo ◽  
F. Ren ◽  
M. A. Mastro ◽  
D. Tsvetkov ◽  
A. Pechnikov ◽  
...  
Keyword(s):  
High Electron Mobility Transistors ◽  
Hydride Vapor Phase Epitaxy ◽  
Root Mean Square Roughness ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Collapse Characteristics ◽  
Capacitance Voltage ◽  
Source Current ◽  
Measurement Area

AbstractHigh quality undoped AlGaN/GaN high electron mobility transistors(HEMTs) structures have been gorwn by Hydride Vapor Phase Epitaxy (HVPE). The morphology of the films grown on Al2O3 substrates is excellent with root-mean-square roughness of ∼0.2nm over 10×10μm2 measurement area. Capacitance-voltage measurements show formation of dense sheet of charge at the AlGaN/GaN interface. HEMTs with 1μm gate length fabricated on these structures show transconductances in excess of 110 mS/mm and drain-source current above 0.6A/mm. Gate lag measurements show similar current collapse characteristics to HEMTs fabricated in MBE- or MOCVD grown material.

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