Misfit strain, relaxation, and band‐gap shift in GaxIn1−xP/InP epitaxial layers

1994 ◽  
Vol 75 (6) ◽  
pp. 3024-3029 ◽  
Author(s):  
A. Bensaada ◽  
A. Chennouf ◽  
R. W. Cochrane ◽  
J. T. Graham ◽  
R. Leonelli ◽  
...  
Keyword(s):  
Band Gap ◽  
Strain Relaxation ◽  
Misfit Strain ◽  
Epitaxial Layers

Anisotropic Misfit Strain Relaxation in Thin Epitaxial Layers

1999 ◽  
Vol 171 (1) ◽  
pp. 289-294 ◽  
Author(s):  
J. Domagała ◽  
J. Bąk-Misiuk ◽  
J. Adamczewska ◽  
Z. R. Zytkiewicz ◽  
E. Dynowska ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Misfit Strain ◽  
Epitaxial Layers

scholarly journals Interface relaxation and band gap shift in epitaxial layers

AIP Advances ◽  
2012 ◽  
Vol 2 (4) ◽  
pp. 042185 ◽  
Author(s):  
Ziming Zhu ◽  
Ai Zhang ◽  
Yan He ◽  
Gang Ouyang ◽  
Guowei Yang
Keyword(s):  
Band Gap ◽  
Epitaxial Layers

scholarly journals Misfit Strain Relaxation of Ferroelectric PbTiO3/LaAlO3 (111) Thin Film System

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Y. B. Xu ◽  
Y. L. Tang ◽  
Y. L. Zhu ◽  
Y. Liu ◽  
S. Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Strain Relaxation ◽  
Misfit Strain ◽  
Film System ◽  
Thin Film System

Strain relaxation and band-gap tunability in ternaryInxGa1−xNnanowires

2008 ◽  
Vol 78 (19) ◽  
Author(s):  
H. J. Xiang ◽  
Su-Huai Wei ◽  
Juarez L. F. Da Silva ◽  
Jingbo Li
Keyword(s):  
Band Gap ◽  
Strain Relaxation

Stress Relaxation in Uniquely Oriented SiGe/Si Epitaxial Layers

1999 ◽  
Vol 594 ◽  
Author(s):  
M. E. Ware ◽  
R. J. Nemanich
Keyword(s):  
Stress Relaxation ◽  
Surface Morphology ◽  
Strain Relaxation ◽  
Epitaxial Layers ◽  
Misfit Dislocations ◽  
Strained Layers ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Deposited Films

AbstractThis study explores stress relaxation of epitaxial SiGe layers grown on Si substrates with unique orientations. The crystallographic orientations of the Si substrates used were off-axis from the (001) plane towards the (111) plane by angles, θ = 0, 10, and 22 degrees. We have grown 100nm thick Si(1−x) Ge(x) epitaxial layers with x=0.3 on the Si substrates to examine the relaxation process. The as-deposited films are metastable to the formation of strain relaxing misfit dislocations, and thermal annealing is used to obtain highly relaxed films for comparison. Raman spectroscopy has been used to measure the strain relaxation, and atomic force microscopy has been used to explore the development of surface morphology. The Raman scattering indicated that the strain in the as-deposited films is dependent on the substrate orientation with strained layers grown on Si with 0 and 22 degree orientations while highly relaxed films were grown on the 10 degree substrate. The surface morphology also differed for the substrate orientations. The 10 degree surface is relatively smooth with hut shaped structures oriented at predicted angles relative to the step edges.

Strain relaxation of AlxGa1−xN epitaxial layers on GaN and SiC substrates

1999 ◽  
Vol 286 (1-2) ◽  
pp. 284-288 ◽  
Author(s):  
J Domagala ◽  
M Leszczynski ◽  
P Prystawko ◽  
T Suski ◽  
R Langer ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Epitaxial Layers

Strain relaxation in AlN epitaxial layers grown on GaN single crystals

1999 ◽  
Vol 205 (1-2) ◽  
pp. 31-35 ◽  
Author(s):  
R Langer ◽  
A Barski ◽  
A Barbier ◽  
G Renaud ◽  
M Leszczynski ◽  
...  
Keyword(s):  
Single Crystals ◽  
Strain Relaxation ◽  
Epitaxial Layers

Mechanisms of misfit strain relaxation in epitaxially grown BLT (Bi4-xLaxTi3O12, x = 0.75) thin films

2003 ◽  
Vol 779 ◽  
Author(s):  
Hyung Seok Kim ◽  
Sang Ho Oh ◽  
Ju Hyung Suh ◽  
Chan Gyung Park
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Strain Relaxation ◽  
Lattice Misfit ◽  
Misfit Strain ◽  
Misfit Dislocations ◽  
Transmission Electron ◽  
Means Of Transmission ◽  
20 Nm

AbstractMechanisms of misfit strain relaxation in epitaxially grown Bi4-xLaxTi3O12 (BLT) thin films deposited on SrTiO3 (STO) and LaAlO3 (LAO) substrates have been investigated by means of transmission electron microscopy (TEM). The misfit strain of 20 nm thick BLT films grown on STO substrate was relaxed by forming misfit dislocations at the interface. However, cracks were observed in 100 nm thick BLT films grown on the same STO. It was confirmed that cracks were formed because of high misfit strain accumulated with increasing the thickness of BLT, that was not sufficiently relaxed by misfit dislocations. In the case of the BLT film grown on LAO substrate, the magnitude of lattice misfit between BLT and LAO was very small (~1/10) in comparison with the case of the BLT grown on STO. The relatively small misfit strain formed in layered structure of the BLT films on LAO, therefore, was easily relaxed by distorting the film, rather than forming misfit dislocations or cracks, resulting in misorientation regions in the BLT film.

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