Silicide formation process of Pt added Ni at low temperature: Control of NiSi2 formation

2011 ◽  
Vol 109 (6) ◽  
pp. 063506 ◽  
Author(s):  
Nobuyuki Ikarashi ◽  
Koji Masuzaki
2020 ◽  
pp. 146808742096933
Author(s):  
Xiangyu Meng ◽  
Sicheng Liu ◽  
Jingchen Cui ◽  
Jiangping Tian ◽  
Wuqiang Long ◽  
...  

A novel method called high-pressure air (HPA) jet controlled compression ignition (JCCI) based on the compound thermodynamic cycle was investigated in this work. The combustion process of premixed mixture can be controlled flexibly by the high-pressure air jet compression, and it characterizes the intensified low-temperature reaction and two-stage high-temperature reaction. The three-dimensional (3D) computational fluid dynamics (CFD) numerical simulation was employed to study the emission formation process and mechanism, and the effects of high-pressure air jet temperature and duration on emissions were also investigated. The simulation results showed that the NOx formation is mainly affected by the first-stage high-temperature reaction due to the higher reaction temperature. Overall, this combustion mode can obtain ultra-low NOx emission. The second-stage high-temperature reaction plays an important role in the CO and THC formation caused by the mixing effect of the high-pressure air and original in-cylinder mixture. The increasing air jet temperature leads to a larger high-temperature in-cylinder region and more fuel in the first-stage reaction, and therefore resulting in higher NOx emission. However, the increasing air jet temperature can significantly reduce the CO and THC emissions. For the air jet duration comparisons, both too short and too long air jet durations could induce higher NOx emission. A higher air jet duration would result in higher CO emission due to the more high-pressure air jet with relatively low temperature.


1998 ◽  
Vol 525 ◽  
Author(s):  
L. P. Ren ◽  
P. Liu ◽  
G. Z. Pan ◽  
Jason C. S. Woo

ABSTRACTA novel low temperature self-aligned Ti silicidation with Ge+ pre-amorphization implant (PAI) is presented. Compared to conventional high temperature PAM silicidation, the advantages of Ti salicidation at temperatures below the recrystallization of a pre-amorphized layer are: (1) C49 TiSi2 silicide formation occurs only in the pre-amorphized layer so that the silicide depth can be well controlled, forming a very sharp interface between the silicide and the Si substrate; (2) Ti just reacts with the amorphous layer, avoiding the so-called bridging issue in which the silicide grows laterally over the isolation or spacer; (3) the effects of metal thickness and substrate doping on silicide formation are suppressed.


2021 ◽  
Vol 312 ◽  
pp. 125364
Author(s):  
Jingxuan Cai ◽  
Chunmei Zhang ◽  
Li Zeng ◽  
Hao Xu ◽  
Jia Wang ◽  
...  

1963 ◽  
Vol 62 (2) ◽  
pp. 113-117 ◽  
Author(s):  
J. H. Bruemmer ◽  
R. W. Eddy ◽  
W. J. Duryea

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