Solid‐phase epitaxial regrowth of Sb‐implanted Si1−xGexstrained layers: Kinetics and electrical properties

1994 ◽  
Vol 75 (8) ◽  
pp. 3936-3943 ◽  
Author(s):  
Z. Atzmon ◽  
M. Eizenberg ◽  
Y. Shacham‐Diamand ◽  
J. W. Mayer ◽  
F. Schäffler
Keyword(s):  
Electrical Properties ◽  
Solid Phase ◽  
Epitaxial Regrowth

Si-On-Sapphire and Si Implanted with Zr Ions: Lattice Location, Solid Phase Epitaxial Regrowth, and Electrical Properties

1982 ◽  
Vol 14 ◽  
Author(s):  
I. Golecki ◽  
I. Suni
Keyword(s):  
Electrical Properties ◽  
Surface Segregation ◽  
Solid Phase ◽  
Rutherford Backscattering ◽  
Lattice Location ◽  
Temperature Range ◽  
Epitaxial Regrowth ◽  
Amorphous Si ◽  
Solid Phase Regrowth

ABSTRACTZr ions have been implanted at 300 keV (Rp= 1400Å) and doses of 3×1012 − 3×l015 Zr/cm2 into Si-implanted, amorphous Sip layers on (100) bulk Si and Sion- sapphire. Rutherford backscattering and channeling spectrometry was used to study the Zr distribution and lattice location during solid-phase regrowth of the Si layers. The regrowth at 500—550°C stops at 3.4хl020 Zr/cm3, and Zr exhibits interface trapping and surface segregation effects. In this temperature range, Zr is essentially non-substitutional, and inactive electrically.

Performance of (110) p-channel SOI-MOSFETs fabricated by deep-amorphization and solid-phase epitaxial regrowth processes

2011 ◽  
Vol 88 (7) ◽  
pp. 1265-1268
Author(s):  
A. Ohata ◽  
Y. Bae ◽  
T. Signamarcheix ◽  
J. Widiez ◽  
B. Ghyselen ◽  
...  
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth

Solid phase epitaxial regrowth of Si1−xGex/Si strained‐layer structures amorphized by ion implantation

1989 ◽  
Vol 54 (1) ◽  
pp. 42-44 ◽  
Author(s):  
B. T. Chilton ◽  
B. J. Robinson ◽  
D. A. Thompson ◽  
T. E. Jackman ◽  
J.‐M. Baribeau
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Strained Layer ◽  
Epitaxial Regrowth ◽  
Layer Structures

USJ formation using solid phase epitaxial regrowth and femtosencond laser anneal

2012 ◽  
Author(s):  
Tzu-Lang Shih ◽  
Sheng-Wen Chen ◽  
Chang-Peng Wu ◽  
Chung-Wei Cheng ◽  
Chih-Wei Chien ◽  
...  
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth ◽  
Laser Anneal

scholarly journals Atomistic modeling of the Ge composition dependence of solid phase epitaxial regrowth in SiGe alloys

2017 ◽  
Vol 122 (10) ◽  
pp. 105702
Author(s):  
M. Prieto-Depedro ◽  
A. Payet ◽  
B. Sklénard ◽  
I. Martin-Bragado
Keyword(s):  
Composition Dependence ◽  
Solid Phase ◽  
Atomistic Modeling ◽  
Epitaxial Regrowth

Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth

2004 ◽  
Vol 22 (1) ◽  
pp. 306 ◽  
Author(s):  
R. Lindsay ◽  
K. Henson ◽  
W. Vandervorst ◽  
K. Maex ◽  
B. J. Pawlak ◽  
...  
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Time-Resolved Reflectivity Study of Solid-Phase Epitaxial Regrowth in Relaxed and Strained Si1−xGex Epilayers

1992 ◽  
Vol 281 ◽  
Author(s):  
T. E. Haynes ◽  
C. Lee ◽  
K. S. Jones
Keyword(s):  
Composition Dependence ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Alloy Layer ◽  
Atomic Fraction ◽  
Bulk Alloy ◽  
Strained Layers ◽  
Time Resolved ◽  
Epitaxial Regrowth ◽  
Different Types

ABSTRACTThe rate of solid-phase epitaxial regrowth has been studied using time-resolved reflectivity in three different types of SiGe/Si epilayers amorphized by ion implantation. In two of these cases, the alloy epilayer contained either 12% or 20% Ge, and the amorphization depth was greater than the thickness (2000 Å) of the SiGe alloy layer. Time-resolved reflectivity measurements showed that the rate of regrowth was not constant in these two cases, but first decreased after passing the SiGe/Si interface, and then increased. The minimum regrowth rate occurred closer to the SiGe/Si interface in the epilayers with the larger Ge atomic fraction. In the third type of sample, the alloy epilayer thickness was ∼7μm, so that the initial epilayer (15% Ge) had the lattice constant of the bulk alloy. Furthermore, amorphization and regrowth occurred entirely within the relaxed alloy layer. In this case, the regrowth rate was constant. The composition dependence of the regrowth-rate transient in the strained layers is discussed in the context of a ‘critical-thickness’ model of strain relaxation.

The Influence of Dopant Type on Polysilicon Grain Growth and Solid Phase Epitaxial Regrowth

1997 ◽  
Vol 3 (S2) ◽  
pp. 477-478
Author(s):  
M.G. Shlepr ◽  
G.A. Schrantz ◽  
A.L. Rivoli ◽  
G. Bajor
Keyword(s):  
Grain Growth ◽  
Solid Phase ◽  
Convergent Beam Electron Diffraction ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Process Technology ◽  
Epitaxial Regrowth ◽  
Transmission Electron ◽  
Polysilicon Emitters ◽  
Convergent Beam

A recent process technology to manufacture bipolar junction transistors utilizes polysilicon emitters. Polysilicon is deposited, appropriately doped to form both NPN and PNP transistors, and exposed to temperatures that result in grain growth. Since polysilicon is in contact with Si( 100) at the emitter, base, and collector (Fig. 1), solid phase epitaxial regrowth might also occur. Production runs with this structure occasionally produce transistors with low current gain. High and low gain NPN and PNP transistors were characterized by transmission electron microscopy.Vertical sections through NPN/PNP transistor arrays were made by the wedge technique, low-angle ion milled to electron-transparency, and viewed at 200 KV. The grain size of the polysilicon on oxide was recorded and estimated. The extent of epitaxial regrowth was quantified for each of the Si (100) contact areas. Convergent Beam Electron Diffraction (CBED) was used to confirm the orientation of the presumed regrown polysilicon.

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