Surface segregation and growth‐mode transitions during the initial stages of Si growth on Ge(001)2×1 by cyclic gas‐source molecular beam epitaxy from Si2H6

1994 ◽  
Vol 75 (1) ◽  
pp. 240-247 ◽  
Author(s):  
R. Tsu ◽  
H. Z. Xiao ◽  
Y.‐W. Kim ◽  
M.‐A. Hasan ◽  
H. K. Birnbaum ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Growth Mode ◽  
Gas Source ◽  
Mode Transitions

scholarly journals High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

2000 ◽  
Vol 5 (S1) ◽  
pp. 467-473 ◽  
Author(s):  
Sergey A. Nikishin ◽  
Nikolai N. Faleev ◽  
Vladimir G. Antipov ◽  
Sebastien Francoeur ◽  
Luis Grave de Peralta ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Hydride Vapor Phase Epitaxy ◽  
Growth Mode ◽  
Subsequent Growth ◽  
High Quality ◽  
Gas Source ◽  
Initial Nucleation ◽  
Rapid Transition ◽  
Gan On Si

We describe the growth of high quality AlN and GaN on Si(111) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH3). The initial nucleation (at 1130−1190K) of an AlN monolayer with full substrate coverage resulted in a very rapid transition to two-dimensional (2D) growth mode of AlN. The rapid transition to the 2D growth mode of AlN is essential for the subsequent growth of high quality GaN, and complete elimination of cracking in thick ( > 2 μm) GaN layers. We show, using Raman scattering (RS) and photoluminescence (PL) measurements, that the tensile stress in the GaN is due to thermal expansion mismatch, is below the ultimate strength of breaking of GaN, and produces a sizable shift in the bandgap. We show that the GSMBE AlN and GaN layers grown on Si can be used as a substrate for subsequent deposition of thick AlN and GaN layers by hydride vapor phase epitaxy (HVPE).

Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics

1997 ◽  
Vol 82 (5) ◽  
pp. 2288-2297 ◽  
Author(s):  
H. Kim ◽  
G. Glass ◽  
T. Spila ◽  
N. Taylor ◽  
S. Y. Park ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Film Growth ◽  
Gas Source

In surface segregation and growth‐mode transition during InGaAs growth by molecular‐beam epitaxy

1993 ◽  
Vol 63 (6) ◽  
pp. 821-823 ◽  
Author(s):  
H. Toyoshima ◽  
T. Niwa ◽  
J. Yamazaki ◽  
A. Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Growth Mode ◽  
Mode Transition

Narrow Si doping distributions in 6-doped GaAs, Al0.3Ga0.7As and Quantum Wells grown by Gas Source Molecular Beam Epitaxy

1989 ◽  
Vol 145 ◽  
Author(s):  
J.E. Cunningham ◽  
T.H. Chin ◽  
B. Tell ◽  
W. Jan ◽  
J. A. Ditzenberger ◽  
...  
Keyword(s):  
Activation Energy ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Atomic Diffusion ◽  
Si Doping ◽  
Gas Source ◽  
Capacitance Voltage

AbstractWe report very small interdiffusion and surface segregation of Si in δ-doped GaAs, A10.3Gao.7As and Quantum Wells grown at 580 C by Gas Source Molecular Beam Epitaxy. Capacitance-Voltage profiles of δ-doped layers are 38 Å wide for growth at 580 C and further, insignificant profile narrowing is observed at 530C and below. Much wider profiles are observed at equivalent substrate temperature for As4 growth. Atomic diffusion of Si in δ-doped Al0.3Ga0.7As is found to have a rate of D0=5× 10−cm2/sec with an activation energy of 1.8 eV.

Surface Hydrogen Effects on Ge Surface Segregation during Silicon Gas Source Molecular Beam Epitaxy

1994 ◽  
Vol 33 (Part 1, No. 4B) ◽  
pp. 2311-2316 ◽  
Author(s):  
Noboru Ohtani ◽  
Scott Mokler ◽  
Mao Hai Xie ◽  
Jing Zhang ◽  
Bruce A. Joyce
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Gas Source ◽  
Surface Hydrogen

High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

1999 ◽  
Vol 595 ◽  
Author(s):  
Sergey A. Nikishin ◽  
Nikolai N. Faleev ◽  
Vladimir G. Antipov ◽  
Sebastien Francoeur ◽  
Luis Grave de Peralta ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Hydride Vapor Phase Epitaxy ◽  
Growth Mode ◽  
Subsequent Growth ◽  
High Quality ◽  
Gas Source ◽  
Initial Nucleation ◽  
Rapid Transition ◽  
Gan On Si

AbstractWe describe the growth of high quality AlN and GaN on Si(111) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH3). The initial nucleation (at 1130-1190K) of an AlN monolayer with full substrate coverage resulted in a very rapid transition to two-dimensional (2D) growth mode of AlN. The rapid transition to the 2D growth mode of AlN is essential for the subsequent growth of high quality GaN, and complete elimination of cracking in thick ( > 2 μm) GaN layers. We show, using Raman scattering (RS) and photoluminescence (PL) measurements, that the tensile stress in the GaN is due to thermal expansion mismatch, is below the ultimate strength of breaking of GaN, and produces a sizable shift in the bandgap. We show that the GSMBE AlN and GaN layers grown on Si can be used as a substrate for subsequent deposition of thick AlN and GaN layers by hydride vapor phase epitaxy (HVPE).

Growth mode transitions in molecular-beam epitaxy of GaAs(001)

2003 ◽  
Vol 428 (1-2) ◽  
pp. 170-175 ◽  
Author(s):  
Vladimir I Trofimov ◽  
Hee Seok Park
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Mode ◽  
Mode Transitions
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