Growth of silicon thin films on erbium silicide by solid phase epitaxy

1994 ◽  
Vol 75 (1) ◽  
pp. 223-226 ◽  
Author(s):  
J.‐Y. Veuillen ◽  
C. d’Anterroches ◽  
T. A. Nguyen Tan
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films ◽  
Excimer Laser Irradiation

Solid phase epitaxy of silicon thin films by diode laser irradiation for photovoltaic applications

2012 ◽  
Vol 520 (24) ◽  
pp. 7087-7092 ◽  
Author(s):  
T. Schmidt ◽  
I. Höger ◽  
A. Gawlik ◽  
G. Andrä ◽  
F. Falk
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Diode Laser ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films ◽  
Photovoltaic Applications

Solid-Phase Amorphization in Layered Metal/Silicon thin Films

1987 ◽  
Vol 103 ◽  
Author(s):  
Menachem Nathan
Keyword(s):  
Thin Films ◽  
Free Energy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Glassy Phase ◽  
Solid Phase ◽  
General Scheme ◽  
Crystalline Compound ◽  
Nucleation Kinetics ◽  
Silicon Thin Films

ABSTRACTA general scheme for determining which metal-Si systems undergo solidphase amorphization (SPA) upon rapid thermal annealing is presented and used to investigate Ni-Si, Ti-Si, V-Si, Co-Si and Cr-Si reactions. SPA occurs only in the first three systems. With the glaring exception of Co-Si, the results agree with the thermodynamic predictions of SPA in systems in which the free energy of a glassy phase is significantly lower than the free energy of the separate components. The amorphization may also be influenced by the diffusing species and contamination. Following SPA, the first crystalline compound is determined by nucleation kinetics.

Solid phase epitaxy of ferrimagnetic Y3Fe5O12 garnet thin films

2008 ◽  
Vol 93 (9) ◽  
pp. 092505 ◽  
Author(s):  
Y. Krockenberger ◽  
H. Matsui ◽  
T. Hasegawa ◽  
M. Kawasaki ◽  
Y. Tokura
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Epitaxy

Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La–Nd; Ch = S–Te) by reactive solid-phase epitaxy

2004 ◽  
Vol 19 (7) ◽  
pp. 2137-2143 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Kouhei Takafuji ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Epitaxial Films ◽  
Annealing Process ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Preparation Conditions ◽  
Thermal Annealing Process

Processes and preparation conditions for growing epitaxial thin films of Cu-based, layered oxychalcogenides LnCuOCh (Ln = La, Ce, Pr or Nd; Ch = S1-xSex or Se1-yTey) are reported. Epitaxial thin films on MgO (001) substrates were prepared by a reactive solid-phase epitaxy method. Four-axes high-resolution x-ray diffraction measurements revealed that the crystallographic orientation is (001)[110] LnCuOCh || (001)[110] MgO and the internal stress of the crystalline lattices in the films are relaxed during thermal-annealing process of the reactive solid-phase epitaxy. Furthermore, except for CeCuOS, systematic variations in the lattice constant by chalcogen or lanthanide ion substitutions were observed. These results demonstrated that the reactive solid-phase epitaxy is an efficient technique for fabricating LnCuOCh epitaxial films.

Directional Field Aided Lateral Crystallization of Amorphous Silicon Thin Films

2001 ◽  
Vol 664 ◽  
Author(s):  
Marek A. T. Izmajlowicz ◽  
Neil A. Morrison ◽  
Andrew J. Flewitt ◽  
William I. Milne
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Excimer Laser Annealing ◽  
Solid Phase Crystallization ◽  
Metal Induced Crystallization ◽  
Silicon Thin Films ◽  
Induced Crystallization

ABSTRACTFor application to active matrix liquid crystal displays (AMLCDs), a low temperature (< 600 °C) process for the production of polycrystalline silicon is required to permit the use of inexpensive glass substrates. This would allow the integration of drive electronics onto the display panel. Current low temperature processes include excimer laser annealing, which requires expensive equipment, and solid phase crystallization, which requires high temperatures. It is known that by adding small amounts of metals such as nickel to the amorphous silicon the solid phase crystallization temperature can be significantly reduced. The rate of this solid phase metal induced crystallization is increased in the presence of an electric field. Previous work on field aided crystallization has reported crystal growth that either proceeds towards the positive terminal or is independent of the direction of the electric field. In this work, extensive investigation has consistently revealed directional crystallization, from the positive to the negative terminal, of amorphous silicon thin films during heat treatment in the presence of an electric field. This is the first time that this phenomenon has been reported. Models have been proposed for metal induced crystallization with and without an applied electric field in which a reaction between Ni and Si to produce NiSi is the rate-limiting step. The crystallization rate is increased in the presence of an electric field through the drift of positive Ni ions.

Solid phase epitaxy of EuTiO3 thin films on SrTiO3 (100) substrates with different oxygen contents

2013 ◽  
Vol 378 ◽  
pp. 243-245 ◽  
Author(s):  
K. Shimamoto ◽  
Y. Hirose ◽  
S. Nakao ◽  
T. Fukumura ◽  
T. Hasegawa
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Epitaxy
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