A Monte Carlo study of hot electron injection and interface state generation model for silicon metal‐oxide‐semiconductor field‐effect transistors

John J. Ellis‐Monaghan; K. W. Kim; Michael A. Littlejohn

doi:10.1063/1.355752

A Monte Carlo study of hot electron injection and interface state generation model for silicon metal‐oxide‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.355752 ◽

1994 ◽

Vol 75 (10) ◽

pp. 5087-5094 ◽

Cited By ~ 15

Author(s):

John J. Ellis‐Monaghan ◽

K. W. Kim ◽

Michael A. Littlejohn

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Monte Carlo Study ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Generation Model ◽

Hot Electron ◽

Hot Electron Injection ◽

State Generation

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Hot-electron injection in stacked-gate metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1890445 ◽

2005 ◽

Vol 97 (10) ◽

pp. 104501

Author(s):

M. P. Temple ◽

D. W. Dyke ◽

P. A. Childs

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Electron Injection ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Hot Electron Injection

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Transconductance degradation and interface state generation in metal‐oxide‐semiconductor field‐effect transistors with oxynitride gate dielectrics under hot‐carrier stress

Applied Physics Letters ◽

10.1063/1.102819 ◽

1990 ◽

Vol 56 (3) ◽

pp. 250-252 ◽

Cited By ~ 8

Author(s):

G. Q. Lo ◽

W. C. Ting ◽

D. K. Shih ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress ◽

State Generation

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Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

Applied Physics Letters ◽

10.1063/1.4896995 ◽

2014 ◽

Vol 105 (14) ◽

pp. 143505 ◽

Cited By ~ 3

Author(s):

Jyun-Yu Tsai ◽

Ting-Chang Chang ◽

Ching-En Chen ◽

Szu-Han Ho ◽

Kuan-Ju Liu ◽

...

Keyword(s):

Electron Scattering ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Gate Stacks ◽

Metal Gate ◽

Hot Electron Injection ◽

High K

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Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.4752456 ◽

2012 ◽

Vol 101 (13) ◽

pp. 133505 ◽

Cited By ~ 1

Author(s):

Wen-Hung Lo ◽

Ting-Chang Chang ◽

Jyun-Yu Tsai ◽

Chih-Hao Dai ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Bias Stress ◽

State Generation

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Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.6200 ◽

2008 ◽

Vol 47 (8) ◽

pp. 6200-6204 ◽

Cited By ~ 1

Author(s):

Chorng-Jye Sheu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Buried Channel ◽

P Type ◽

Post Stress

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Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxide semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.2969661 ◽

2008 ◽

Vol 104 (4) ◽

pp. 044504 ◽

Cited By ~ 9

Author(s):

Karim Huet ◽

Damien Querlioz ◽

Wipa Chaisantikulwat ◽

Jérôme Saint-Martin ◽

Arnaud Bournel ◽

...

Keyword(s):

Monte Carlo ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Monte Carlo Study ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Nanometer Scale

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Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.114001 ◽

2012 ◽

Vol 51 (11R) ◽

pp. 114001 ◽

Cited By ~ 1

Author(s):

Naoki Tega ◽

Hiroshi Miki ◽

Toshiyuki Mine ◽

Kazuyoshi Torii

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise

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Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.114001 ◽

2012 ◽

Vol 51 ◽

pp. 114001

Author(s):

Naoki Tega ◽

Hiroshi Miki ◽

Toshiyuki Mine ◽

Kazuyoshi Torii

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise

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On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1389318 ◽

2001 ◽

Vol 79 (6) ◽

pp. 863-865 ◽

Cited By ~ 4

Author(s):

Kangguo Cheng ◽

Jean-Pierre Leburton ◽

Karl Hess ◽

Joseph W. Lyding

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Hot Electron ◽

Carrier Injection

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Direct observation of channel hot-electron energy in short-channel metal-oxide-semiconductor field-effect transistors

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667466 ◽

2010 ◽

Author(s):

Gang Zhang ◽

Cheng Yang ◽

Hua-Min Li ◽

Tian-zi Shen ◽

Won Jong Yoo

Keyword(s):

Metal Oxide ◽

Electron Energy ◽

Direct Observation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Short Channel

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