The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon

2011 ◽  
Vol 109 (6) ◽  
pp. 063532 ◽  
Author(s):  
Zhidan Zeng ◽  
J. D. Murphy ◽  
R. J. Falster ◽  
Xiangyang Ma ◽  
Deren Yang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Oxygen Diffusion ◽  
Lattice Strain ◽  
Fermi Level Position

Low-temperature annealing of YBa2Cu3O7-x

1992 ◽  
Vol 50 (1) ◽  
pp. 88-89
Author(s):  
R.L. Sabatini ◽  
Yimei Zhu ◽  
Masaki Suenaga ◽  
A.R. Moodenbaugh
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Oxygen Diffusion ◽  
Diffusion Rate ◽  
Oxygen Depletion ◽  
Low Temperature Annealing ◽  
Transmission Electron ◽  
Microstructural Effects ◽  
Oxygen Diffusion Rate

Low temperature annealing (<400°C) of YBa2Cu3O7x in a ozone containing oxygen atmosphere is sometimes carried out to oxygenate oxygen deficient thin films. Also, this technique can be used to fully oxygenate thinned TEM specimens when oxygen depletion in thin regions is suspected. However, the effects on the microstructure nor the extent of oxygenation of specimens has not been documented for specimens exposed to an ozone atmosphere. A particular concern is the fact that the ozone gas is so reactive and the oxygen diffusion rate at these temperatures is so slow that it may damage the specimen by an over-reaction. Thus we report here the results of an investigation on the microstructural effects of exposing a thinned YBa2Cu3O7-x specimen in an ozone atmosphere using transmission electron microscopy and energy loss spectroscopy techniques.

Fermi level pinning in low‐temperature molecular beam epitaxial GaAs

1992 ◽  
Vol 61 (13) ◽  
pp. 1585-1587 ◽  
Author(s):  
H. Shen ◽  
F. C. Rong ◽  
R. Lux ◽  
J. Pamulapati ◽  
M. Taysing‐Lara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Fermi Level Pinning ◽  
Molecular Beam Epitaxial

Segregation tendencies of transition-metal dopants in wide band gap semiconductor nanowires

2020 ◽  
Vol 22 (48) ◽  
pp. 27987-27998
Author(s):  
Mehmet Aras ◽  
Sümeyra Güler-Kılıç ◽  
Çetin Kılıç
Keyword(s):  
Transition Metal ◽  
Fermi Level ◽  
Band Gap ◽  
Wide Band ◽  
Semiconductor Nanowires ◽  
Wide Band Gap ◽  
Semiconductor Nanowire ◽  
Fermi Level Position

The segregation tendency of an impurity in a semiconductor nanowire can be tuned by adjusting the Fermi level position.

What is the metal role an the fermi-level position at the interface with IV-IV compounds ?

1998 ◽  
Author(s):  
V. Aubry-Fortuna ◽  
J.-L. Perrossier ◽  
M. Mamor ◽  
F. Meyer ◽  
C. Frojdh ◽  
...  
Keyword(s):  
Fermi Level ◽  
Fermi Level Position

Specific Heat in the Pu-Am system

2006 ◽  
Vol 986 ◽  
Author(s):  
Ladislav Havela ◽  
Pavel Javorský ◽  
Alexander Shick ◽  
Franck Wastin ◽  
Eric Colineau
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Specific Heat ◽  
Lattice Expansion ◽  
Low Temperature Specific Heat

AbstractSpecific heat of Pu doped with Am was studied for several Am concentrations (8-20%) ensuring the δ-Pu fcc structure. The results reveal that the γ value of the low temperature specific heat is lower than originally assumed (γ of 35 - 55 mJ/mol K2 can be deduced for Pu-8%Am) and does not increase with the Am-induced lattice expansion. The findings can be taken as an indication of the absence of the Pu-5f states at the Fermi level.

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