Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells

2011 ◽  
Vol 109 (5) ◽  
pp. 053519 ◽  
Author(s):  
J. L. Yu ◽  
Y. H. Chen ◽  
C. Y. Jiang ◽  
Y. Liu ◽  
H. Ma
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy ◽  
Photocurrent Spectra

Phosphorus Passivation of GaAs

1998 ◽  
Vol 510 ◽  
Author(s):  
S.P. Watkins ◽  
X. Xu ◽  
J. Hu ◽  
R. Ares ◽  
P. Yeo ◽  
...  
Keyword(s):  
Room Temperature ◽  
Thin Layers ◽  
Difference Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Reflectance Difference Spectroscopy ◽  
Similar Chemical ◽  
Pl Intensity ◽  
Undoped Gaas

AbstractWe have performed a systematic study of the effect of various phosphorus passivation techniques on the room temperature photoluminescence (PL) intensity of undoped GaAs. The effects of passivation by two methods are compared: (1) the P-exchange reaction on exposure to tertiarybutylphosphine (TBP) vapour between 500-620°C, and (2) the growth of thin layers of GaP directly on GaAs. An x-ray diffraction technique was used to estimate the thickness of the passivating layers. Reflectance difference spectroscopy indicated a similar chemical origin for the two passivation methods. Both passivation techniques resulted in strong enhancements in the room temperature PL. PL intensity was observed to increase very rapidly with adsorbed P for both cases saturating at approximately 2 monolayers equivalent GaP coverage.

Reflectance Difference Spectroscopy of GaAs Asymmetric Surface Quantum Wells above the Fundamental Gap

1998 ◽  
Vol 170 (2) ◽  
pp. 317-321 ◽  
Author(s):  
L.F. Lastras-Martínez ◽  
D. Rönnow ◽  
M. Cardona ◽  
P. Specht ◽  
P.V. Santos ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy

Interface-Related In-Plane Optical Anisotropy of Quantum Wells Studied by Reflectance-Difference Spectroscopy

2005 ◽  
Vol 475-479 ◽  
pp. 1777-1782
Author(s):  
Y.H. Chen ◽  
X.L. Ye ◽  
Bo Xu ◽  
Yi Ping Zeng ◽  
Z.G. Wang
Keyword(s):  
Quantum Wells ◽  
Optical Anisotropy ◽  
Interface Roughness ◽  
Difference Spectroscopy ◽  
Quantum Well Structures ◽  
Semiconductor Interfaces ◽  
Atomic Segregation ◽  
Reflectance Difference Spectroscopy ◽  
Transition Index

The in-plane optical anisotropy of three groups of GaAs/AlGaAs quantum well structures has been studied by reflectance-difference spectroscopy (RDS). For GaAs/Al0.36Ga0.64As single QW structures, it is found that the optical anisotropy increases quickly as the well width is decreased. For an Al0.02Ga0.98As/AlAs multiple QW with a well width of 20nm, the optical anisotropy is observed not only for the transitions between ground states but also for those between the excited states with transition index n up to 5. An increase of the anisotropy with the transition energy, or equivalently the transition index n, is clearly observed. The detailed analysis shows that the observed anisotropy arises from the interface asymmetry of QWs, which is introduced by atomic segregation or anisotropic interface roughness formed during the growth of the structures. More, when the 1 ML InAs is inserted at one interface of GaAs/AlGaAs QW, the optical anisotropy of the QW can be increased by a factor of 8 due to the enhanced asymmetry of the QW. These results demonstrate clearly that the RDS is a sensitive and powerful tool for the characterization of semiconductor interfaces.

Sign in / Sign up

Export Citation Format

Share Document