In‐plane optical anisotropy of GaAs/AlAs multiple quantum wells probed by microscopic reflectance difference spectroscopy

1996 ◽  
Vol 69 (6) ◽  
pp. 782-784 ◽  
Author(s):  
B. Koopmans ◽  
B. Richards ◽  
P. Santos ◽  
K. Eberl ◽  
M. Cardona
Keyword(s):  
Quantum Wells ◽  
Optical Anisotropy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy

In-plane optical anisotropy in InxGa1−xN∕GaN multiple quantum wells induced by Pockels effect

2005 ◽  
Vol 86 (1) ◽  
pp. 011924 ◽  
Author(s):  
H. J. Chang ◽  
C. H. Chen ◽  
L. Y. Huang ◽  
Y. F. Chen ◽  
T. Y. Lin
Keyword(s):  
Quantum Wells ◽  
Optical Anisotropy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Pockels Effect

Optical anisotropy in GaAs/AlxGa1−xAs multiple quantum wells under thermally induced uniaxial strain

1993 ◽  
Vol 47 (20) ◽  
pp. 13933-13936 ◽  
Author(s):  
H. Shen ◽  
M. Wraback ◽  
J. Pamulapati ◽  
P. G. Newman ◽  
M. Dutta ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Anisotropy ◽  
Uniaxial Strain ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Thermally Induced

Interface-Related In-Plane Optical Anisotropy of Quantum Wells Studied by Reflectance-Difference Spectroscopy

2005 ◽  
Vol 475-479 ◽  
pp. 1777-1782
Author(s):  
Y.H. Chen ◽  
X.L. Ye ◽  
Bo Xu ◽  
Yi Ping Zeng ◽  
Z.G. Wang
Keyword(s):  
Quantum Wells ◽  
Optical Anisotropy ◽  
Interface Roughness ◽  
Difference Spectroscopy ◽  
Quantum Well Structures ◽  
Semiconductor Interfaces ◽  
Atomic Segregation ◽  
Reflectance Difference Spectroscopy ◽  
Transition Index

The in-plane optical anisotropy of three groups of GaAs/AlGaAs quantum well structures has been studied by reflectance-difference spectroscopy (RDS). For GaAs/Al0.36Ga0.64As single QW structures, it is found that the optical anisotropy increases quickly as the well width is decreased. For an Al0.02Ga0.98As/AlAs multiple QW with a well width of 20nm, the optical anisotropy is observed not only for the transitions between ground states but also for those between the excited states with transition index n up to 5. An increase of the anisotropy with the transition energy, or equivalently the transition index n, is clearly observed. The detailed analysis shows that the observed anisotropy arises from the interface asymmetry of QWs, which is introduced by atomic segregation or anisotropic interface roughness formed during the growth of the structures. More, when the 1 ML InAs is inserted at one interface of GaAs/AlGaAs QW, the optical anisotropy of the QW can be increased by a factor of 8 due to the enhanced asymmetry of the QW. These results demonstrate clearly that the RDS is a sensitive and powerful tool for the characterization of semiconductor interfaces.

scholarly journals In-Plane Optical Anisotropy in InxGa1—xN/GaN Multiple Quantum Wells

2003 ◽  
Vol 0 (1) ◽  
pp. 284-287
Author(s):  
C.H. Chen ◽  
L.Y. Huang ◽  
Y.F. Chen ◽  
T.Y. Lin
Keyword(s):  
Quantum Wells ◽  
Optical Anisotropy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

FAR INFRARED MAGNETO-ABSORPTION STUDY OF BARRIER IMPURITIES AND SCREENING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
Author(s):  
E. GLASER ◽  
B. V. SHANABROOK ◽  
R. J. WAGNER ◽  
R. L. HAWKINS ◽  
W. J. MOORE ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Far Infrared ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Absorption Study
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