An analysis of the high‐temperature relaxation in polycrystalline magnetite

1994 ◽  
Vol 75 (10) ◽  
pp. 6100-6102
Author(s):  
J. Castro ◽  
D. Martinez ◽  
J. Rivas ◽  
H. J. Blythe
Keyword(s):  
High Temperature ◽  
Temperature Relaxation

HIGH TEMPERATURE RELAXATION MECHANISMS IN Cu-Al SOLID SOLUTIONS

1985 ◽  
Vol 46 (C10) ◽  
pp. C10-367-C10-370 ◽  
Author(s):  
S. BELHAS ◽  
A. RIVIERE ◽  
J. WOIRGARD ◽  
J. VERGNOL ◽  
J. DE FOUQUET
Keyword(s):  
High Temperature ◽  
Solid Solutions ◽  
Temperature Relaxation

Temperature Relaxation between Systems with Negative Kelvin Temperatures

1987 ◽  
Vol 42 (6) ◽  
pp. 556-558 ◽  
Author(s):  
Ch. Zylka ◽  
G. Vojta
Keyword(s):  
High Temperature ◽  
Spin Systems ◽  
Mixing Rule ◽  
High Temperature Approximation ◽  
Temperature Relaxation ◽  
Harmonic Mixing

We investigate the problem of distributing a given amount of heat among three systems under the following conditions: The systems are able to exhibit negative Kelvin temperatures, and heat equalization always fulfills a harmonic mixing rule T = 2T(1) · T(2)/(T(1) + T(2)). Just this happens for spin systems in the high temperature approximation.

On the mechanism of low frequency (high temperature) relaxation in elastomers

1974 ◽  
Vol 16 (4) ◽  
pp. 993-999 ◽  
Author(s):  
Ye.A. Sidorovich ◽  
G.N. Pavlov ◽  
A.I. Marei
Keyword(s):  
High Temperature ◽  
Low Frequency ◽  
Temperature Relaxation

Sequence of dielectric anomalies and high-temperature relaxation behavior inNa1/2Bi1/2TiO3

1994 ◽  
Vol 49 (17) ◽  
pp. 11550-11559 ◽  
Author(s):  
C.-S. Tu ◽  
I. G. Siny ◽  
V. H. Schmidt
Keyword(s):  
High Temperature ◽  
Relaxation Behavior ◽  
Temperature Relaxation

scholarly journals Maxwell-Wagner Relaxations in Ca-, Sm- and Nd-doped Ceria

2021 ◽  
Author(s):  
RIDA AHMED ◽  
Shuting Wang ◽  
Sajid ur Rehman ◽  
Jie Sun ◽  
Jin Wang ◽  
...  
Keyword(s):  
High Temperature ◽  
Oxygen Vacancies ◽  
Doped Ceria ◽  
Impedance Spectra ◽  
Analysis Techniques ◽  
Dielectric Relaxations ◽  
The Past ◽  
Measurement And Analysis ◽  
Temperature Relaxation ◽  
Humidity Sensitivity

Abstract Doped ceria, i.e. Ce1-xMxO2-d with M being dopant metal, has been a focus of great attention for SOFCs due to its high oxygen conduction. In the past literature, the dielectric relaxations in these materials have been ascribed to be caused by defect associates (MCeʺ-Vö) possessing different MCeʺ and Vö distances. But we believe that with changing measurement and analysis techniques it is necessary to invest our time to re-examine the already reported materials and to again take a detailed investigation of the underlying phenomenon behind their dielectric relaxations. Thus, we have used solid-state reaction to prepare Ce1-xMxO2-δ with M=Ca, Sm, and Nd in x=0.1, 0.2, and 0.3 ratios, respectively. The as-prepared and post annealed samples were tested for dielectric properties from 300-1080 K with varying frequencies. The low-temperature relaxation (R1) was argued to be a Maxwell-Wagner relaxation caused by humidity sensitivity. The high-temperature relaxation (R2) was ascribed to be caused by hopping motion of oxygen vacancies. This fact was also supported by detailed analysis of impedance spectra. While, according to the previous reports this relaxation is because of oxygen-vacancy-dopant defect pair.

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