High detectivity squaraine-based near infrared photodetector with nA/cm2 dark current

2011 ◽  
Vol 98 (7) ◽  
pp. 073303 ◽  
Author(s):  
M. Binda ◽  
A. Iacchetti ◽  
D. Natali ◽  
L. Beverina ◽  
M. Sassi ◽  
...  
Keyword(s):  
Dark Current ◽  
Near Infrared ◽  
Infrared Photodetector

High-performance WO3−x-WSe2/SiO2/n-Si heterojunction near-infrared photodetector via a homo-doping strategy

2018 ◽  
Vol 6 (21) ◽  
pp. 5821-5829 ◽  
Author(s):  
Tianchao Guo ◽  
Cuicui Ling ◽  
Teng Zhang ◽  
Hui Li ◽  
Xiaofang Li ◽  
...  
Keyword(s):  
Barrier Height ◽  
Dark Current ◽  
High Performance ◽  
Near Infrared ◽  
Infrared Photodetector ◽  
Interface Barrier

The enhanced performance of WO3−x-WSe2/SiO2/n-Si can be mainly attributed to the down-shift of the EF of WO3−x-WSe2, which results in a larger interface barrier height and a greatly reduced dark current.

scholarly journals Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer

Nanophotonics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 1573-1579
Author(s):  
Cihyun Kim ◽  
Tae Jin Yoo ◽  
Kyoung Eun Chang ◽  
Min Gyu Kwon ◽  
Hyeon Jun Hwang ◽  
...  
Keyword(s):  
Dark Current ◽  
Interfacial Layer ◽  
Near Infrared ◽  
Schottky Junction ◽  
Infrared Photodetector ◽  
Current Ratio ◽  
Specific Detectivity

Abstract The performance of a graphene/Ge Schottky junction near-infrared photodetector is significantly enhanced by inserting a thin Al2O3 interfacial layer between graphene and Ge. Dark current is reduced by two orders of magnitudes, and the specific detectivity is improved to 1.9 × 1010 cm ⋅ Hz1/2W−1. The responsivity is improved to 1.2 AW−1 with an interfacial layer from 0.5 AW−1 of the reference devices. The normalized photo-to-dark current ratio is improved to 4.3 × 107 W−1 at a wavelength of 1550 nm, which is 10–100 times higher than those of other Ge photodetectors.

scholarly journals Ultralong free-standing single crystal perovskite microwires with extremely low dark current

2021 ◽  
Author(s):  
Xiangshun Geng ◽  
Qi-Xin Feng ◽  
He Tian ◽  
Weijian Chen ◽  
Xiaoming Wen ◽  
...  
Keyword(s):  
Single Crystal ◽  
Dark Current ◽  
Near Infrared ◽  
Carrier Lifetime ◽  
Low Loss ◽  
Free Standing ◽  
Monoclinic Crystal ◽  
Monoclinic Crystal Structure ◽  
Integrated Optical ◽  
Integrated Optical Waveguide

Abstract Super long perovskite microwires (PMWs) are in a great demand in many fields such as low-loss microcables and integrated optical waveguide. Despite decades of research into PMWs, single crystal PMWs with several centimeters long have not been obtained. Here, ultralong (up to 7.6 centimeters) monoclinic crystal structure CH3NH3PbI3·DMF PMWs have been synthesized. The high-quality microwire exhibits long carrier lifetime of 1775.7 ns. The as-prepared free-standing PMWs can be integrated to any arbitrary substrate and 808 nm near-infrared photodetectors have been successfully demonstrated. The fabricated device shows a high light on/off ratio of 1.79×106 and an extremely low dark current of 2.5 fA at 1 V bias. This work provides a strategy for the solution growth of ultralong microwires.

Passively Q-switched operation based on Sb2Se3 and self-power near infrared photodetector

2021 ◽  
pp. 118704
Author(s):  
Lijun Yu ◽  
Benhai Wang ◽  
Haobin Han ◽  
Chaoqing Dai ◽  
Wei Liu ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Photodetector

scholarly journals Rhenium Diselenide (ReSe 2 ) Near‐Infrared Photodetector: Performance Enhancement by Selective p‐Doping Technique

2019 ◽  
Vol 6 (21) ◽  
pp. 1901255 ◽  
Author(s):  
Jinok Kim ◽  
Keun Heo ◽  
Dong‐Ho Kang ◽  
Changhwan Shin ◽  
Sungjoo Lee ◽  
...  
Keyword(s):  
Near Infrared ◽  
Performance Enhancement ◽  
Infrared Photodetector ◽  
Doping Technique ◽  
Rhenium Diselenide
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