An investigation of as‐implanted material formed by high dose 40 keV oxygen implantation into silicon at 550 °C

1993 ◽  
Vol 74 (1) ◽  
pp. 82-85 ◽  
Author(s):  
Y. Li ◽  
J. A. Kilner ◽  
R. J. Chater ◽  
A. Nejim ◽  
P. L. F. Hemment ◽  
...  
Keyword(s):  
High Dose ◽  
Oxygen Implantation

An Electrical Characterization of Sol Films Using Devices Formed by Oxygen Implant and Rapid Thermal Processing

1987 ◽  
Vol 92 ◽  
Author(s):  
Jim D. Whitfield ◽  
Marie E. Burnham ◽  
Charles J. Varker ◽  
Syd.R. Wilson
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
High Energy ◽  
Thermally Grown Oxide ◽  
Silicon On Insulator ◽  
Wafer Surface ◽  
High Dose ◽  
Active Device ◽  
Insulating Layer ◽  
Oxygen Implantation

The advantages of Silicon-on-Insulator (SO) devices over bulk Silicon devices are well known (speed, radiation hardened, packing density, latch up free CMOS,). In recent years, much effort has been made to form a thin, buried insulating layer just below the active device region. Several approaches are being developed to fabricate such a buried insulating layer. One viable approach is by high dose, high energy oxygen implantation directly into the silicon wafer surface (1-3). With proper implant and annealing conditions, a thin stoichiometric buried oxide with a good crystalline quality silicon overlayer can be formed on which an epitaxial layer can be grown and functional devices and circuits built. As SO1 circuits become market viable, mass production tools and techniques are being developed and evaluated. Of particular interest here is the evaluation of high current oxygen implantation with rapid thermal processing on the electrical characteristics of the oxide-silicon interfaces, the silicon overlayer and the thermally grown oxide on the top surface using measurements on gated diodes and guarded capacitors.

Formation of buried insulating layers by high dose oxygen implantation under controlled temperature conditions

Vacuum ◽  
1985 ◽  
Vol 35 (12) ◽  
pp. 589-593 ◽  
Author(s):  
M. Bruel ◽  
J. Margail ◽  
J. Stoemenos ◽  
P. Martin ◽  
C. Jaussaud
Keyword(s):  
High Dose ◽  
Oxygen Implantation ◽  
Temperature Conditions

Characterization of the silicon‐on‐insulator material formed by high‐dose oxygen implantation using spectroscopic ellipsometry

1987 ◽  
Vol 62 (8) ◽  
pp. 3458-3461 ◽  
Author(s):  
F. Ferrieu ◽  
D. P. Vu ◽  
C. D’Anterroches ◽  
J. C. Oberlin ◽  
S. Maillet ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Silicon On Insulator ◽  
High Dose ◽  
Oxygen Implantation

Properties of SOI structures formed by high dose oxygen implantation into silicon

Vacuum ◽  
1989 ◽  
Vol 39 (2-4) ◽  
pp. 219-221 ◽  
Author(s):  
Lu Diantong ◽  
Lu Wuxing ◽  
Wang Zhonglie ◽  
Du Yongchang ◽  
Zheng Huaide ◽  
...  
Keyword(s):  
High Dose ◽  
Oxygen Implantation
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