Pulsed laser‐induced melting followed by quenching of silicon films

1993 ◽  
Vol 74 (11) ◽  
pp. 6592-6598 ◽  
Author(s):  
T. Sameshima ◽  
S. Usui
Keyword(s):  
1991 ◽  
Vol 235 ◽  
Author(s):  
T. Sameshima ◽  
S. Usui

ABSTRACTAmorphization of silicon films occurred through homogeneous solidification of molten silicon layers on quartz substrates induced by irradiation with a 30ns-XeCl excimer laser. The crystalline nucleation rate was obtained to be 8×1030m−3s−1. Silicon films were completely amorphized for films thinner than 18nm. Complete amorphizatoin is brought about by reduced grain size and reduced recalescence as the film thickness decreases. Recalescence was observed in situusing transient thermometry with a platinum-temperature-sensing layer when a 15nm-thick silicon film was amorphized.


2006 ◽  
Vol 45 (4A) ◽  
pp. 2437-2440 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Hajime Watakabe ◽  
Nobuyuki Andoh ◽  
Seiichiro Higashi

2006 ◽  
Vol 40 (4) ◽  
pp. 443-448 ◽  
Author(s):  
É. B. Kaganovich ◽  
I. P. Lisovskiĭ ◽  
É. G. Manoĭlov ◽  
S. A. Zlobjn

2004 ◽  
Vol 38 (5) ◽  
pp. 598-602 ◽  
Author(s):  
V. Ya. Bratus ◽  
S. M. Okulov ◽  
É. B. Kaganovich ◽  
I. M. Kizyak ◽  
É. G. Manoilov

1991 ◽  
Vol 30 (Part 1, No. 11A) ◽  
pp. 2664-2672 ◽  
Author(s):  
Kazuhiro Shimizu ◽  
Shigeru Imai ◽  
Osamu Sugiura ◽  
Masakiyo Matsumura

2018 ◽  
Vol 47 (9) ◽  
pp. 916005
Author(s):  
王凯 WANG Kai ◽  
李晓红 LI Xiao-hong ◽  
张延彬 ZHANG Yan-bing ◽  
温才 WEN Cai ◽  
刘德雄 LIU De-xiong

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