Interfacial solid‐phase reactions, crystallographic structures, and electrical characteristics of Hf/(001)Si systems

1993 ◽  
Vol 74 (11) ◽  
pp. 6703-6709 ◽  
Author(s):  
S. Zaima ◽  
N. Wakai ◽  
T. Yamauchi ◽  
Y. Yasuda
Keyword(s):  
Solid Phase ◽  
Electrical Characteristics ◽  
Crystallographic Structures ◽  
Solid Phase Reactions

Solid‐phase reactions and crystallographic structures in Zr/Si systems

1991 ◽  
Vol 69 (10) ◽  
pp. 7050-7056 ◽  
Author(s):  
T. Yamauchi ◽  
S. Zaima ◽  
K. Mizuno ◽  
H. Kitamura ◽  
Y. Koide ◽  
...  
Keyword(s):  
Solid Phase ◽  
Crystallographic Structures ◽  
Solid Phase Reactions

Comparison of Structural and Electrical Characteristics of Solid-Phase Epitaxial Films Recrystallized By Rapid Thermal Annealing and Furnace Annealing

1985 ◽  
Vol 53 ◽  
Author(s):  
R. Sundaresan ◽  
P.-H. Chang ◽  
S.D.S. Malhi ◽  
H.W. Lam
Keyword(s):  
Solid Phase ◽  
Epitaxial Films ◽  
Electrical Characteristics ◽  
Lateral Extension ◽  
Rapid Thermal Anneal ◽  
Furnace Annealing ◽  
Layer 4 ◽  
Polysilicon Films ◽  
Average Electron ◽  
Temperature Furnace

ABSTRACTSolid-phase epitaxial regrowth of polysilicon films. amorphized by a room-temperature silicon implant. has been achieved using a (low temperature) furnace anneal or a (high temperature) rapid thermal anneal. Lateral extension of the growth onto an oxide layer, 4 μm wide, has also been observed. The electrical properties of the films were examined by building MO2S devices in them. Average electron mobilities of 520 cm2/v-sec and 200 cm2/v-sec have been measured for films regrown on top of silicon and oxide respectively.

Solid-phase reactions limited by an energy barrier

1997 ◽  
Vol 42 (11) ◽  
pp. 1270-1274
Author(s):  
A. I. Baranov ◽  
N. I. Boyarkina ◽  
A. V. Vasil’ev
Keyword(s):  
Energy Barrier ◽  
Solid Phase ◽  
Solid Phase Reactions

Solid phase reactions between Fe thin films and Si-Ge layers on Si

2004 ◽  
Vol 461 (1) ◽  
pp. 81-85 ◽  
Author(s):  
C.H Yu ◽  
Y.L Chueh ◽  
S.W Lee ◽  
S.L Cheng ◽  
L.J Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Reactions

Thermodynamical study of (CaGa2S4)x(BaGa2S4)1−x solid solutions

2021 ◽  
pp. 2150469
Author(s):  
T. G. Naghiyev ◽  
R. M. Rzayev
Keyword(s):  
Free Energy ◽  
Solid Solutions ◽  
Calculation Method ◽  
Solid Phase ◽  
Ternary Compounds ◽  
Free Energy Of Formation ◽  
Concentration Dependences ◽  
Solid Phase Reactions ◽  
Two Phases ◽  
Energy Of Formation

The solid solutions of [Formula: see text] were synthesized by solid-phase reactions from powder components of CaS, BaS, and Ga2S3. The temperature-concentration dependences of the Gibbs free energy of formation of [Formula: see text] solid solutions from ternary compounds and phase diagrams of the CaGa2S4–BaGa2S4 were determined by a calculation method. It was revealed that continuous solid solutions are formed in these systems. The spinodal decomposition of [Formula: see text] solid solutions into two phases is predicted at ordinary temperatures.

Solid-Phase Reactions of Diffusion Barriers of Ti and TiN to Copper Layers onSiO2

1996 ◽  
Vol 35 (Part 1, No. 7) ◽  
pp. 4027-4033 ◽  
Author(s):  
Mayumi Takeyama ◽  
Atsushi Noya ◽  
Kouichirou Sakanishi ◽  
Hikaru Seki ◽  
Katsutaka Sasaki
Keyword(s):  
Solid Phase ◽  
Diffusion Barriers ◽  
Solid Phase Reactions
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