Multi-Wavelength Raman and Photoluminescence Characterization of Implanted Silicon Before and After Rapid Thermal Annealing

2011 ◽  
Author(s):  
Woo Sik Yoo ◽  
Takeshi Ueda ◽  
Toshikazu Ishigaki ◽  
Kitaek Kang ◽  
Jiro Matsuo ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Before And After ◽  
Multi Wavelength

Micro-Raman Characterization of Cluster Carbon Implanted Si before and after Rapid Thermal Annealing

2016 ◽  
Vol 75 (8) ◽  
pp. 605-613
Author(s):  
W. S. Yoo ◽  
K. Kang ◽  
H. Nishigaki ◽  
N. Hasuike ◽  
H. Harima ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Before And After ◽  
Raman Characterization

X-ray electrono-optical and SIMS characterization of Si crystals implanted with Bi ions before and after rapid thermal annealing

1995 ◽  
Vol 30 (1) ◽  
pp. 129-133 ◽  
Author(s):  
J. Auleytner ◽  
J. Adamczewska ◽  
A. Barcz ◽  
J. Górecka ◽  
K. Regiński
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray ◽  
Before And After

Characterization of Ge nanocrystals in a-SiO2 synthesized by rapid thermal annealing

1999 ◽  
Vol 144-145 ◽  
pp. 697-701 ◽  
Author(s):  
W.K Choi ◽  
S Kanakaraju ◽  
Z.X Shen ◽  
W.S Li
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ge Nanocrystals

Characterization of the TiW‐GaAs interface after rapid thermal annealing

1989 ◽  
Vol 66 (10) ◽  
pp. 4775-4779 ◽  
Author(s):  
M. de Potter ◽  
W. De Raedt ◽  
M. Van Hove ◽  
G. Zou ◽  
H. Bender ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing

Micro-Raman characterization of Ge diffusion and Si stress change in thin epitaxial Si1−xGex layers on Si(100) after rapid thermal annealing

2012 ◽  
Vol 27 (9) ◽  
pp. 1314-1323 ◽  
Author(s):  
Chun-Wei Chang ◽  
Min-Hao Hong ◽  
Wei-Fan Lee ◽  
Kuan-Ching Lee ◽  
Li-De Tseng ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Stress Change ◽  
Image Position ◽  
Raman Characterization

Abstract

Carrier loss by rapid thermal-annealing in Si-doped GaAs grown by MOCVD (metal-organic chemical vapour deposition)

1991 ◽  
Vol 69 (3-4) ◽  
pp. 353-356
Author(s):  
C. Aktik ◽  
J. F. Currie ◽  
F. Bosse ◽  
R. W. Cochrane ◽  
J. Auclair
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Deep Level ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Before And After ◽  
Metal Organic ◽  
Si Doped

Si-doped GaAs epitaxial layers grown by metal-organic chemical vapour deposition exhibit substantial carrier density loss after rapid thermal annealing (RTA) at temperatures higher than 850 °C. Hall-effect, capacitance–voltage, deep-level transient spectroscopy, and secondary ion mass spectroscopy measurements were performed on samples before and after RTA. We show that the reduction of free-carrier concentration in the entire thickness of the epitaxial layer is accompanied by the deterioration of the mobility and the enhancement of donor-like deep-level concentration at 0.305 eV below the conduction band, which is in good agreement with the model of silicon donor neutralization by formation of neutral silicon–hydrogen complexes.

DLTS Characterization of N-Type Silicon After Rapid Thermal Annealing of Boron Implantation

1985 ◽  
Vol 52 ◽  
Author(s):  
C. M. Ransom ◽  
T. O. Sedgwick ◽  
S. A. Cohen
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Diode ◽  
Electron Traps ◽  
Majority Carrier ◽  
Type Silicon ◽  
Isochronal Anneal ◽  
Boron Implantation ◽  
Carrier Traps

ABSTRACTDLTS measurements show that majority-carrier traps exist after quartz-lamp, rapid-thermal annealing (RTA) activation of B+ and BF2+ ion implants in n-type silicon. Levels at Ec-0.17, 0.27, 0.44 and 0.57 eV annealed out with an additional 20 minute isochronal anneal at 550°C in argon. A stable defect at 0.37 eV existed at temperatures above 750°C. DLTS measurements of a Schottky diode on n-type silicon after only RTA indicated that electron traps could be introduced into n-type silicon by the RTA alone.

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