Improvement of Vertical Diode Properties by N-type Plasma Doping for Low-Power Phase Change Non-Volatile Memory (NVM)

2011 ◽  
Author(s):  
Min Yong Lee ◽  
H. S. Lee ◽  
Y. J. Ki ◽  
Y. S. Sohn ◽  
H. S. Kang ◽  
...  
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Plasma Doping ◽  
Non Volatile Memory ◽  
Volatile Memory

scholarly journals Efektivitas alat tes servis bolavoli berbasis mikrokontroller

2020 ◽  
Vol 6 (2) ◽  
pp. 499-513
Author(s):  
Giartama Giartama ◽  
Destriani Destriani ◽  
Waluyo Waluyo ◽  
Muslimin Muslimin
Keyword(s):  
Low Power ◽  
High Performance ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Microcontroller Unit

Ilmu pengetahuan dengan cepat harus menyesuaikan dengan tuntutan zaman. Berbagai cabang olahraga telah menggunakan kemajuan teknologi sebagai penunjang kegiatan baik dalam pembelajaran ataupun saat latihan khususnya pada olahraga cabang permainan bolavoli. Penelitian ini bertujuan untuk menguji efektivitas alat tes servis bolavoli berbasis mikrokontroller yang terdiri dari komponen-komponen seperti high performance, low power avr® 8-bit microcontroller unit, advanced risc architecture, high endurance non-volatile memory segments, peripheral features, special microcontroller features, dan menggunakan perangkat yang lain agar dapat digunakan untuk mengukur tes servis bolavoli. Penelitian ini menggunakan metode penelitian kuantitatif. Instrumen tes yang digunakan berupa tes keterampilan servis bolavoli. Subjek dalam penelitian ini yaitu untuk kelas pemula subjek penelitian mahasiswa semester 2 yang bukan merupakan atlet bolavoli, kemudian pada mahasiswa yang ekstrakurikulernya bolavoli, dan kelompok ketiga pada mahasiswa yang termasuk pada atlet nasional dan daerah dengan jumlah subjek sebanyak 60 orang. Hasil dari penelitian ini didapatkan nilai keefektifan sebesar 99,04% dengan mengklasifikasikan subjek penelitian menjadi tiga tingkat yang berbeda. Berdasarkan hasil tersebut dapat disimpulkan bahwa alat tes servis bolavoli berbasis mikrokontroller ini efektif digunakan baik bagi pemula hingga atlet professional.

scholarly journals Low power non-volatile memory switching in monolayer-rich 2D WS2 and MoS2 devices

AIP Advances ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 025102 ◽  
Author(s):  
C. Mihai ◽  
F. Sava ◽  
A. C. Galca ◽  
A. Velea
Keyword(s):  
Low Power ◽  
Memory Switching ◽  
Non Volatile Memory ◽  
Volatile Memory

A GIDL free tunneling gate driver for a low power non-volatile memory array

2012 ◽  
Author(s):  
Hadar Dagan ◽  
Adam Teman ◽  
Alexander Fish ◽  
Evgeny Pikhay ◽  
Vladislav Dayan ◽  
...  
Keyword(s):  
Low Power ◽  
Memory Array ◽  
Non Volatile Memory ◽  
Gate Driver ◽  
Volatile Memory

Dielectric Constants and Endurance of Chalcogenide Phase-Change Non-Volatile Memory

2006 ◽  
Vol 918 ◽  
Author(s):  
Semyon D. Savransky ◽  
Eugenio F. Prokhorov
Keyword(s):  
Phase Change ◽  
Chalcogenide Glasses ◽  
Bond Distance ◽  
Memory Cell ◽  
Coulomb Repulsion ◽  
Atomic Radius ◽  
Interatomic Bond ◽  
Dielectric Constants ◽  
Non Volatile Memory ◽  
Volatile Memory

AbstractInitial attempts to create memory from chalcogenide glasses (g-Ch) had limited success particularly because the first generation of these materials (labeled as CG1) has inferior endurance (about 106 SET-RESET cycles). Recent progress in phase-change non-volatile memory (PC-RAM) related to superior properties of Ge2Sb2Te5 (GST) alloy [1,2]. The paper answers the vital for PC-RAM development question: “Why is endurance of GST memory cells (about 1011 cycles) much higher than of CG1 cells?” We show that superior endurance is related to features of –U centers [3] creation in GST during RESET of PC-RAM cells. The native –U centers exist in g-Ch due to the softness of atomic potentials [3]. They play a significant role in SET process of CG1 and GST [2,4]. The –U centers behavior in GST [5] is different compared with CG1 while other properties (threshold voltage, resistivity, etc.) are basically the same [1-4]. We found that dielectric permittivities e of CG1 and GST are also different.The e values in Ge-Sb-Te alloys films have been determined from impedance measurements in sandwich samples using method described in [6] and reported in the paper. Amorphous GST has relatively high and distinct static and optical dielectric permittivities eo=16.5 and e'=15.3 to compare with CG1 where e practically independent on frequency. Hence the second term in the effective polarization potential Ep = q^2[(1-1/e')/r + (1/e' - 1/eo)/L] is strong (here r and L are the average atomic radius and interatomic bond distance, q is the electron charge). It allows to screen the Coulomb repulsion at an –U center quite effectively in GST. Therefore polarization helps –U centers creation in amorphous GST and impedes these centers formation in crystalline hexagonal GST films where eo=38 and e'=61. In contrast to CG1 [3], the creation and destruction of –U centers during RESET and SET processes in GST [4] are not accompanied by strong plastic mechanical stresses in a memory cell. This feature (higher barrier between elastic and plastic deformations) predetermines possibility of numerous SET-RESET cycles in this alloy. Therefore, the deformation mechanism of –U centers formation in CG1 leads to inferior endurance while the polarization mechanism of their creation in GST ensures decent endurance. Second factor is hybritization of –U centers with extended states can also play role in good memory alloys. Obtained experimental e values in non-stochiometric films allow to conclude about expected endurance in the framework of the proposed model.

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