Importance of confined longitudinal optical phonons in intersubband and backward scattering in rectangular AlGaAs/GaAs quantum wires

1993 ◽  
Vol 74 (3) ◽  
pp. 2097-2099 ◽  
Author(s):  
W. Jiang ◽  
J. P. Leburton
Keyword(s):  
Quantum Wires ◽  
Longitudinal Optical ◽  
Optical Phonons

RECENT DEVELOPMENTS ON ELECTRON-PHONON INTERACTIONS IN STRUCTURES FOR ELECTRONIC AND OPTOELECTRONIC DEVICES

1998 ◽  
Vol 09 (01) ◽  
pp. 281-312 ◽  
Author(s):  
M. DUTTA ◽  
M. A. STROSCIO ◽  
K. W. KIM
Keyword(s):  
Quantum Wells ◽  
Quantum Wires ◽  
Quantum Cascade Lasers ◽  
Optoelectronic Devices ◽  
Longitudinal Optical ◽  
Optical Phonons ◽  
Phonon Modes ◽  
Cross Sectional ◽  
Device Applications ◽  
Dielectric Continuum

As device dimensions in electronic and optoelectronic devices are reduced, the characteristics and interactions of dimensionally-confined longitudinal-optical (LO) and acoustic phonons deviate substantially from those of bulk semiconductors. Furthermore, as würtzite materials are applied increasingly in electronic and optoelectronic devices it becomes more important to understand the phonon modes in such systems. This account emphasizes the properties of bulk optical phonons in würtzite structures, the properties of LO-phonon modes and acoustic-phonon modes arising in polar-semiconductor quantum wells, superlattices, quantum wires and quantum dots, with a variety of cross sectional geometries and, lastly, the properties of optical phonons in würtzite materials as predicted by the dielectric continuum model. Emphasis is placed on the dielectric continuum and elastic continuum models of bulk, confined and interface phonons. This article emphasizes device applications of confined phonons in GaAs-based systems and provides a brief discussion of carrier-LO-phonon interactions in bulk würtzite structures. This account also includes discussions on the use of metal-semiconductor heterointerfaces to reduce scattering and on the role of phonons in Fröhlich, deformation and piezoelectric interactions in electronic and optoelectronic structures; specific device applications high-lighted here include quantum cascade lasers, mesoscopic devices, thermoelectric devices and optically-pumped resonant intersubband lasers.

Photoconductivité dans l'alliage GaAsxSb1−x en présence d'un champ magnétique

1974 ◽  
Vol 52 (8) ◽  
pp. 743-747 ◽  
Author(s):  
A. Filion ◽  
E. Fortin
Keyword(s):  
Magnetic Fields ◽  
Band Gap ◽  
Effective Mass ◽  
Alloy Composition ◽  
Longitudinal Optical ◽  
Optical Phonons ◽  
Champ Magnétique

The intrinsic photoconductivity of several samples of the alloy GaAsxSb1−x has been studied at 4.2 K in the presence of magnetic fields of up to 65 kG. Values for the band-gap, the reduced effective mass of the carriers, the energy of the longitudinal optical phonons across the alloy composition are deduced from the measurements.

Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN and AlxGa1-xN

2000 ◽  
Author(s):  
Kong-Thon F. Tsen ◽  
David K. Ferry ◽  
Stephen M. Goodnick ◽  
A. Salvador ◽  
Hadis Morkoc
Keyword(s):  
Longitudinal Optical ◽  
Optical Phonons

scholarly journals Anomalous dispersion of longitudinal optical phonons in oxygen-doped La2−xSrxCuO4+δ

2020 ◽  
Vol 101 (10) ◽  
Author(s):  
Tim Tejsner ◽  
Andrea Piovano ◽  
Ana Ţuţueanu ◽  
Astrid T. Rømer ◽  
Barrett O. Wells ◽  
...  
Keyword(s):  
Longitudinal Optical ◽  
Anomalous Dispersion ◽  
Optical Phonons

Étude des surstructures de la magnétorésistance de InSb

1987 ◽  
Vol 65 (5) ◽  
pp. 468-475 ◽  
Author(s):  
J. Galibert ◽  
P. Perrier ◽  
S. Askenazy ◽  
R. A. Stradling ◽  
P. R. Wallace
Keyword(s):  
Longitudinal Optical ◽  
Landau Levels ◽  
Second Derivative ◽  
Optical Phonons ◽  
Transverse Magnetoresistance ◽  
Method Of Determination ◽  
Spin Flip ◽  
Magnetophonon Resonance

We have carried out experiments of magnetophonon resonance on n-InSb doped at 4.6 × 1013 cm−3 at a temperature of 135 K. The second derivative of longitudinal and transverse magnetoresistance exhibits obviously spin-resolved peaks of magnetophonon resonances involving one or two longitudinal optical phonons. Among these "over-structures" appear spin-flip resonances, particularly the 0−0+ resonance.The structures of the magnetoresistance are explained from the calculation of resonance fields, based on our method of determination of the Landau levels.

Free-carrier screening of the interaction between excitons and longitudinal-optical phonons inInxGa1−xAs-InP quantum wells

1987 ◽  
Vol 35 (11) ◽  
pp. 5925-5928 ◽  
Author(s):  
M. S. Skolnick ◽  
K. J. Nash ◽  
P. R. Tapster ◽  
D. J. Mowbray ◽  
S. J. Bass ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Longitudinal Optical ◽  
Carrier Screening ◽  
Free Carrier ◽  
Optical Phonons

ONE-PHONON-ASSISTED ELECTRON RESONANT RAMAN SCATTERING IN FREE-STANDING QUANTUM WIRES

2007 ◽  
Vol 21 (17) ◽  
pp. 2989-3000
Author(s):  
XIANG-FU ZHAO ◽  
CUI-HONG LIU
Keyword(s):  
Raman Scattering ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Longitudinal Optical ◽  
Phonon Modes ◽  
Free Standing ◽  
Surface Optical ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Valence Bands

The scattering intensity (SI) for an electron resonant Raman scattering (ERRS) process in a free-standing semiconductor quantum wire of cylindrical geometry associated with bulk longitudinal optical (LO) phonon modes or the surface optical (SO) phonon modes is calculated for T=0 K . The Fröhlich interaction is considered to illustrate the theory for a GaAs system. Electron states are confined within a free-standing quantum wire (FSW). Single parabolic conduction and valence bands are assumed. The selection rules are studied. Numerical results and a discussion are also presented for various radii of the cylindrical quantum wires.

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