Strain and quantum‐confinement effects on differential gain of strained InGaAsP/InP quantum well lasers

1993 ◽  
Vol 74 (6) ◽  
pp. 4242-4244 ◽  
Author(s):  
Shunji Seki ◽  
Kiyoyuki Yokoyama
1997 ◽  
Vol 478 ◽  
Author(s):  
X. Sun ◽  
M. S. Dresselhaus ◽  
K. L. Wang ◽  
M. O. Tanner

AbstractThe Si/Sil−xGex quantum well system is attractive for high temperature thermoelectric applications and for demonstration of proof-of-principle for enhanced thermoelectric figure of merit Z, since the interfaces and carrier densities can be well controlled in this system. We report here theoretical calculations for Z in this system, and results from theoretical modeling of quantum confinement effects in the presence of δ-doping within the barrier layers. The δ-doping layers are introduced by growing very thin layers of wide band gap materials within the barrier layers in order to increase the effective barrier height within the barriers and thereby reduce the barrier width necessary for the quantum confinement of carriers within the quantum well. The overall figure of merit is thereby enhanced due to the reduced barrier width and hence reduced thermal conductivity, K. The δ-doping should further reduce K in the barriers by introducing phonon scattering centers within the barrier region. The temperature dependence of Z for Si quantum wells is also discussed.


2006 ◽  
Vol 3 (10) ◽  
pp. 3496-3499 ◽  
Author(s):  
Tetsu Ito ◽  
Wataru Shichi ◽  
Shinsuke Morisada ◽  
Masao Ichida ◽  
Hideki Gotoh ◽  
...  

Author(s):  
Jianghu Liang ◽  
Zhanfei Zhang ◽  
Qi Xue ◽  
Yiting Zheng ◽  
Xueyun Wu ◽  
...  

The development of quasi-two-dimensional (2D) Ruddlesden-Popper phase perovskite solar cells (PSCs) has greatly improved the stability of devices. However, the presence of quantum confinement effects and insulating spacer cations in...


2011 ◽  
Vol 83 (24) ◽  
Author(s):  
O. Demichel ◽  
V. Calvo ◽  
P. Noé ◽  
B. Salem ◽  
P.-F. Fazzini ◽  
...  

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