Quantum confinement effects on electron spin g-factor in semiconductor quantum well structures

2006 ◽  
Vol 3 (10) ◽  
pp. 3496-3499 ◽  
Author(s):  
Tetsu Ito ◽  
Wataru Shichi ◽  
Shinsuke Morisada ◽  
Masao Ichida ◽  
Hideki Gotoh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Electron Spin ◽  
Quantum Confinement ◽  
Confinement Effects ◽  
G Factor ◽  
Quantum Well Structures ◽  
Quantum Confinement Effects ◽  
Semiconductor Quantum Well

Effect of Quantum-Well Structures on the Thermoelectric Figure of Merit in the Si/Si1-xGex System

1996 ◽  
Vol 452 ◽  
Author(s):  
X. Sun ◽  
M. S. Dresselhaus ◽  
K. L. Wang ◽  
M. O. Tanner
Keyword(s):  
Quantum Well ◽  
Quantum Confinement ◽  
Figure Of Merit ◽  
Molecular Beam ◽  
Theoretical Calculations ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Quantum Well Structures ◽  
Quantum Confinement Effects ◽  
Proof Of Principle

AbstractThe Si/Si1-xGex quantum well system is attractive for high temperature thermoelectric applications and for demonstration of proof-of-principle for enhanced thermoelectric figure of merit Z, since the interfaces and carrier densities can be well controlled in this system. We report theoretical calculations for Z in this system, based on which Si/Si1-xGex quantum-well structures were grown by molecular-beam epitaxy. Thermoelectric and other transport measurements were made, indicating that an increase in Z over bulk values is possible through quantum confinement effects in the Si/Si1-xGex quantum-well structures.

Quantum Confinement Effects on the Thermoelectric Figure of Merit in Si/Si1−xGex System

1997 ◽  
Vol 478 ◽  
Author(s):  
X. Sun ◽  
M. S. Dresselhaus ◽  
K. L. Wang ◽  
M. O. Tanner
Keyword(s):  
Quantum Well ◽  
Quantum Confinement ◽  
Figure Of Merit ◽  
Thin Layers ◽  
Thermoelectric Figure Of Merit ◽  
Barrier Width ◽  
Confinement Effects ◽  
Thermoelectric Figure ◽  
Barrier Layers ◽  
Quantum Confinement Effects

AbstractThe Si/Sil−xGex quantum well system is attractive for high temperature thermoelectric applications and for demonstration of proof-of-principle for enhanced thermoelectric figure of merit Z, since the interfaces and carrier densities can be well controlled in this system. We report here theoretical calculations for Z in this system, and results from theoretical modeling of quantum confinement effects in the presence of δ-doping within the barrier layers. The δ-doping layers are introduced by growing very thin layers of wide band gap materials within the barrier layers in order to increase the effective barrier height within the barriers and thereby reduce the barrier width necessary for the quantum confinement of carriers within the quantum well. The overall figure of merit is thereby enhanced due to the reduced barrier width and hence reduced thermal conductivity, K. The δ-doping should further reduce K in the barriers by introducing phonon scattering centers within the barrier region. The temperature dependence of Z for Si quantum wells is also discussed.

Finely Regulated Quantum Well Structure in Quasi-2D Ruddlesden-Popper Perovskite Solar Cell with an Efficiency Exceeding 20%

2021 ◽  
Author(s):  
Jianghu Liang ◽  
Zhanfei Zhang ◽  
Qi Xue ◽  
Yiting Zheng ◽  
Xueyun Wu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Quantum Well ◽  
Quantum Confinement ◽  
Perovskite Solar Cells ◽  
Perovskite Solar Cell ◽  
Two Dimensional ◽  
Confinement Effects ◽  
Quantum Confinement Effects ◽  
The Stability

The development of quasi-two-dimensional (2D) Ruddlesden-Popper phase perovskite solar cells (PSCs) has greatly improved the stability of devices. However, the presence of quantum confinement effects and insulating spacer cations in...

Quantum confinement effects and strain-induced band-gap energy shifts in core-shell Si-SiO2nanowires

2011 ◽  
Vol 83 (24) ◽  
Author(s):  
O. Demichel ◽  
V. Calvo ◽  
P. Noé ◽  
B. Salem ◽  
P.-F. Fazzini ◽  
...  
Keyword(s):  
Band Gap ◽  
Quantum Confinement ◽  
Band Gap Energy ◽  
Core Shell ◽  
Confinement Effects ◽  
Gap Energy ◽  
Quantum Confinement Effects
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