Thermal emission rate of deep localized states in amorphous arsenic triselenide

1993 ◽  
Vol 74 (8) ◽  
pp. 5064-5067 ◽  
Author(s):  
Hiroyoshi Naito ◽  
Masahiro Okuda
Keyword(s):  
Emission Rate ◽  
Thermal Emission ◽  
Localized States ◽  
Arsenic Triselenide ◽  
Thermal Emission Rate

Deep Defect Relaxation in Hydrogenated Amorphous Silicon: New Experimental Evidence and Implications

1998 ◽  
Vol 507 ◽  
Author(s):  
J. David Cohen ◽  
Fan Zhong ◽  
Daewon Kwon ◽  
C.-C. Chen
Keyword(s):  
Fermi Level ◽  
Emission Rate ◽  
Thermal Emission ◽  
Hydrogenated Amorphous Silicon ◽  
Depletion Region ◽  
Time Resolved ◽  
Apparent Shift ◽  
Hydrogenated Amorphous ◽  
Defect Relaxation ◽  
Thermal Emission Rate

ABSTRACTWe review modulated photocurrent experiments which indicate that thermal emission rate for Do defects in intrinsic samples varies in response to changes in the Fermi-level or quasi-Fermi position. This apparent shift in energy threshold is confirmed using time resolved sub-band-gap spectroscopy. We also demonstrate that such a variation of emission rate with changes in the Fermi-level position, if present within the depletion region near a barrier junction, is consistent with the details of the temperature dependence of the junction capacitance in intrinsic samples.

scholarly journals TEMPERATURE DEPENDENCE OF THERMAL EMISSION RATE IN Ce:KNSBN

1997 ◽  
Vol 46 (5) ◽  
pp. 915
Author(s):  
JI XUAN-MANG ◽  
AN YU-YING ◽  
LIU JIN-SONG
Keyword(s):  
Temperature Dependence ◽  
Emission Rate ◽  
Thermal Emission ◽  
Thermal Emission Rate

Doping-induced and photo-induced modification of electron-emission rate at localized states in P-doped a-Si:H

1983 ◽  
Vol 59-60 ◽  
pp. 437-440 ◽  
Author(s):  
H. Okushi ◽  
M. Miyakawa ◽  
T. Okuno ◽  
S. Yamasaki ◽  
Y. Tokumaru ◽  
...  
Keyword(s):  
Electron Emission ◽  
Emission Rate ◽  
Localized States

Application of Computational Intelligence to Investigation of Defect Centers in Semi-Insulating Materials by Photoinduced Transient Spectroscopy

2007 ◽  
Vol 994 ◽  
Author(s):  
Pawel Kaminski ◽  
Stanislaw Jankowski ◽  
Roman Kozlowski ◽  
Janusz Bedkowski
Keyword(s):  
Computational Intelligence ◽  
Emission Rate ◽  
Thermal Emission ◽  
Dimensional Space ◽  
Three Dimensional ◽  
Inverse Laplace Transform ◽  
Model Complexity ◽  
Support Vector ◽  
Defect Centers ◽  
Temperature Dependences

AbstractA computational intelligence algorithm has been applied to extracting trap parameters from the photocurrent relaxation waveforms recorded at the temperature range of 20-320 K for semi-insulating (SI) InP samples. Using the inverse Laplace transform procedure, the spectral surfaces, visualized in the three dimensional space as functions of temperature and emission rate, are calculated. The processes of thermal emission of charge carriers from defect centers manifest themselves as the sharp folds on the spectral surface. Using a set of Gaussian functions, the approximating surface is created and the ridgelines of the folds, giving the temperature dependences of the emission rate for the detected traps, are determined. The approximation is performed using the support vector machine (SVM) algorithm which allows for trading off between the model complexity and fitting accuracy. The new approach is exemplified by comparing the defect structure of SI InP wafers after annealing in iron phosphide and pure phosphorous atmospheres.

scholarly journals Volcanic SO<sub>2</sub> and SiF<sub>4</sub> visualization using 2-D thermal emission spectroscopy – Part 2: Wind propagation and emission rates

2013 ◽  
Vol 6 (1) ◽  
pp. 47-61 ◽  
Author(s):  
A. Krueger ◽  
W. Stremme ◽  
R. Harig ◽  
M. Grutter
Keyword(s):  
Wind Field ◽  
Emission Spectroscopy ◽  
Emission Rate ◽  
Thermal Emission ◽  
Diagnostic Tools ◽  
Volcanic Plume ◽  
Reconstruction Method ◽  
Emission Rates ◽  
Reconstruction Methods ◽  
Thermal Emission Spectroscopy

Abstract. A technique for measuring two-dimensional (2-D) plumes of volcanic gases with thermal emission spectroscopy was described in Part 1 by Stremme et al. (2012a). In that paper the instrumental aspects as well as retrieval strategies for obtaining the slant column images of SO2 and SiF4, as well as animations of particular events observed at the Popocatépetl volcano, were presented. This work focuses on the procedures for determining the propagation speed of the gases and estimating an emission rate from the given image sequences. A 2-D column density distribution of a volcanic gas, available as time-consecutive frames, provides information of a projected wind field and the average velocity at which the volcanic plume is propagating. This information is valuable since the largest uncertainties when calculating emission rates of the gases using remote sensing techniques arise from propagation velocities which are often inadequately assumed. The presented reconstruction method solves the equation of continuity as an ill-posed problem using mainly a Tikhonov-like regularisation. It is observed from the available data sets that if the main direction of propagation is perpendicular to the line-of-sight, the algorithm works well for SO2, which has the strongest signals, and also for SiF4 in some favourable cases. Due to the similarity of the algorithm used here with the reconstruction methods used for profile retrievals based on optimal estimation theory, diagnostic tools like the averaging kernels can be calculated in an analogous manner and the information can be quantified as degrees of freedom. Thus, it is shown that the combination of wind field and column distribution of the gas plume can provide the emission rate of the volcano both during day and night.

Compensating defect centres in semi-insulating 6H-SiC

2009 ◽  
Vol 17 (1) ◽  
pp. 1-7 ◽  
Author(s):  
P. Kamiński ◽  
R. Kozłowski ◽  
M. Miczuga ◽  
M. Pawłowski ◽  
M. Kozubal ◽  
...  
Keyword(s):  
Point Defects ◽  
Emission Rate ◽  
Thermal Emission ◽  
Charge Compensation ◽  
Charge Carriers ◽  
Two Dimensional ◽  
New Approach ◽  
Temperature Dependences ◽  
Transient Spectroscopy ◽  
Defect Centres

AbstractPhotoinduced transient spectroscopy (PITS) has been applied to study electronic properties of point defects associated with charge compensation in semi-insulating (SI) 6H-SiC substrates. The photocurrent relaxation waveforms were digitally recorded in a wide temperature range of 20–800 K and in order to extract the parameters of defect centres, a two-dimensional analysis of the waveforms as a function of time and temperature has been implemented. As a result, the processes of thermal emission of charge carriers from defect centres were seen on the spectral surface as the folds, whose ridgelines depicted the temperature dependences of emission rate for detected defect centres. The new approach was used to compare the defect levels in vanadium-doped and vanadium-free (undoped) SI 6H-SiC wafers.

Research on Cylindrical Launcher with Cylindrical Launch Parameters Simulation

2014 ◽  
Vol 886 ◽  
pp. 422-425 ◽  
Author(s):  
Zhu Lin Wang ◽  
Fan Sheng Kong ◽  
Hai Ping Li
Keyword(s):  
Fluid Dynamics ◽  
Numerical Simulation ◽  
Computational Fluid Dynamics ◽  
Flow Field ◽  
Emission Rate ◽  
Thermal Emission ◽  
Emission Process ◽  
Related Research ◽  
Surface Pressure Distribution ◽  
Unsteady Numerical Simulation

Cylindrical launcher is widely used on the battlefield. Characteristic is easy handling, facilitate multigang outfit, cluster launch, emission rate and better generalization and standardization, etc. This paper mainly studies the thermal emission process of a cylindrical launch, the unsteady numerical simulation of the process, using computational fluid dynamics software GAMBIT and FLUENT, and the concept of dynamic grid and updating method of a certain type of cylindrical equipment vertical thermal emission process. Through to the launcher unsteady numerical simulation of the flow field of the guide surface pressure distribution contours, which lay a foundation for the study of the structure of this type of equipment. At the same time it is for the equipment launcher applicability related research to provide the reference.

Non-Contact, No Wafer Preparation Deep Level Transient Spectroscopy (DlTS) Based on Surface Photovoltage (SPV)

1992 ◽  
Vol 261 ◽  
Author(s):  
Jacek Lagowski ◽  
Piotr Edelman ◽  
Mark Dexter
Keyword(s):  
Emission Rate ◽  
Thermal Emission ◽  
Deep Level ◽  
Surface States ◽  
Deep Level Defect ◽  
Recombination Lifetime ◽  
Experimental Implementation ◽  
Transient Spectroscopy ◽  
Rate Window ◽  
Minority Carriers

ABSTRACTThis work reports on the theoretical modeling and experimental investigation of isothermal SPV-DLTS based on the rate window concept. Experimental implementation of the technique is done using computer analysis of the SPV transients after ceasing the illumination. The transient involves two processes – a recombination of excess minority carriers and a thermal emission of carriers trapped by surface states and bulk defects. The later process is the key one for deep level defect determination.The upper limit for the measurable deep level emission rate is provided by the recombination lifetime. This limit often exceeds, by orders of magnitude, the standard 103 s−1 limit in capacitance DLTS. The sensitivity of SPV-DLTS is of the same order as that of optical capacitance DLTS.

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