Transmission electron microscopy and transmission electron diffraction structural studies of heteroepitaxial InAsySb1−ymolecular‐beam epitaxial layers

1993 ◽  
Vol 73 (12) ◽  
pp. 8227-8236 ◽  
Author(s):  
Tae‐Yeon Seong ◽  
A. G. Norman ◽  
I. T. Ferguson ◽  
G. R. Booker
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Epitaxial Layers ◽  
Structural Studies ◽  
Transmission Electron Diffraction ◽  
Transmission Electron

Laser-Induced Oxidation and Crystallization of Thin Amorphous Sputtered Cr Films

1983 ◽  
Vol 29 ◽  
Author(s):  
M. I. Birjega ◽  
C. A. Constantin ◽  
M. Dinescu ◽  
I. Th. Florescu ◽  
I. N. Mihailescu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Laser Irradiation ◽  
Dwell Time ◽  
Free Standing ◽  
Transmission Electron Diffraction ◽  
Oxidation Processes ◽  
Transmission Electron ◽  
Power Densities

ABSTRACTThe crystallization and oxidation processes of thin, free-standing (FS), sputtered Cr films under the action of cw CO2 laser irradiation were studied by transmission electron microscopy (TEM) and transmission electron diffraction (TED). The crystallization is induced at power densities above 28.65 W cm−2, dwell time of 1 s, and the oxidation at power densities of 48.1 W cm−2 and longer dwell times.

In-Situ Transmission Electron Microscopy Studies of the Oxidation of Si (111) 7X7

1989 ◽  
Vol 159 ◽  
Author(s):  
J.M. Gibson
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
Electron Diffraction ◽  
High Energy ◽  
Energy Transmission ◽  
Transmission Electron Diffraction ◽  
Transmission Electron

ABSTRACTThe kinematical approximation is valid for High-Energy Transmission Electron Diffraction from monolayers in planview. We use this fact to study quantitatively the attack of Si (111) 7×7 by 02. Oxygen is found to bind in the bridging position of the adatom backbonds and render the structure very stable during subsequent 02 exposure. Electron-beam exposure during dosing additionally creates rapid disordering which is presumed to represent SiOx formation.

TEM and TED Studies of Ordering in GaInP

1987 ◽  
Vol 102 ◽  
Author(s):  
J. P. Coral ◽  
M. M. Al-Jassim ◽  
J. N. Olson ◽  
A. Kibbler
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Long Range ◽  
Transmission Electron Diffraction ◽  
Transmission Electron

ABSTRACTTransmission electron microscopy (TEM) and transmission electron diffraction (TED) studies have shown the presence of long range CuPt-type cationic ordering 4n GaInP grown by MOCVD on (001) GaAs. Domains regions (on order of 104nm2) exhibit a double periodicity along the [111] and [110] directions.

Characterization of submicrometer fluid Inclusions in minerals by Analytical/Transmission Electron Microscopy and electron diffraction

1990 ◽  
Vol 48 (4) ◽  
pp. 424-424
Author(s):  
George Guthrie ◽  
David Veblen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Light Microscopy ◽  
Fluid Inclusions ◽  
Energy Dispersive Spectrometer ◽  
Analytical Transmission Electron Microscopy ◽  
Transmission Electron

The nature of a geologic fluid can often be inferred from fluid-filled cavities (generally <100 μm in size) that are trapped during the growth of a mineral. A variety of techniques enables the fluids and daughter crystals (any solid precipitated from the trapped fluid) to be identified from cavities greater than a few micrometers. Many minerals, however, contain fluid inclusions smaller than a micrometer. Though inclusions this small are difficult or impossible to study by conventional techniques, they are ideally suited for study by analytical/ transmission electron microscopy (A/TEM) and electron diffraction. We have used this technique to study fluid inclusions and daughter crystals in diamond and feldspar.Inclusion-rich samples of diamond and feldspar were ion-thinned to electron transparency and examined with a Philips 420T electron microscope (120 keV) equipped with an EDAX beryllium-windowed energy dispersive spectrometer. Thin edges of the sample were perforated in areas that appeared in light microscopy to be populated densely with inclusions. In a few cases, the perforations were bound polygonal sides to which crystals (structurally and compositionally different from the host mineral) were attached (Figure 1).

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

Identification of Growth Induced Planar Defects in Silicon

1985 ◽  
Vol 62 ◽  
Author(s):  
H. P. Strunk ◽  
A. Kessler ◽  
E. Bauser
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Crystal Growth ◽  
Epitaxial Layers ◽  
Growth Interface ◽  
Fringe Contrast ◽  
Planar Defects ◽  
Transmission Electron ◽  
Contrast Analysis ◽  
Preferential Incorporation

ABSTRACTPlanar defects have been detected by transmission electron microscopy in silicon epitaxial layers that have been grown from Ga solutions below 500 °C. According to fringe contrast analysis, this defect can be modelled by a plane of Ga atoms within the Si lattice. This plane forms during crystal growth due to local preferential incorporation of Ga atoms at crystallographically defined sites, that occur repetitively in the trains of monomolecular growth steps at the liquid/solid growth interface.

Structural transformation of a kaolinite and calcite mixture to gehlenite and anorthite

2003 ◽  
Vol 18 (2) ◽  
pp. 475-481 ◽  
Author(s):  
Karfa Traoré ◽  
Philippe Blanchart
Keyword(s):  
Electron Microscopy ◽  
Phase Diagram ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Low Temperature ◽  
Orientation Relationship ◽  
Interlayer Spacing ◽  
Direct Transition ◽  
Transmission Electron ◽  
Successive Phase

Kaolinite mixed with calcite was sintered at low temperature (1100 °C; 5 °C/min). The successive phase transformations are metakaolinite to gehlenite and then anorthite, although the available phase diagram indicates a direct anorthite recrystallization. Transmission electron microscopy and electron diffraction studies of nanocrystallites revealed that the transformation path is favored by the structural similarities of phases. In particular, the pseudolayers of gehlenite have a major orientation relationship with the initial metakaolinite layers. The gehlenite axis, [001]G, is parallel to the metakaolinite axis, [001]A. This direct transition is favored by the existence of Si tetrahedral units and 4–fold–coordinated Al in both structures. Ca atoms, initially in the interlayer spacing of metakaolinite, remain in the interlayers of gehlenite. During the second transformation step, anorthite recrystallizes from gehlenite with axis [020]A parallel to [210]G. It is proposed that this orientation relationship is favored by the orientation and shape of Ca-atom channels through both structures, along [001]G and [100]A axes.

Models of Magnesium Oxide (111) Surface Reconstructions Obtained from Direct Phasing of Transmission Electron Diffraction Data

1997 ◽  
Vol 3 (S2) ◽  
pp. 1039-1040
Author(s):  
R. Plass ◽  
K. Egan ◽  
C. Collazo-Davila ◽  
D. Grozea ◽  
E. Landree ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Electron Diffraction ◽  
Electron Diffraction Data ◽  
Vacuum Furnace ◽  
Transmission Electron Diffraction ◽  
Transmission Electron ◽  
Surface Reconstructions ◽  
Reflection Electron Microscopy ◽  
Plane Disk ◽  
Flowing Oxygen

It has long been thought that (111) surfaces of rock salt oxides microfacet to neutral surfaces upon annealing because of the very large energies involved in bulk terminating a layer of like ions. However in a recent reflection electron microscopy (REM) study Gajdardziska-Josifovska et al. found that MgO(lll) surfaces annealed in flowing oxygen furnaces at 1500°C not only did not microfacet, but displayed a √3×√3R30° surface periodicity that was stable in air. To determine the structure of this unusually stable surface MgO (111) transmission electron microscopy (TEM) samples were annealed in a vacuum furnace in the present study and their transmission electron diffraction (TED) patterns were analyzed with direct phasing methods.The TEM samples were prepared by orienting a MgO single crystal and sawing lmm wafers along a (111) plane. Disk samples were then ultrasonically drilled, dimpled, mechanically polished and/or hot nitric acid etched, and milled with 5 KeV Ar+ ions.

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