Different longitudinal optical—transverse optical mode amplification in tip enhanced Raman spectroscopy of GaAs(001)

2010 ◽  
Vol 97 (26) ◽  
pp. 263104 ◽  
Author(s):  
Pietro Giuseppe Gucciardi ◽  
Jean-Christophe Valmalette
Keyword(s):  
Raman Spectroscopy ◽  
Longitudinal Optical ◽  
Transverse Optical ◽  
Optical Mode ◽  
Tip Enhanced Raman Spectroscopy

Nondestructive Characterizations of Au-Catalyzed GaAs Nanowires on GaAs(111)B Substrates via Identifications of 1st Order Optical Phonon Modes Using μ-Raman Spectroscopy

2020 ◽  
Vol 20 (7) ◽  
pp. 4358-4363
Author(s):  
Jeung Hun Park ◽  
Richard S. Kim ◽  
Se-Jeong Park ◽  
Gye-Choon Park ◽  
Choong-Heui Chung
Keyword(s):  
Raman Spectroscopy ◽  
Dose Rate ◽  
Raman Spectra ◽  
Optical Phonon ◽  
Longitudinal Optical ◽  
Transverse Optical ◽  
Longitudinal Optical Phonon ◽  
Phonon Modes ◽  
Gaas Nanowires ◽  
Beam Dose

We report the relation between the catalyst patterning conditions and the intensity of the 1st order Raman active modes in Au-catalyzed GaAs nanowire bundles. We fabricated e-beam lithographically Au-patterned GaAs(111)B substrates by varying the patterning conditions (e-beam dose rate, dot-size and interdot-spacings), and grew GaAs nanowires via vapor–liquid–solid process using a solid-source molecular beam epitaxy. To understand the effects of the substrate preparation conditions and resulting morphologies on the optical characteristics of 1st order transverse optical and longitudinal optical phonon modes of GaAs, we characterized the nanowire bundles using complementary μ-Raman spectroscopy and scanning electron microscopy as a function of the e-beam dose rate (145–595 μC/cm2), inter-dot spacing (100 and 150 nm) and pattern size (100 and 150 nm). Ensembles of single crystalline GaAs nanowires covered with different Au-thickness exhibit a downshift and asymmetric broadening of the 1st order transverse optical and longitudinal optical phonon peaks relative to GaAs bulk modes. We also showed that the sensitivity of a downshift and broadening of Raman spectra are directly related to morphological and surface coverage variations in as-grown nanowires. We observed clear increases of the transverse optical and longitudinal optical intensity as well as the relatively higher peak shift and broadening of Raman spectra from the 100 nm patterning in response to the dose rate change. Strong dependence of Raman spectra of the nanowire bundles on the e-beam dose rate changes are attributed to the variations in spatial density, size, shape and random growth orientation of the wires. We have shown that the identification of the changes in GaAs longitudinal optical and Arsenic anti-site peaks is good indicators to characterize the quality of as-grown GaAs nanowires. Our finding confirms the utilization of Raman spectroscopy as a powerful tool for characterizing chemical, structural, and morphological information of as-grown nanowires within the supporting substrate.

OBSERVATION OF PRETRANSITIONAL EFFECTS ON THE SHAPE OF THE E2 (17 cm-1 ) OPTICAL MODE IN β-Ag1 BY RAMAN SPECTROSCOPY

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-776-C6-778
Author(s):  
E. Cazzanelli ◽  
A. Fontana ◽  
G. Mariotto ◽  
F. Rocca ◽  
M. P. Fontana
Keyword(s):  
Raman Spectroscopy ◽  
Optical Mode

Surface-and tip-enhanced Raman spectroscopy of silicon

2008 ◽  
Author(s):  
K. J. Yi ◽  
X. N. He ◽  
W. Q. Yang ◽  
Y. S. Zhou ◽  
W. Xiong ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Tip Enhanced Raman Spectroscopy

Capability of tip-enhanced Raman spectroscopy about nanoscale analysis of strained silicon for semiconductor devices production

2017 ◽  
Vol 110 (10) ◽  
pp. 103105 ◽  
Author(s):  
Arianna Lucia ◽  
Onofrio Antonino Cacioppo ◽  
Enrico Iulianella ◽  
Luca Latessa ◽  
Giuseppe Moccia ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Semiconductor Devices ◽  
Strained Silicon ◽  
Tip Enhanced Raman Spectroscopy

Recent Advances in Tip-Enhanced Raman Spectroscopy

2014 ◽  
Vol 5 (18) ◽  
pp. 3125-3130 ◽  
Author(s):  
Matthew D. Sonntag ◽  
Eric A. Pozzi ◽  
Nan Jiang ◽  
Mark C. Hersam ◽  
Richard P. Van Duyne
Keyword(s):  
Raman Spectroscopy ◽  
Recent Advances ◽  
Tip Enhanced Raman Spectroscopy

scholarly journals Fabrication of highly uniform nanoprobe via the automated process for tip-enhanced Raman spectroscopy

Nanophotonics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 2989-2996
Author(s):  
Dong Hyeon Kim ◽  
Chanwoo Lee ◽  
Byeong Geun Jeong ◽  
Sung Hyuk Kim ◽  
Mun Seok Jeong
Keyword(s):  
Raman Spectroscopy ◽  
Human Error ◽  
Acidic Solution ◽  
High Spatial Resolution ◽  
Electrochemical Etching ◽  
Radius Of Curvature ◽  
Enhanced Raman Scattering ◽  
Tip Enhanced Raman Spectroscopy ◽  
Highly Uniform ◽  
Etching System

AbstractIn a tip-enhanced Raman spectroscopy (TERS) system, using a sharp nanotip that comprises a noble metal is critical to attaining high spatial resolution and highly enhanced Raman scattering. A strongly acidic solution is typically used to fabricate gold nanotips in a quick and reliable manner. However, using an acidic solution could corrode the etching system, thereby posing hazardous problems. Therefore, both the corrosion of the etching system and human error induced by the conventional method considerably decrease the quality and reproducibility of the tip. In this study, we significantly increased the reproducibility of tip fabrication by automating the electrochemical etching system. In addition, we optimized the etching conditions for an etchant that comprised a KCl solution to which ethanol was added to overcome the limitations of the acidic etchant. The automated etching system significantly increases the yield rate of tip-fabrication reproducibility from 65 to 95%. The standard deviation of the radius of curvature decreased to 7.3 nm with an average radius of curvature of 30 nm. Accordingly, the automated electrochemical etching system might improve the efficiency of TERS.

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