A surface kinetics model for the growth of Si1−xGexfilms from SiH4/GeH4mixtures

1993 ◽  
Vol 73 (7) ◽  
pp. 3525-3530 ◽  
Author(s):  
N. M. Russell ◽  
W. G. Breiland
Keyword(s):  
Kinetics Model ◽  
Surface Kinetics

A surface kinetics model for the growth of Si1−xGex by UHV/CVD using SiH4/GeH4

2000 ◽  
Vol 218 (2-4) ◽  
pp. 245-249 ◽  
Author(s):  
Yu Zhuo ◽  
Li Daizong ◽  
Cheng Buwen ◽  
Huang Changjun ◽  
Lei Zhenlin ◽  
...  
Keyword(s):  
Kinetics Model ◽  
Surface Kinetics

A surface kinetics model for plasma etching

1980 ◽  
Author(s):  
L. Mei ◽  
S. Chen ◽  
R.W. Dutton
Keyword(s):  
Plasma Etching ◽  
Kinetics Model ◽  
Surface Kinetics

Surface Kinetics Model for SiLK Chemical Mechanical Polishing

2002 ◽  
Vol 149 (2) ◽  
pp. G118 ◽  
Author(s):  
Christopher L. Borst ◽  
Dipto G. Thakurta ◽  
William N. Gill ◽  
Ronald J. Gutmann
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Kinetics Model ◽  
Surface Kinetics

A Gas‐Phase and Surface Kinetics Model for Silicon Epitaxial Growth with SiH2Cl2 in an RTCVD Reactor

1995 ◽  
Vol 142 (1) ◽  
pp. 259-266 ◽  
Author(s):  
M. Hierlemann ◽  
A. Kersch ◽  
C. Werner ◽  
H. Schäfer
Keyword(s):  
Epitaxial Growth ◽  
Gas Phase ◽  
Kinetics Model ◽  
Surface Kinetics

Atomistic Simulation Study of Controlled Nanostructure Patterning

2003 ◽  
Vol 775 ◽  
Author(s):  
Byeongchan Lee ◽  
Kyeongjae Cho
Keyword(s):  
Diffusion Barrier ◽  
Atomistic Simulation ◽  
Degrees Of Freedom ◽  
Embedded Atom Method ◽  
Surface Kinetics ◽  
Bulk Properties ◽  
Embedded Atom ◽  
Kinetics Of ◽  
Dissociation Barrier ◽  
Strain Dependent

AbstractWe investigate the surface kinetics of Pt using the extended embedded-atom method, an extension of the embedded-atom method with additional degrees of freedom to include the nonbulk data from lower-coordinated systems as well as the bulk properties. The surface energies of the clean Pt (111) and Pt (100) surfaces are found to be 0.13 eV and 0.147 eV respectively, in excellent agreement with experiment. The Pt on Pt (111) adatom diffusion barrier is found to be 0.38 eV and predicted to be strongly strain-dependent, indicating that, in the compressive domain, adatoms are unstable and the diffusion barrier is lower; the nucleation occurs in the tensile domain. In addition, the dissociation barrier from the dimer configuration is found to be 0.82 eV. Therefore, we expect that atoms, once coalesced, are unlikely to dissociate into single adatoms. This essentially tells that by changing the applied strain, we can control the patterning of nanostructures on the metal surface.

scholarly journals A new kinetics model to predict the growth of micro-algae subjected to fluctuating availability of light

2021 ◽  
Vol 58 ◽  
pp. 102362
Author(s):  
Emna Krichen ◽  
Alain Rapaport ◽  
Emilie Le Floc'h ◽  
Eric Fouilland
Keyword(s):  
Kinetics Model
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