The vibrational modes of silicon acceptors inp‐type GaAs grown by molecular beam epitaxy on a (111)Aplane

1993 ◽  
Vol 73 (7) ◽  
pp. 3574-3576 ◽  
Author(s):  
M. J. Ashwin ◽  
M. R. Fahy ◽  
R. C. Newman
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Vibrational Modes

Local vibrational modes of H complexes in Mg-doped GaN grown by molecular beam epitaxy

2004 ◽  
Vol 84 (6) ◽  
pp. 897-899 ◽  
Author(s):  
R. Cuscó ◽  
L. Artús ◽  
D. Pastor ◽  
F. B. Naranjo ◽  
E. Calleja
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Vibrational Modes ◽  
Local Vibrational Modes ◽  
Mg Doped

scholarly journals Influence of Doping on the Lattice Dynamics of Gallium Nitride

1999 ◽  
Vol 4 (S1) ◽  
pp. 327-332 ◽  
Author(s):  
A. Kaschner ◽  
H. Siegle ◽  
A. Hoffmann ◽  
C. Thomsen ◽  
U. Birkle ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Lattice Dynamics ◽  
Molecular Beam ◽  
High Energy ◽  
Host Lattice ◽  
Free Carrier ◽  
Vibrational Modes ◽  
Local Vibrational Modes ◽  
Secondary Ion ◽  
Mg Doped

We present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, grown by molecular beam epitaxy (MBE). The influence of the different dopants on strain and free-carrier concentration was investigated. Furthermore, we report on several local vibrational modes (LVM) around 2200 cm−1 in Raman spectra of highly Mg-doped GaN. A possible explanation of these high-energy modes in terms of hydrogen-related vibrations is given. We also found a variety of new structures in the range of the GaN host lattice phonons. Secondary ion mass spectroscopy (SIMS) was applied to determine the concentration of magnesium and unintentionally incorporated hydrogen.

Hydrogen-related local vibrational modes in GaN:Mg grown by molecular beam epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
D. Pastor ◽  
R. Cuscó ◽  
L. Artus ◽  
F. Naranjo ◽  
E. Calleja
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Vibrational Modes ◽  
High Concentration ◽  
Local Modes ◽  
Metal Organic ◽  
Scattering Study ◽  
Local Vibrational Modes

ABSTRACTWe report a Raman scattering study of local vibrational modes (LVMs) on Mg-doped GaN grown by molecular beam epitaxy (MBE). Besides Mg:Ga local vibrational modes clearly observed at 262 and 565 cm−1, several peaks were detected in the spectral regions around 2200 cm−1 and 2900 cm−1. The modes in the 2200 cm−1 spectral region correspond to local modes of hydrogen complexes and hydrogen-decorated defects, and indicate the presence of a fairly high concentration of H in the samples. The peaks observed in the 2900 cm−1 region are assigned to carbon-hydrogen local modes and are indicative of the presence of C impurities in the samples. These measurements show that both C and H impurities may be present in sizable amounts not only in metal-organic chemical vapor deposition (MOCVD) samples but also in MBE grown samples, and this may have an effect on the electrical conductivity ofp-type GaN:Mg samples.

Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy

1999 ◽  
Vol 74 (22) ◽  
pp. 3281-3283 ◽  
Author(s):  
A. Kaschner ◽  
H. Siegle ◽  
G. Kaczmarczyk ◽  
M. Straßburg ◽  
A. Hoffmann ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Vibrational Modes ◽  
Local Vibrational Modes ◽  
Mg Doped

scholarly journals Influence of Doping on the Lattice Dynamics of Gallium Nitride

1998 ◽  
Vol 537 ◽  
Author(s):  
A. Kaschner ◽  
H. Siegle ◽  
A. Hoffmann ◽  
C. Thomsen ◽  
U. Birkle ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Lattice Dynamics ◽  
Molecular Beam ◽  
High Energy ◽  
Host Lattice ◽  
Free Carrier ◽  
Vibrational Modes ◽  
Local Vibrational Modes ◽  
Secondary Ion ◽  
Mg Doped

AbstractWe present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, grown by molecular beam epitaxy (MBE). The influence of the different dopants on strain and free-carrier concentration was investigated. Furthermore, we report on several local vibrational modes (LVM) around 2200 cm-1 in Raman spectra of highly Mg-doped GaN. A possible explanation of these high-energy modes in terms of hydrogen-related vibrations is given. We also found a variety of new structures in the range of the GaN host lattice phonons. Secondary ion mass spectroscopy (SIMS) was applied to determine the concentration of magnesium and unintentionally incorporated hydrogen.

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

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