Raman scattering from vibrational modes in metalorganic molecular beam epitaxy grown carbon doped InP: spectroscopic search for the carbon donor

1995 ◽  
Vol 67 (5) ◽  
pp. 647-649 ◽  
Author(s):  
M. Ramsteiner ◽  
P. Kleinert ◽  
K. H. Ploog ◽  
J. Oh ◽  
M. Konagai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Raman Scattering ◽  
Molecular Beam ◽  
Vibrational Modes ◽  
Carbon Doped ◽  
Metalorganic Molecular Beam Epitaxy

P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy

1991 ◽  
Vol 30 (Part 2, No. 9B) ◽  
pp. L1609-L1611 ◽  
Author(s):  
Jun-ichi Shirakashi ◽  
Takumi Yamada ◽  
Ming Qi ◽  
Shinji Nozaki ◽  
Kiyoshi Takahashi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type

Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy

1991 ◽  
Vol 30 (Part 2, No. 5A) ◽  
pp. L875-L875 ◽  
Author(s):  
Takeshi Akatsuka ◽  
Ryuji Miyake ◽  
Shinji Nozaki ◽  
Takumi Yamada ◽  
Makoto Konagai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type

Raman Scattering by Lo Pronon-Plasmon Coupled Mode in Heavily Carbon Doped P-Type InGsAs

1993 ◽  
Vol 325 ◽  
Author(s):  
Ming Qi ◽  
Jinsheng Luo ◽  
Junichi Shirakashi ◽  
Eisuke Tokumitsu ◽  
Shinji Nozaki ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Dominant Role ◽  
Peak Position ◽  
Carbon Doped ◽  
Coupled Mode ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type ◽  
Doping Case

AbstractThe Raman scattering from LO phonon–plasmon coupled (LOPC) mode in heavily carbon doped p–type InxGa1–xAs grown by metalorganic molecular beam epitaxy (MOMBE) was studied experimentally. Only one LOPC mode appears between the GaAs–like and InAs–like LO modes was observed. The peak position of the LOPC mode is near the GaAs–like TO mode frequency, and is not sensitive to the hole concentration. The intensity of the mode increases with increasing the carrier concentration while the two LO modes decrease and become unvisible under the higher doping level. The hole concentration dependence of the linewidth and intensity of the LOPC mode is very similar to that in p–type GaAs. It was shown that the plasmon damping effect plays a dominant role in the p–type doping case.

Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)

1992 ◽  
Vol 31 (Part 2, No. 3B) ◽  
pp. L296-L298 ◽  
Author(s):  
Isao Fujimoto ◽  
Shiro Nishine ◽  
Takumi Yamada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Structural Aspects
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