Band edge optical absorption in intrinsic silicon: Assessment of the indirect transition and disorder models

1993 ◽  
Vol 73 (8) ◽  
pp. 3988-3996 ◽  
Author(s):  
Richard Corkish ◽  
Martin A. Green
Keyword(s):  
Optical Absorption ◽  
Band Edge ◽  
Indirect Transition

Optical absorption spectra near the fundamental band edge in Cu2In4Se7 bulk crystals

2003 ◽  
Vol 93 (11) ◽  
pp. 8939-8944 ◽  
Author(s):  
C. Rincón ◽  
S. M. Wasim ◽  
G. Marı́n ◽  
G. Sánchez Pérez
Keyword(s):  
Optical Absorption ◽  
Absorption Spectra ◽  
Band Edge ◽  
Optical Absorption Spectra ◽  
Bulk Crystals ◽  
Fundamental Band

Optical absorption band edge of single crystal β-GeSe2

1985 ◽  
Vol 110 (7-8) ◽  
pp. 426-428 ◽  
Author(s):  
Zoran V. Popović ◽  
A. Breitschwerdt
Keyword(s):  
Absorption Band ◽  
Optical Absorption ◽  
Single Crystal ◽  
Band Edge ◽  
Absorption Band Edge ◽  
Optical Absorption Band

Optical absorption band edge in single-crystal GeS

1975 ◽  
Vol 17 (3) ◽  
pp. 355-359 ◽  
Author(s):  
J.D. Wiley ◽  
A. Breitschwerdt ◽  
E. Schönherr
Keyword(s):  
Absorption Band ◽  
Optical Absorption ◽  
Single Crystal ◽  
Band Edge ◽  
Absorption Band Edge ◽  
Optical Absorption Band

Optical Absorption of Doped and Undoped Bulk SiC

2000 ◽  
Vol 640 ◽  
Author(s):  
K. Miller ◽  
Q. Zhou ◽  
J. Chen ◽  
M. O. Manasreh ◽  
Z. C. Feng ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Optical Absorption ◽  
Band Gap ◽  
Absorption Spectra ◽  
Spectral Region ◽  
Sharp Peak ◽  
Band Edge ◽  
Optical Absorption Spectra ◽  
Bulk Silicon ◽  
Free Carriers

ABSTRACTOptical absorption spectra of undoped, n-type, and semi-insulating 6H and 4H bulk silicon carbide (SiC) were obtained in the spectral region of 200 – 3200 nm (6.20 – 0.3875 eV). Several features were observed in the absorption spectra collected for various samples. A sharp peak below the band gap was observed in 4H SiC. The intensity of this peak was observed to increase in samples that exhibit larger absorption due to free carriers, which leads us to conclude that the defect responsible for this peak is also the source of the free carriers in the materials. Additionally, a series of optical absorption peaks separated by approximately 21 meV were observed around 0.9185 eV (1350 nm). These peaks are zero phonon lines of intraband transitions in the VSi 3d shell. The optical absorption near the band edge was observed to be sample dependent. The variation of the band gap as a function of temperature is also observed to be sample dependent.

THE ELECTRICAL AND OPTICAL PROPERTIES OF V2O5-TeO2 GLASSES CONTAINING LEAD OXIDE

1992 ◽  
Vol 06 (08) ◽  
pp. 1219-1227
Author(s):  
AHMED M. AL-SAIE
Keyword(s):  
Optical Absorption ◽  
Lead Oxide ◽  
Lead Concentration ◽  
Glass Composition ◽  
Transmission Band ◽  
Transmission Spectra ◽  
Tellurite Glasses ◽  
Infrared Transmission ◽  
Indirect Transition ◽  
Electrical And Optical Properties

The electrical conductivity, density optical absorption and infrared transmission spectra of vanadium tellurite glasses are studied as a function of lead content. It is found that the activation energy of the conductivity increases with the increase of lead concentration. The optical observation is a function of glass composition and the optical absorption is due to indirect transition in K-space. The infrared transmission spectra of these glasses show that the addition of lead does not introduce any absorption band and the main transmission band in V2O5-TeO2-PbO glasses are related to those characteristics of the TeO 2 component.

Near band edge optical absorption and photoluminescence dynamics in bulk InAsN dilute-nitride materials

2010 ◽  
Vol 312 (19) ◽  
pp. 2705-2709 ◽  
Author(s):  
D. Wang ◽  
S.P. Svensson ◽  
L. Shterengas ◽  
G. Belenky
Keyword(s):  
Optical Absorption ◽  
Band Edge ◽  
Near Band Edge ◽  
Dilute Nitride
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