Method for reduction in surface generation current in polycrystalline‐silicon‐gate metal‐oxide‐semiconductor devices

Yea‐Dean Sheu; Gilbert A. Hawkins

doi:10.1063/1.352768

Method for reduction in surface generation current in polycrystalline‐silicon‐gate metal‐oxide‐semiconductor devices

Journal of Applied Physics ◽

10.1063/1.352768 ◽

1993 ◽

Vol 73 (9) ◽

pp. 4694-4696 ◽

Cited By ~ 3

Author(s):

Yea‐Dean Sheu ◽

Gilbert A. Hawkins

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Surface Generation

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The effect of thermal processing on polycrystalline silicon/SiO2/6H–SiC metal‐oxide‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.115868 ◽

1996 ◽

Vol 68 (16) ◽

pp. 2231-2233 ◽

Cited By ~ 23

Author(s):

W. Xie ◽

J. N. Shenoy ◽

S. T. Sheppard ◽

M. R. Melloch ◽

J. A. Cooper

Keyword(s):

Metal Oxide ◽

Thermal Processing ◽

Polycrystalline Silicon ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices

Applied Physics Letters ◽

10.1063/1.123060 ◽

1999 ◽

Vol 74 (3) ◽

pp. 457-459 ◽

Cited By ~ 183

Author(s):

Leonard F. Register ◽

Elyse Rosenbaum ◽

Kevin Yang

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Semiconductor Devices ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Analytic Model ◽

Direct Tunneling ◽

Direct Tunneling Current

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Novel Laser Annealing Process for Advanced Complementary Metal Oxide Semiconductor Devices with Suppressed Polycrystalline Silicon Gate Depletion and Ultra shallow Junctions

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1841 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 1841-1847 ◽

Cited By ~ 3

Author(s):

Akio Shima ◽

Toshiyuki Mine ◽

Kazuyoshi Torii

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Laser Annealing ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Annealing Process ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Junctions ◽

Ultra Shallow Junctions

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Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Engineering

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Cited By ~ 16

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

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Exploratory observations of post‐breakdown conduction in polycrystalline‐silicon and metal‐gated thin‐oxide metal‐oxide‐semiconductor capacitors

Journal of Applied Physics ◽

10.1063/1.353884 ◽

1993 ◽

Vol 73 (1) ◽

pp. 205-215 ◽

Cited By ~ 82

Author(s):

M. Nafría ◽

J. Sun̄é ◽

X. Aymerich

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Oxide

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Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

Current Applied Physics ◽

10.1016/j.cap.2012.04.025 ◽

2012 ◽

Vol 12 ◽

pp. S10-S19 ◽

Cited By ~ 10

Author(s):

Heiji Watanabe ◽

Katsuhiro Kutsuki ◽

Atsushi Kasuya ◽

Iori Hideshima ◽

Gaku Okamoto ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Plasma Nitridation

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Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor devices

Journal of Semiconductors ◽

10.1088/1674-4926/32/7/076001 ◽

2011 ◽

Vol 32 (7) ◽

pp. 076001 ◽

Cited By ~ 2

Author(s):

Yongliang Li ◽

Qiuxia Xu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Dry Etching ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack

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Fromab initioproperties of the Si-SiO2interface, to electrical characteristics of metal-oxide-semiconductor devices

Journal of Physics Conference Series ◽

10.1088/1742-6596/242/1/012010 ◽

2010 ◽

Vol 242 ◽

pp. 012010 ◽

Cited By ~ 1

Author(s):

S Markov ◽

P Sushko ◽

C Fiegna ◽

E Sangiorgi ◽

A Shluger ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Studies of interface states of silicon metal-oxide-semiconductor devices by dynamic conductance and noise measurements and effects of bias-temperature stresses

Thin Solid Films ◽

10.1016/0040-6090(82)90138-9 ◽

1982 ◽

Vol 93 (3-4) ◽

pp. 321-330 ◽

Cited By ~ 4

Author(s):

K.L. Ngai ◽

S.T. Liu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Stresses ◽

Noise Measurements ◽

Dynamic Conductance

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