Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films
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2014 ◽
Vol 320
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pp. 634-642
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2007 ◽
Vol 10
(9)
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pp. H267
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2009 ◽
Vol 514
(1)
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pp. 99/[429]-108/[438]
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