Investigation of electrical shading effects in back-contacted back-junction silicon solar cells using the two-dimensional charge collection probability and the reciprocity theorem

2011 ◽  
Vol 109 (2) ◽  
pp. 024507 ◽  
Author(s):  
C. Reichel ◽  
F. Granek ◽  
M. Hermle ◽  
S. W. Glunz
Keyword(s):  
Solar Cells ◽  
Reciprocity Theorem ◽  
Charge Collection ◽  
Silicon Solar Cells ◽  
Two Dimensional ◽  
Collection Probability ◽  
Shading Effects

A Direct Method for Charge Collection Probability Computation Using the Reciprocity Theorem

2010 ◽  
Vol 57 (10) ◽  
pp. 2455-2461 ◽  
Author(s):  
Oka Kurniawan ◽  
Chee Chin Tan ◽  
Vincent K S Ong ◽  
Erping Li ◽  
Colin J Humphreys
Keyword(s):  
Direct Method ◽  
Reciprocity Theorem ◽  
Charge Collection ◽  
Collection Probability ◽  
A Direct Method

Shading effects in back-junction back-contacted silicon solar cells

2008 ◽  
Author(s):  
Martin Hermle ◽  
Filip Granek ◽  
Oliver Schultz-Wittmann ◽  
Stefan W. Glunz
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Shading Effects

scholarly journals Investigation of the Spatially Dependent Charge Collection Probability in CuInS2/ZnO Colloidal Nanocrystal Solar Cells

ACS Photonics ◽  
2015 ◽  
Vol 2 (7) ◽  
pp. 864-875 ◽  
Author(s):  
Dorothea Scheunemann ◽  
Sebastian Wilken ◽  
Jürgen Parisi ◽  
Holger Borchert
Keyword(s):  
Solar Cells ◽  
Charge Collection ◽  
Collection Probability

scholarly journals n-i-p Nanocrystalline Hydrogenated Silicon Solar Cells with RF-Magnetron Sputtered Absorbers

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1699
Author(s):  
Dipendra Adhikari ◽  
Maxwell M. Junda ◽  
Corey R. Grice ◽  
Sylvain X. Marsillac ◽  
Robert W. Collins ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor ◽  
Soda Lime ◽  
Device Fabrication ◽  
Silicon Solar Cells ◽  
Soda Lime Glass ◽  
Hydrogenated Silicon ◽  
Glass Substrates ◽  
Collection Probability

Nanocrystalline hydrogenated silicon (nc-Si:H) substrate configuration n-i-p solar cells have been fabricated on soda lime glass substrates with active absorber layers prepared by plasma enhanced chemical vapor deposition (PECVD) and radio frequency magnetron sputtering. The cells with nanocrystalline PECVD absorbers and an untextured back reflector serve as a baseline for comparison and have power conversion efficiency near 6%. By comparison, cells with sputtered absorbers achieved efficiencies of about 1%. Simulations of external quantum efficiency (EQE) are compared to experimental EQE to determine a carrier collection probability gradient with depth for the device with the sputtered i-layer absorber. This incomplete collection of carriers generated in the absorber is most pronounced in material near the n/i interface and is attributed to breaking vacuum between deposition of layers for the sputtered absorbers, possible low electronic quality of the nc-Si:H sputtered absorber, and damage at the n/i interface by over-deposition of the sputtered i-layer during device fabrication.

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