Titanium disilicide formation by interdiffusion of titanium/amorphous silicon multilayers: Influence of the bilayer silicon to titanium thickness ratio on the film properties

1992 ◽  
Vol 72 (10) ◽  
pp. 4660-4668 ◽  
Author(s):  
A. G. Nassiopoulos ◽  
D. Tambouris ◽  
A. Travlos ◽  
A. Traverse ◽  
P. Aloupogiannis
Keyword(s):  
Amorphous Silicon ◽  
Thickness Ratio ◽  
Film Properties ◽  
Titanium Disilicide

Correlation between film and cell properties for DC plasma deposited amorphous silicon

2001 ◽  
Vol 664 ◽  
Author(s):  
Jennifer Heath ◽  
Suman B. Iyer ◽  
Yoram Lubianiker ◽  
J. David Cohen ◽  
Gautam Ganguly
Keyword(s):  
Growth Rate ◽  
Amorphous Silicon ◽  
Defect Density ◽  
Silicon Film ◽  
Device Performance ◽  
Solar Cell Device ◽  
Film Properties ◽  
Dc Plasma ◽  
Hydrogen Dilution ◽  
Photocurrent Spectroscopy

ABSTRACTWe have carried out measurements to try to correlate amorphous silicon film properties with companion solar cell device performance. The dc plasma deposited intrinsic films were prepared with various hydrogen dilution levels, and increasing power levels to increase growth rate. The electronic properties were determined using admittance spectroscopy and drive-level capacitance profiling (DLCP) techniques as well as transient photocapacitance and photocurrent spectroscopy. Cell and film performance were explored in both as-grown and light-soaked states. We observed that, although cell performance decreased systematiclly with increasing growth rate, it depended on factors other than the deep defect density in the matched films. On the other hand, we did observe that increases in defect density caused by the light-induced degradation led to fairly predictable decreases in the cell fill factors.

Silicon nanocrystals on amorphous silicon carbide alloy thin films: Control of film properties and nanocrystals growth

2012 ◽  
Vol 522 ◽  
pp. 136-144 ◽  
Author(s):  
Jérémy Barbé ◽  
Ling Xie ◽  
Klaus Leifer ◽  
Pascal Faucherand ◽  
Christine Morin ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Silicon Nanocrystals ◽  
Film Properties ◽  
Amorphous Silicon Carbide ◽  
Carbide Alloy

Properties of amorphous silicon-germanium films and devices deposited at higher growth rates

2002 ◽  
Vol 715 ◽  
Author(s):  
Yong Liu ◽  
Vikram L. Dalal
Keyword(s):  
Amorphous Silicon ◽  
Growth Rates ◽  
Silicon Germanium ◽  
Urbach Energy ◽  
Dark Conductivity ◽  
Film Properties ◽  
Ecr Plasma ◽  
Device Properties ◽  
Amorphous Silicon Germanium ◽  
Defect Densities

AbstractWe report on the growth and properties of amorphous Silicon-Germanium [a–(Si,Ge):H] films and devices fabricated at growth rates of ∼ 5 Å/sec using a remote ECR plasma growth process. The films and devices were made using mixtures of germane and silane along with dilution with hydrogen and helium. The addition of He to the gas mixture significantly increased the growth rates. It was found that hydrogen was always necessary in order to achieve the best film and device properties. Films and devices were made across the entire bandgap range, from a-Si to a-Ge. High ratios of photo/dark conductivity and low values of Urbach energy ( > 50 meV) indicate good film properties. The defect densities were measured using space charge limited current techniques. The defect densities were in the range of 1-2 x 10 16/cm 3 –eV, about 5 times higher than for a-Si:H. Electron mobility-lifetime products were measured and found to be in the range of 2-4 x 10-7 cm2/V, even for low gap materials (1.35 eV). Single and graded gap devices were fabricated in these materials. Device fill factors of ∼ 70% were obtained in graded gap devices.

Light-Induced Degradation of Amorphous Silicon-Germanium Alloy Solar Cells Deposited at High Rates

1996 ◽  
Vol 420 ◽  
Author(s):  
S. Sugiyama ◽  
X. Xu ◽  
J. Yang ◽  
S. Guha
Keyword(s):  
Solar Cells ◽  
Glow Discharge ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Ion Bombardment ◽  
Ir Absorption ◽  
Film Properties ◽  
Deposition Rates ◽  
Rf Glow Discharge ◽  
Amorphous Silicon Germanium

AbstractWe have studied the light-induced degradation of amorphous silicon-germanium (a-SiGe:H) alloy single-junction solar cells with high initial performance deposited at high rates. The intrinsic layers were deposited using microwave (MW) glow-discharge technique at deposition rates between 10 and 40 Å/s. The results show that light-induced degradation of the cells is higher than that of cells deposited at low rates using RF glow-discharge technique, and it does not strongly depend on deposition rates over this range. The total hydrogen content and the ratio of Si-H2, Ge-H, and Ge-H2 to Si-H bonding estimated by infrared (IR) absorption in films are correlated with the cell degradation results. We have also investigated the effect of ionbombardment on film properties. Films with low ion-bombardment are more porous and have higher composition of Si-H2 and Ge-H2 bonding. Appropriate ion-bombardment makes denser structure in a-SiGe:H alloy films deposited at high rates. This improves the cell performance as well.

Influence of Plasma Excitation Frequency on Deposition Rate and on Film Properties for Hydrogenated Amorphous Silicon

1987 ◽  
Vol 95 ◽  
Author(s):  
H. Curtins ◽  
N. Wyrsch ◽  
M. Favre ◽  
K. Prasad ◽  
M. Brechet ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Low Cost ◽  
Excitation Frequency ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Film Properties ◽  
Rf Glow Discharge ◽  
Plasma Excitation ◽  
Hydrogenated Amorphous

AbstractThe preparation of hydrogenated amorphous silicon by the radio-frequency (RF) glow discharge technique is shown to be strongly dependent on the plasma excitation frequency. We have investigated the influence of this parameter on the deposition rate, on the hydrogen content and on the opto-electronic properties of the amorphous silicon films, over the range 25 to 150 MHz. A large variation of the deposition rate is observed, while most of the material properties remain practically unchanged. The results should be of considerable interest for mass production of low-cost amorphous silicon thin film devices.

scholarly journals Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure

2015 ◽  
Vol 106 (4) ◽  
pp. 041607 ◽  
Author(s):  
Yimao Wan ◽  
Keith R. McIntosh ◽  
Andrew F. Thomson ◽  
Andres Cuevas
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Plasma Exposure ◽  
Film Properties ◽  
Ammonia Plasma

Analysis of junction and film properties in high efficiency amorphous silicon solar cells

Solar Cells ◽  
1984 ◽  
Vol 11 (2) ◽  
pp. 97-104 ◽  
Author(s):  
S. Nonomura ◽  
H. Okamoto ◽  
K. Fukumoto ◽  
Y. Kashima ◽  
Y. Hamakawa
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Silicon Solar Cells ◽  
Film Properties

Titanium disilicide formation by rf plasma enhanced chemical vapor deposition and film properties

2003 ◽  
Vol 206 (1-4) ◽  
pp. 159-166 ◽  
Author(s):  
Osama A. Fouad ◽  
Masaaki Yamazato ◽  
Hiromichi Ichinose ◽  
Masamitsu Nagano
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Film Properties ◽  
Titanium Disilicide
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