Atmospheric pressure chemical vapor deposition of gallium doped zinc oxide thin films from diethyl zinc, water, and triethyl gallium

1992 ◽  
Vol 72 (11) ◽  
pp. 5381-5392 ◽  
Author(s):  
Jianhua Hu ◽  
Roy G. Gordon
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Oxide Thin Films ◽  
Diethyl Zinc ◽  
Pressure Chemical

Deposition of Fluorine Doped Tungsten Oxide Thin Films by Atmospheric Pressure Chemical Vapor Deposition

1992 ◽  
Vol 283 ◽  
Author(s):  
James W. Proscia ◽  
Charles H. Winter ◽  
Gene P. Reck ◽  
Gang Gang Wen
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Oxide ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Oxide Thin Films ◽  
Atom Concentration ◽  
Pressure Chemical ◽  
Tungsten Oxide Thin Films

ABSTRACTPolycrystalline fluorine doped tungsten oxide thin films were deposited onto glass substrates by reacting tungsten hexafluoride, difluoroethane, and isopropanol. The reaction was performed in an atmospheric pressure chemical vapor deposition reactor at a temperature of approximately 400 °C. The electrical conductivity and spectral properties were suggestive of n-type substitutional doping in which oxygen is partially replaced by fluorine. Temperature dependent resistivity measurements were consistent with the presence of polarons. The films were blue in color with enhanced reflectance and absorbance in the IR. These optical characteristics are potentially useful in improving the solar control properties of glass. Scanning electron microscopy revealed a faceted surface morphology. The fluorine atom concentration decreased when the films were annealed in air.

Sign in / Sign up

Export Citation Format

Share Document