Effects of Growth Conditions on the Low Temperature Photoluminescence Spectra of (111) 3C-SiC Layers Grown by Chemical Vapor Deposition on 3C-SiC Seeds grown by the Vapor-Liquid-Solid Technique

2010 ◽  
Author(s):  
G. Zoulis ◽  
J. W. Sun ◽  
N. Jegenyes ◽  
J. C. Lorenzzi ◽  
S. Juillaguet ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Photoluminescence Spectra ◽  
Vapor Liquid Solid ◽  
Low Temperature Photoluminescence ◽  
Vapor Liquid

(Invited) Low-Temperature Growth of Ge Nanowires by Vapor-Liquid-Solid Chemical Vapor Deposition

2012 ◽  
Vol 45 (3) ◽  
pp. 17-29 ◽  
Author(s):  
M. Simanullang ◽  
A. Seyhan ◽  
K. Usami ◽  
T. Kodera ◽  
Y. Kawano ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Liquid Solid ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Vapor Liquid

Vapor-liquid-solid Growth of III-Nitride Nanowires and Heterostructures by Metal-Organic Chemical Vapor Deposition

2004 ◽  
Vol 831 ◽  
Author(s):  
J. Su ◽  
M. Gherasimova ◽  
G. Cui ◽  
J. Han ◽  
S. Lim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Mesoporous Molecular Sieves ◽  
Organic Chemical ◽  
Vapor Liquid Solid ◽  
Metal Organic ◽  
Vls Growth ◽  
Organic Chemical Vapor Deposition ◽  
Vapor Liquid

ABSTRACTWe report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E2 phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process.

Vapor-liquid-solid growth of 4H-SiC single crystal films with extremely low carrier densities in chemical vapor deposition with Pt-Si alloy flux and X-ray topography analysis of its dislocation propagation behaviors

CrystEngComm ◽  
2021 ◽  
Author(s):  
Naoki Sannodo ◽  
Tomohisa Kato ◽  
Yoshiyuki Yonezawa ◽  
Kazutoshi Kojima ◽  
Y. Matsumoto
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Liquid Solid ◽  
Homoepitaxial Growth ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Pt Alloy ◽  
Sic Films ◽  
Vapor Liquid

A vapor-liquid-solid (VLS) mechanism has been successfully applied to homoepitaxial growth of 4H-SiC films in chemical vapor deposition (CVD), the key to which is the use of a Si-Pt alloy...

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