scholarly journals Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry

2010 ◽  
Vol 97 (19) ◽  
pp. 192110 ◽  
Author(s):  
L. A. Tracy ◽  
E. P. Nordberg ◽  
R. W. Young ◽  
C. Borrás Pinilla ◽  
H. L. Stalford ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Metal Oxide ◽  
Semiconductor Device ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Double Quantum ◽  
Enhancement Mode ◽  
Double Quantum Dot ◽  
Tunable Coupling ◽  
Lateral Geometry

Charge Sensed Pauli Blockade in a Metal–Oxide–Semiconductor Lateral Double Quantum Dot

Nano Letters ◽  
2013 ◽  
Vol 13 (12) ◽  
pp. 5785-5790 ◽  
Author(s):  
Khoi T. Nguyen ◽  
Michael P. Lilly ◽  
Erik Nielsen ◽  
Nathan Bishop ◽  
Rajib Rahman ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Double Quantum ◽  
Double Quantum Dot

scholarly journals Enhancement-mode double-top-gated metal-oxide-semiconductor nanostructures with tunable lateral geometry

2009 ◽  
Vol 80 (11) ◽  
Author(s):  
E. P. Nordberg ◽  
G. A. Ten Eyck ◽  
H. L. Stalford ◽  
R. P. Muller ◽  
R. W. Young ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Nanostructures ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Enhancement Mode ◽  
Lateral Geometry

Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications

2006 ◽  
Vol 88 (15) ◽  
pp. 152101 ◽  
Author(s):  
D. Q. Kelly ◽  
I. Wiedmann ◽  
J. P. Donnelly ◽  
S. V. Joshi ◽  
S. Dey ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Device ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Device Applications

scholarly journals Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal–oxide–semiconductor device

2004 ◽  
Vol 85 (16) ◽  
pp. 3387-3389 ◽  
Author(s):  
J. M. Sun ◽  
W. Skorupa ◽  
T. Dekorsy ◽  
M. Helm ◽  
L. Rebohle ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Device ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Influence of Dry Recess Process on Enhancement-Mode GaN Metal–Oxide–Semiconductor Field-Effect Transistors

2013 ◽  
Vol 52 (1S) ◽  
pp. 01AG02 ◽  
Author(s):  
Qingpeng Wang ◽  
Kentaro Tamai ◽  
Takahiro Miyashita ◽  
Shin-ichi Motoyama ◽  
Dejun Wang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Enhancement Mode
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