Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors

2010 ◽  
Vol 97 (19) ◽  
pp. 193511 ◽  
Author(s):  
L. Lin ◽  
H. L. Zhen ◽  
N. Li ◽  
W. Lu ◽  
Q. C. Weng ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Sequential Coupling

Suppression of dark current through barrier engineer for solution-processed colloidal quantum-dots infrared photodetectors

2015 ◽  
Vol 107 (9) ◽  
pp. 091115 ◽  
Author(s):  
Zhenyu Jiang ◽  
Wenjia Hu ◽  
Yan Liu ◽  
Wenjun Zhang ◽  
Chen Mo ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Dark Current ◽  
Colloidal Quantum Dots ◽  
Infrared Photodetectors ◽  
Solution Processed

ENGINEERING THE BARRIER OF QUANTUM DOTS-IN-A-WELL (DWELL) INFRARED PHOTODETECTORS FOR HIGH TEMPERATURE OPERATION

2011 ◽  
Vol 20 (03) ◽  
pp. 549-555 ◽  
Author(s):  
A. V. BARVE ◽  
Y. D. SHARMA ◽  
J. MONTOYA ◽  
J. SHAO ◽  
T. VANDERVELDE ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited State ◽  
Dark Current ◽  
Resonant Tunneling ◽  
Operating Temperature ◽  
Signal To Noise Ratio ◽  
Infrared Detection ◽  
Infrared Photodetectors ◽  
Signal To Noise ◽  
High Temperature Operation

Reduction in the dark current and improvement in signal to noise ratio in the quantum dots in a well infrared photodetectors using resonant tunneling barriers have been demonstrated. Ultra-low dark current levels and high detectivity of 3×1010 cm.Hz1/2/W at 77K for f/2 optics has been obtained for longwave infrared detection. In another experiment, the ability to control the excited state in the DWELL has been demonstrated by systematically varying the quantum well thickness. These detectors demonstrate high operating temperature with high detectivity values, even for high operating temperatures.

High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al0.2Ga0.8As Blocking Layers

2001 ◽  
Vol 692 ◽  
Author(s):  
Zhengmao Ye ◽  
Joe C. Campbell ◽  
Zhonghui Chen ◽  
O. Baklenov ◽  
E. T. Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Dark Current ◽  
High Performance ◽  
Infrared Photodetectors ◽  
Infrared Photodetector ◽  
Inas Quantum Dots ◽  
Quantum Dot Infrared Photodetectors

AbstractInAs/AlGaAs quantum dot infrared photodetectors based on bound-to-bound intraband transitions in undoped InAs quantum dots are reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 μm. At 77 K and –0.7 V bias the responsivity was 14 mA/W and the detectivtiy, D*, was 1010 cmHz1/2/W.

Enhanced Normal-Incident Absorption of Quantum-Dot Infrared Photodetectors With Smaller Quantum Dots

2008 ◽  
Vol 20 (14) ◽  
pp. 1240-1242 ◽  
Author(s):  
Chi-Che Tseng ◽  
Shu-Ting Chou ◽  
Yi-Hao Chen ◽  
Cheng-Nan Chen ◽  
Wei-Hsun Lin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors

High-performance near-infrared photodetectors based on C3N quantum dots integrated with single-crystal graphene

2021 ◽  
Author(s):  
Yun Zhao ◽  
Xiaoqiang Feng ◽  
Menghan Zhao ◽  
Xiaohu Zheng ◽  
Zhiduo Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Single Crystal ◽  
High Performance ◽  
Near Infrared ◽  
Fast Response ◽  
Local Electric Field ◽  
Infrared Photodetectors ◽  
Photocurrent Response

Employing C3N QD-integrated single-crystal graphene, photodetectors exhibited a distinct photocurrent response at 1550 nm. The photocurrent map revealed that the fast response derive from C3N QDs that enhanced the local electric field near graphene.

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