Minority carrier lifetime degradation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition

2000 ◽  
Vol 77 (2) ◽  
pp. 271-273 ◽  
Author(s):  
Q. Yang ◽  
D. S. Scott ◽  
T. Chung ◽  
G. E. Stillman
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