Diffusion barrier properties of TiN films for submicron silicon bipolar technologies

1992 ◽  
Vol 72 (7) ◽  
pp. 2743-2748 ◽  
Author(s):  
E. Kobeda ◽  
J. D. Warnock ◽  
J. P. Gambino ◽  
S. B. Brodsky ◽  
B. Cunningham ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Tin Films

Diffusion Barrier Properties of the Tin Films Prepared by Ecr Pecvd Method

1998 ◽  
Vol 514 ◽  
Author(s):  
Hye-Lyun Park ◽  
Seong-Soo Jang ◽  
Won-Jong Lee
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Device Structure ◽  
Film Properties ◽  
Tin Films ◽  
Cu Metallization ◽  
Tin Film ◽  
Diffusion Barrier Layer ◽  
Via Holes ◽  
Metallization Process

ABSTRACTTiN film is used as a diffusion barrier layer in contact and via holes in the metallization process of the microelectronics. In most cases, TiN film has been prepared by sputtering which has limited conformality. With the shrinkage of the dimension of the device structure there has been an urgent request for new deposition methods which offer better conformality. Recently, modified PVD systems like highly ionized sputtering system and CVD systems like MOCVD and PECVD systems have been developed.We prepared TiN films with TIC4, N2, and H2 in an ECR PECVD system. TiN films prepared at the temperature of 450°C had resistiveity lower than 50 μm Ω cm and better step coverage than those prepared by PVD system. Barrier properties of the TiN films against Cu were investigated and related with the film properties like composition and microstructure.The Cu/TiN/Si structure were annealed in an H2/Ar atmosphere for 30 min at the temperature range from 500 to 600°C.Plasma treatment and thermal treatment during and/or after the deposition in various atmosphere were adopted to change the composition and the microstructure of the TiN films.The composition of the film was analyzed with AES, the microstructure of the film was observed with SEM and the crystallinity was analyzed with XRD. The electrical resistivity was measured with four-point probe method. Barrier properties of the films were studied again Cu metallization. The change in the resistivity and the structure of the Cu/TiN/Si were investigated after the heat-treatment.

Chemical Vapor Deposition of TiN for Sub-0.5 μm ULSI Circuits

MRS Bulletin ◽  
1995 ◽  
Vol 20 (11) ◽  
pp. 38-41 ◽  
Author(s):  
M. Eizenberg
Keyword(s):  
Diffusion Barrier ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Low Cost ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Antireflection Coating ◽  
Barrier Material ◽  
Tin Films ◽  
Aspect Ratios

Titanium nitride (TiN) has been recognized as an excellent barrier material in various metallization structures of advanced microelectronic devices. TiN serves as a nucleation/glue layer as well as a barrier against WF6 attack in W plug filling. It serves as a diffusion barrier during or after high-temperature Al reflow processing for contact and via filling. TiN is considered as a diffusion-barrier material for Cu metallization as well. In addition, it is utilized as an antireflection coating layer, especially on top of Al, an application that will not be discussed in this article.TiN films must conform to the extreme topographies used in devices in order to guarantee void-free plug formation as well as Jow junction leakage. This should be achieved with the thinnest films possible in order to reduce interconnect stack thickness and to lower contact or via resistance. (The TiN resistivity is higher than that of the other components of the metallization—Ti, Al, or W.) In addition, the good barrier properties must be retained following various thermal cycles used in multilevel metallization. Finally, the metallization must be manufacturing-worthy, namely, it should be reliable and reproducible, it should have a very low particle content, and it should have a low cost of ownership.At present, TiN is mainly deposited by physical vapor deposition (PVD) via reactive sputtering. However, the poor conformality of sputtered TiN films over extreme topography limits the use of this deposition technique for deep sub-0.5 μm applications, especially those with features that have high aspect ratios.

A Comparative Study on the Titanium Nitride (TiN) as a Diffusion Barrier Between Al/Si and Cu/Si: Failure Mechanism and Effect of “Stuffing”

1995 ◽  
Vol 391 ◽  
Author(s):  
Ki-Chul Park ◽  
Ki-Bum Kim
Keyword(s):  
Comparative Study ◽  
Titanium Nitride ◽  
Failure Mechanism ◽  
Diffusion Barrier ◽  
Barrier Properties ◽  
Diffusion Barriers ◽  
Barrier Property ◽  
Si Substrate ◽  
Tin Films

AbstractThe diffusion barrier properties of 100-nm-thick TiN films, both as-deposited and "stuffed", were investigated in both Al/TiN/Si and Cu/TiN/Si metallization systems. In Al/TiN/Si systems, the TiN barrier fails by the formation of both Al spikes and Si pits in the Si substrate. However, in Cu/TiN/Si systems, the failure of TiN diffusion barriers occurs by the predominant diffusion of Cu into the Si substrate, which forms dislocations along the projection of Si {111} plane and precipitates (presumably Cu-silicides) around the dislocation. In Al/TiN/Si systems, it is shown that the diffusion barrier property of TiN is significantly enhanced by "stuffing" in N2 ambient prior to Al deposition. However, in Cu/TiN/Si systems, it is found that the "stuffing" of TiN does not improve the diffusion barrier property as it does in Al/TiN/Si systems.

Dependence of diffusion barrier properties in microstructure of reactively sputtered TiN films in Al alloy/TiN/Ti/Si system

1997 ◽  
Vol 117-118 ◽  
pp. 308-311 ◽  
Author(s):  
S. Sobue ◽  
T. Yamauchi ◽  
H. Suzuki ◽  
S. Mukainakano ◽  
O. Takenaka ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Al Alloy ◽  
Tin Films

Adhesion and Cu Diffusion Barrier Properties of a MnOx Barrier Layer Formed with Thermal MOCVD

2009 ◽  
Vol 1156 ◽  
Author(s):  
Koji Neishi ◽  
Vijay Kumar Dixit ◽  
S. Aki ◽  
Junichi Koike ◽  
K. Matsumoto ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Diffusion Barrier ◽  
Valence State ◽  
Dielectric Layer ◽  
Barrier Properties ◽  
Barrier Property ◽  
Adhesion Property ◽  
Composition Analysis ◽  
Good Adhesion ◽  
Deposition Chamber

AbstractA thin-amorphous MnOx layer using self-forming barrier process with a Cu-Mn alloy shows good adhesion and diffusion barrier properties between copper and dielectric layer, resulting in excellent reliability for stress and electromigration. Meanwhile, chemical vapor deposition (CVD) can be employed for conformal deposition of the barrier layer in narrow trenches and vias for future technology node. In our previous research, a thin and uniform amorphous MnOx layer could be formed on TEOS-oxide by thermal metal-organic CVD (MOCVD), showing a good diffusion barrier property. In addition, a good adhesion strength is necessary between a Cu line and a dielectric layer not only to ensure good SM and EM resistance but also to prevent film delamination under mechanical or thermal stress conditions during fabrication process such as chemical mechanical polishing or high temperature annealing. To date, no information is available with regard to the adhesion property of CVD-MnOx. In this work, we report diffusion barrier property in further detail and adhesion property in PVD-Cu/CVD-MnOx/SiO2/Si. The temperature dependence of the adhesion property is correlated with the chemical composition and valence state of Mn investigated with SIMS and Raman spectroscopy.Substrates were p-type Si wafers having a plasma-TEOS oxide of 100nm in thickness. CVD was carried out in a deposition chamber. A manganese precursor was vaporized and introduced into the deposition chamber with H2 carrier gas. After the CVD, a Cu overlayer was deposited on some samples using a sputtering system in load lock chamber of the CVD machine. The diffusion barrier property of the MnOx film was investigated in annealed samples at 400 oC for 100 hours in a vacuum of better than 1.0×10-5 Pa. The Adhesion property of Mn oxide was investigated by Scotch tape test in the as-deposited and in the annealed Cu/CVD-MnOx/TEOS samples. The obtained samples were analyzed for thickness and microstructure with TEM, chemical bonding states of the MnOx layer with XPS, and composition of each layer with SIMS.In the CVD deposition below 300 °C, no Cu delamination was observed both in the as-deposited and in the annealed Cu/CVD-MnOx/SiO2 samples. On the other hand, in the CVD deposition at 400 °C, the Cu films were delaminated from the CVD-MnOx/TEOS substrates. The XPS peak position of Mn 2p and Mn 3s spectra indicated that the valence state of Mn in the as-deposited barrier layer below 400 °C was 2+. Composition analysis with SIMS as well as Raman also indicated the presence of a larger amount of carbon at 400 °C than at less than 300 °C. The good adhesion between Cu and MnO could be attributed to an amount of carbon inclusion in the CVD barrier layer.

scholarly journals Diffusion barrier properties of molybdenum back contacts for Cu(In,Ga)Se2solar cells on stainless steel foils

2013 ◽  
Vol 113 (5) ◽  
pp. 054506 ◽  
Author(s):  
P. Blösch ◽  
F. Pianezzi ◽  
A. Chirilă ◽  
P. Rossbach ◽  
S. Nishiwaki ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Diffusion Barrier ◽  
Barrier Properties ◽  
Stainless Steel Foils ◽  
Steel Foils

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

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